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2N6118

Texas Instruments

2N6118 by Texas Instruments

The Texas Instruments 2N6118 is a Programmable UJT with max anode-cathode voltage of 40V. It has single configuration, round package shape, and wire terminal form. Ideal for applications requiring min valley current of 50uA, max peak current of 0.15uA, and anode case connection.

Median Price

$35.200

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 5,851 parts In-Stock

1+ parts

$35.200

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5,851

$35.200

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Vyrian

USA . 3,808 parts In-Stock

1+ parts

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3,808

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Digiode

USA . 936 parts In-Stock

1+ parts

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936

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ICP Electronique

France . 605 parts In-Stock

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605

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PUI

USA . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,897 parts In-Stock

1+ parts

$3.249

100+ parts

$301.755

1k+ parts

$2.924

10k+ parts

-

1,897

$3.249

$301.755

$2.924

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DigiPath Technology Company

USA . 1,291 parts In-Stock

1+ parts

$3.578

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1,291

$3.578

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ChromeModa Solutions

Germany . 6,047 parts In-Stock

1+ parts

$3.651

100+ parts

$2.994

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6,047

$3.651

$2.994

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IDEA Electronic Components Group

UK . 2,163 parts In-Stock

1+ parts

$3.651

100+ parts

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1k+ parts

$3.286

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2,163

$3.651

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$3.286

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AZTECH Wire

Italy . 568 parts In-Stock

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$17.944

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568

$17.944

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One Stop Electronics

USA . 164 parts In-Stock

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$21.100

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164

$21.100

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Corphita

USA . 1,046 parts In-Stock

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1,046

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Native Components

USA . 767 parts In-Stock

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767

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Northwest PG Solutions

USA . 643 parts In-Stock

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643

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Aztec Data Supply Inc.

USA . 600 parts In-Stock

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600

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Kepictronics

USA . 200 parts In-Stock

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200

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Overview

Unlock endless possibilities with the 2N6118 by Texas Instruments. Designed with precision and reliability in mind, this programmable unijunction transistor is a game-changer in the world of electronics. Whether you're working on circuit design or pulse generation, this product offers unparalleled value and performance. Trust in Texas Instruments to deliver top-notch quality and innovation, making the 2N6118 a must-have component for all your projects. Elevate your creations and experience the difference with the 2N6118.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides durability and protection, making it suitable for various applications where ruggedness is required.

Configuration: SINGLE

The single configuration simplifies the setup and integration of the programmable UJT into electronic circuits, making it easier to use.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in circular or cylindrical spaces, providing versatility in design options.

Maximum Anode To Cathode Voltage: 40 V

The maximum voltage rating of 40 V ensures reliable performance and protection against voltage spikes, enhancing the durability of the programmable UJT.

No. of Terminals: 3

The 3 terminals provide flexibility in connection options and circuit configurations, allowing for more versatile applications of the programmable UJT.

Trigger Device Type: PROGRAMMABLE UJT

Being a programmable UJT, this product offers adjustable triggering characteristics, making it suitable for a wide range of applications where precise control is required.

Minimum Valley Current: 50 uA

The low minimum valley current of 50 uA ensures efficient and reliable operation, especially in low-power applications where sensitivity is important.

Maximum Peak Current: 0.15 uA

The low maximum peak current of 0.15 uA helps in preventing excessive current flow and protects the programmable UJT from damage during operation.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6118 attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Texas Instruments

Specs

Maximum Anode To Cathode Voltage:

40 V

Case Connection:

Configuration:

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

.15 uA

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

50 uA

Trade Compliance

2N6118 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-019-3571, 5961010193571, 5961-99-116-9993, 5961991169993, 5961-99-653-5234, 5961996535234

NIIN

010193571, 991169993, 996535234

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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