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2N6028RLRPG

Onsemi

2N6028RLRPG by Onsemi

2N6028RLRPG by Onsemi is a Programmable UJT with max on-state current of 0.15A and anode-cathode voltage of 40V. It has a package style of cylindrical and operates b/w -50 to 125°C. Ideal for triggering circuits in applications requiring precise control like timing circuits and oscillators.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

USA . 7,470 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,000 parts In-Stock

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VNN

France . 1,792 parts In-Stock

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Digiode

USA . 1,790 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 780 parts In-Stock

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Nova Conductors

Japan . 68 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,248 parts In-Stock

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$4.891

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Ampacity Inc.

Singapore . 1,542 parts In-Stock

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$6.100

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AZTECH Wire

Italy . 386 parts In-Stock

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$11.218

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Component Stockers USA

USA . 471 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 8,225 parts In-Stock

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Lixinc

USA . 7,279 parts In-Stock

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Continental Prestige Electronics

USA . 3,358 parts In-Stock

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TANS Electronics

Latvia . 3,032 parts In-Stock

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Argo Parts USA

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Kulean Microsystems

USA . 2,523 parts In-Stock

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SupplyDigital Components

Austria . 1,839 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 955 parts In-Stock

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Corphita

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Corohmni

South Africa . 154 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unlock the power of innovation with the 2N6028RLRPG by Onsemi. As a leader in semiconductor manufacturing, Onsemi guarantees top-notch quality and reliability. The Programmable Unijunction Transistor (UJT) category offers unparalleled performance in a variety of applications. From triggering circuits to pulse generation, this product delivers exceptional value and benefits to customers seeking efficiency and precision. Trust Onsemi to provide the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum On-state Current: 0.15 A

Capable of handling a moderate current, making it suitable for a variety of applications.

Maximum Anode To Cathode Voltage: 40 V

Can withstand relatively high voltages, adding to the versatility of the product.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, making it reliable in different environments.

Minimum Operating Temperature: -50 °C

Can operate in low temperatures, making it suitable for a wide range of temperature conditions.

Minimum Valley Current: 25 uA

Provides precise triggering capabilities, allowing for accurate control in applications.

Maximum Power Dissipation: 0.3 W

Efficiently dissipates heat, preventing overheating and ensuring the product's reliability.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6028RLRPG attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

.15 uA

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

25 uA

Trade Compliance

2N6028RLRPG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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