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2N6028

Onsemi

2N6028 by Onsemi

2N6028 by Onsemi is a Programmable UJT with max on-state current of 0.15A and anode-cathode voltage of 40V. It has 3 terminals, operates b/w -50 to 100°C, and can handle peak current of 0.15uA. Ideal for triggering circuits in applications like timing, sensing, and thyristor firing.

Median Price

$1.550

Lifecycle Status

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1k+

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DigiKey

USA . 463 parts In-Stock

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Verical

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Digiode

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DigiKey Marketplace

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TEDSS.com

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Ace Electronics

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Corohmni

South Africa . 342 parts In-Stock

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Northwest PG Solutions

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Corphita

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Microchip USA

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Overview

Discover the efficiency and reliability of the 2N6028 Programmable Unijunction Transistor by Onsemi. Built with precision and quality in mind, this product offers unparalleled performance in various applications. From pulse generation to timing circuits, the 2N6028 provides superior functionality and value to customers seeking a high-quality component for their projects. Trust in Onsemi's reputation for excellence and choose the 2N6028 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the product lightweight and durable, ideal for various electronic applications.

Maximum On-state Current: 0.15 A

The high maximum on-state current allows for efficient conduction during operation, ensuring reliability and performance.

Maximum Anode To Cathode Voltage: 40 V

The high maximum anode to cathode voltage provides flexibility in voltage requirements, making the product suitable for a wide range of applications.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature ensures that the product can withstand challenging environmental conditions, increasing its longevity and reliability.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows the product to function effectively even in cold environments, offering versatility in usage.

Maximum Power Dissipation: 0.3 W

The high maximum power dissipation capability ensures that the product can handle power efficiently, making it suitable for demanding applications.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6028 attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

.15 uA

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Minimum Valley Current:

25 uA

Trade Compliance

2N6028 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-213-6330, 5961002136330, 5961-00-252-1322, 5961002521322, 5961-14-346-9296, 5961143469296

NIIN

002136330, 002521322, 143469296

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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