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2N6028RLRA

Onsemi

2N6028RLRA by Onsemi

2N6028RLRA by Onsemi is a Programmable UJT with max on-state current of 0.15A and anode-cathode voltage of 40V. Ideal for applications requiring trigger devices, it operates b/w -50 to 100 °C with a power dissipation of 0.3W.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 1,645 parts In-Stock

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Digiode

USA . 595 parts In-Stock

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595

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Vyrian

USA . 524 parts In-Stock

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SupplyDigital Components

Austria . 7,957 parts In-Stock

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Kulean Microsystems

USA . 5,980 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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TANS Electronics

Latvia . 2,642 parts In-Stock

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Corphita

USA . 1,892 parts In-Stock

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Northwest PG Solutions

USA . 1,425 parts In-Stock

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$4.047

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Native Components

USA . 840 parts In-Stock

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$4.006

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UHIMA Technologies

Türkiye . 411 parts In-Stock

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Problanco Electronics

Mexico . 256 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Looking for a reliable and high-quality Programmable Unijunction Transistor (UJT)? Look no further than the 2N6028RLRA by Onsemi. With a reputable manufacturer like Onsemi, you can trust in the durability and performance of this product. Whether you need it for pulse generators, timing circuits, or relaxation oscillators, this UJT offers excellent value with its ease of use and versatility. Say goodbye to technical headaches and hello to seamless functionality with the 2N6028RLRA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum On-state Current: 0.15 A

Allows for efficient conduction of current, ensuring optimal performance of the programmable UJT.

Maximum Anode To Cathode Voltage: 40 V

Offers a suitable voltage range for various applications, increasing the versatility of the programmable UJT.

Maximum Operating Temperature: 100 °C

Can withstand high temperatures, making it suitable for use in a wide range of environments.

Minimum Operating Temperature: -50 °C

Capable of operating in low temperature conditions, further expanding its usability.

Maximum Power Dissipation: 0.3 W

Efficiently dissipates heat generated during operation, preventing overheating and potential damage to the product.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6028RLRA attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

.15 uA

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

25 uA

Trade Compliance

2N6028RLRA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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