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BF824W-TAPE-7

NXP Semiconductors

BF824W-TAPE-7 by NXP Semiconductors

BF824W-TAPE-7 by NXP Semiconductors is a PNP RF BJT designed for very high frequency applications. It features a max collector current of 25 mA, operates up to 150 °C, and has a transition frequency of 450 MHz. Ideal for compact surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,104 parts In-Stock

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Vyrian

USA . 1,031 parts In-Stock

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1,031

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Anansix

USA . 1,014 parts In-Stock

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1,014

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,694 parts In-Stock

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$3.576

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$3.576

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One Stop Electronics

USA . 1,477 parts In-Stock

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$54.050

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1,477

$54.050

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UNI Independent Distributors

Spain . 4,009 parts In-Stock

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Corphita

USA . 3,087 parts In-Stock

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Native Components

USA . 603 parts In-Stock

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$3.153

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Overview

Unlock unparalleled performance with the BF824W-TAPE-7 from NXP Semiconductors, a leader in innovative technology. This PNP RF small signal transistor delivers exceptional efficiency and reliability for high-frequency applications, making it ideal for RF amplifiers and signal processing. With its compact design and robust construction, you can count on superior thermal management and longevity, ensuring your projects operate seamlessly and effectively. Choose quality—choose NXP.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable plastic/epoxy material ensures robust performance and reliable protection against environmental factors.

Polarity or Channel Type: PNP

The PNP type configuration allows for easy integration in various circuits, enhancing flexibility in design.

Configuration: SINGLE

A single configuration simplifies the circuit design and saves space, making it suitable for compact applications.

Surface Mount: YES

Surface mount capability provides ease of assembly and allows for higher component density on printed circuit boards.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout and soldering for efficient use of PCB space.

Terminal Form: GULL WING

Gull wing terminals ensure better solder joint reliability and facilitate easy visual inspection after soldering.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency range makes this BJT suitable for RF applications such as amplifiers or oscillators.

No. of Terminals: 3

The three-terminal design provides the necessary connections for versatile circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes footprint, allowing for more compact device design and placement.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 indicates a decent level of amplification, useful in various signal processing tasks.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature enhances reliability and extends the application areas to high thermal environments.

Maximum Collector-Base Capacitance: 0.3 pF

Low collector-base capacitance ensures fast switching and high frequency performance, ideal for RF applications.

Maximum Collector-Emitter Voltage: 30 V

A maximum collector-emitter voltage of 30 V allows for broader application in various electronic circuits.

Transistor Element Material: SILICON

Silicon as the elemental material offers excellent thermal and electrical properties, ensuring reliable performance.

Maximum Collector Current (IC): 0.025 A

The maximum collector current of 25 mA is adequate for many small-signal applications, ensuring efficient operation.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in circuit design and simplifies layout design for various applications.

Nominal Transition Frequency (fT): 450 MHz

A nominal transition frequency of 450 MHz enables effective use in RF applications, ensuring superior signal fidelity.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF824W-TAPE-7 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.3 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF824W-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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