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BF824-TAPE-13

NXP Semiconductors

BF824-TAPE-13 by NXP Semiconductors

BF824-TAPE-13 by NXP Semiconductors is a PNP RF BJT designed for very high frequency applications. It features a max collector-emitter voltage of 30V, operates up to 150 °C, and has a nominal transition frequency of 440 MHz. Ideal for compact surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,708 parts In-Stock

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Anansix

USA . 1,282 parts In-Stock

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Vyrian

USA . 195 parts In-Stock

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Native Components

USA . 27 parts In-Stock

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$0.465

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$0.447

27

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Northwest PG Solutions

USA . 1,321 parts In-Stock

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$0.512

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$0.452

1,321

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$0.452

One Stop Electronics

USA . 670 parts In-Stock

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$26.050

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670

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Corphita

USA . 2,078 parts In-Stock

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UNI Independent Distributors

Spain . 469 parts In-Stock

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469

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Overview

Elevate your designs with the BF824-TAPE-13 from NXP Semiconductors, a trusted name in innovation. This PNP RF Small Signal BJT excels in high-frequency applications, offering unmatched reliability and performance. Its compact surface-mount design makes integration seamless, ensuring superior signal quality and efficiency for your projects. Choose NXP’s BF824-TAPE-13 and unlock a world of possibilities, delivering exceptional value and cutting-edge technology to elevate your solutions!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and resistance to moisture, making this transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration is advantageous for applications requiring sourcing current, providing versatility in circuit designs.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces PCB space, making it easier to integrate into existing designs.

Surface Mount: YES

Surface mount technology allows for compact design and automated assembly, leading to cost-effective manufacturing.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient space utilization on PCBs, which is crucial for modern electronic devices.

Terminal Form: GULL WING

Gull wing terminal form provides strong mechanical bonds and easier soldering, enhancing reliability in connections.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band makes this transistor suitable for high-speed applications like RF amplification.

No. of Terminals: 3

With only 3 terminals, this transistor maintains simplicity, reducing the complexity in design while still offering essential functionality.

Package Style (Meter): SMALL OUTLINE

Small outline package style allows for high packing density and is ideal for compact electronics where space is a premium.

Maximum Operating Temperature: 150 °C

A high operating temperature of 150 °C enables this transistor to perform reliably in demanding environments.

Maximum Collector-Emitter Voltage: 30 V

Supporting up to 30V allows for versatile usage in various applications, making it suitable for both low and moderate voltage circuits.

Transistor Element Material: SILICON

Silicon material ensures good thermal performance and high reliability, essential for electronic components under varying conditions.

Maximum Collector Current (IC): 0.025 A

A maximum collector current of 0.025 A indicates this transistor can handle moderate loads, suitable for many signal applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in layout and design alternatives on the printed circuit board.

Nominal Transition Frequency (fT): 440 MHz

With a transition frequency of 440 MHz, this transistor is capable of high-speed switching, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF824-TAPE-13 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF824-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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