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BF1100-TAPE-7

NXP Semiconductors

BF1100-TAPE-7 by NXP Semiconductors

BF1100-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 14V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. Ideal for compact surface mount designs, it ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,328 parts In-Stock

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Anansix

USA . 2,898 parts In-Stock

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2,898

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Vyrian

USA . 67 parts In-Stock

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67

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One Stop Electronics

USA . 1,324 parts In-Stock

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$64.050

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$64.050

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UNI Independent Distributors

Spain . 3,197 parts In-Stock

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Northwest PG Solutions

USA . 1,991 parts In-Stock

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Native Components

USA . 570 parts In-Stock

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570

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Corphita

USA . 450 parts In-Stock

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450

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Overview

Elevate your designs with the BF1100-TAPE-7 from NXP Semiconductors, a top-tier choice for RF applications. This high-quality N-channel FET delivers exceptional performance with built-in reliability, making it perfect for amplifiers in ultra-high frequency settings. Benefit from NXP's industry-leading innovation and commitment to excellence, ensuring that your projects achieve unmatched efficiency, durability, and precision. Transform your ideas into reality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the product reliable in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically provide higher efficiency and faster switching speeds, making them suitable for high-speed applications.

Configuration: SINGLE WITH BUILT-IN DIODE

A built-in diode offers additional protection and simplifies circuit designs, enhancing the overall versatility of the product.

Transistor Application: AMPLIFIER

Optimized for amplification, this product is ideal for audio and RF signal amplification, ensuring high performance in signal processing.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of PCB space, making it suitable for modern electronics.

Minimum DS Breakdown Voltage: 14 V

With a minimum breakdown voltage of 14 V, this transistor can operate safely in higher voltage applications without risk of failure.

Package Shape: RECTANGULAR

The rectangular shape provides efficient use of board space, enabling neat and organized circuitry in compact devices.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and alignment on the PCB, ensuring reliable electrical connections in assembly.

Operating Mode: DUAL GATE, ENHANCEMENT MODE

Dual gate enhancement mode allows for better control of the output signal, improving linearity and making it suitable for complex applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, this FET is perfect for modern communication devices requiring high-frequency operation.

No. of Terminals: 4

With four terminals, this FET allows for flexible circuit designs and multiple configuration options for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained designs, making it suitable for portable electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making it efficient for battery-operated devices.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability and performance in high-temperature environments.

Transistor Element Material: SILICON

Silicon is a well-established material for FETs, offering a good balance of performance, cost, and availability.

Maximum Drain Current (ID): 0.03 A

A maximum drain current of 0.03 A makes this FET suitable for low-power applications, enhancing energy efficiency.

Terminal Position: DUAL

Dual terminal positions allow for flexible layout options on PCBs, enhancing design versatility in various applications.

Case Connection: SOURCE

Source connection design simplifies integration into various circuits, making it easier to implement in specific configurations.

Maximum Feedback Capacitance (Crss): 0.035 pF

Low feedback capacitance ensures minimal signal distortion, which is crucial for high-frequency and precision signal applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF1100-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

14 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.035 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF1100-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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