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BCV61A-TAPE-7

NXP Semiconductors

BCV61A-TAPE-7 by NXP Semiconductors

BCV61A-TAPE-7 from NXP Semiconductors is an NPN small signal BJT ideal for current mirror applications. It features a max VCEsat of 0.6V, hFE of 110, and operates up to 150 °C. This surface-mount transistor is perfect for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,905 parts In-Stock

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3,905

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Digiode

USA . 352 parts In-Stock

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352

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Anansix

USA . 138 parts In-Stock

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138

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Distributors (Availability)

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Northwest PG Solutions

USA . 2,054 parts In-Stock

1+ parts

$3.214

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2,054

$3.214

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One Stop Electronics

USA . 1,614 parts In-Stock

1+ parts

$9.050

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1,614

$9.050

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UNI Independent Distributors

Spain . 7,303 parts In-Stock

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7,303

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Corphita

USA . 2,743 parts In-Stock

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2,743

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Native Components

USA . 169 parts In-Stock

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$2.835

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169

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$2.835

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Overview

Unlock the potential of your designs with the BCV61A-TAPE-7 from NXP Semiconductors, a leader in innovation and quality. This small signal Bipolar Junction Transistor offers superior performance for current mirror applications, ensuring reliable operation even at high temperatures. With its robust construction and efficient surface mount design, it enhances circuitry with precision and longevity, making it the ideal choice for discerning engineers aiming for excellence in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides protection against environmental factors and allows for lightweight designs.

Polarity or Channel Type: NPN

NPN transistors are versatile and commonly used in amplifying and switching applications, making them ideal for various electronic designs.

Configuration: CURRENT MIRROR

The current mirror configuration allows for precise current control, improving circuit performance and reliability in analog applications.

Surface Mount: YES

Surface mount technology facilitates automated PCB assembly, which enhances production efficiency and reduces manufacturing costs.

Maximum VCEsat: 0.6 V

A low saturation voltage allows for higher efficiency in switching applications, reducing power loss in the system.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, allowing for compact circuit designs.

Terminal Form: GULL WING

Gull wing leads provide excellent solderability and mechanical stability, ensuring reliable connections in surface-mounted applications.

No. of Terminals: 4

Four terminals make it suitable for versatile connectivity in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for increased density in circuit layouts, which is essential for modern, compact electronic devices.

Minimum DC Current Gain (hFE): 110

A minimum DC current gain of 110 ensures robust amplification capabilities, making it suitable for low-power applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability under extreme conditions, making it suitable for automotive and industrial applications.

Maximum Collector-Emitter Voltage: 30 V

A maximum collector-emitter voltage of 30 V allows for use in a range of applications, including power management and signal processing.

Transistor Element Material: SILICON

Silicon transistors are well-established for their performance, reliability, and cost-effectiveness in a wide range of applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A makes it suitable for low to medium power applications while maintaining efficiency.

Terminal Position: DUAL

Dual terminal positions enhance layout flexibility on the PCB, improving overall circuit design.

Case Connection: COLLECTOR

Collector case connection optimizes heat dissipation, enhancing the transistor's performance during operation.

Nominal Transition Frequency (fT): 300 MHz

A high transition frequency of 300 MHz allows for high-speed operation, making it ideal for RF and fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV61A-TAPE-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BCV61A-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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