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BCV61B,215

NXP Semiconductors

BCV61B,215 by NXP Semiconductors

BCV61B,215 by NXP Semiconductors is a NPN BJT with VCEsat of 0.6V and hFE of 110. It is used as a current mirror in applications requiring a max IC of 0.1A and operating temperature up to 150°C. The transistor has a package style of small outline, GULL WING terminals, and can handle a max VCE of 30V.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Mouser Electronics

USA . 37 parts In-Stock

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$0.600

100+ parts

$0.270

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$0.193

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$0.174

37

$0.600

$0.270

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$0.174

Newark

USA . 380 parts In-Stock

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$0.878

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$0.358

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$0.249

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$0.878

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Verical

USA . 129,000 parts In-Stock

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Arrow

USA . 15,000 parts In-Stock

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$0.055

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$0.055

EBV Elektronik

Germany . 6,000 parts In-Stock

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Chip1Stop

Japan . 6,000 parts In-Stock

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$0.135

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Farnell

UK . 3,265 parts In-Stock

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$0.220

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$0.181

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$0.177

3,265

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$0.220

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$0.177

Element14

Singapore . 3,265 parts In-Stock

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$0.226

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$0.186

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$0.182

3,265

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$0.186

$0.182

Distributors (In-Stock)

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Digiode

USA . 2,737 parts In-Stock

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$0.060

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Nova Conductors

Japan . 52 parts In-Stock

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Chip Stock

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NAC Semi

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IBS Electronics

USA . 9,000 parts In-Stock

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Vyrian

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A&K Electronics

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Rotakorn

Sweden . 6,000 parts In-Stock

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Bristol Electronics

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DigiKey Marketplace

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Anansix

USA . 1,143 parts In-Stock

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ComSIT Distribution GmbH

Germany . 914 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 685 parts In-Stock

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685

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VNN

France . 461 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 38,791 parts In-Stock

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$0.045

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$0.045

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Corphita

USA . 1,163 parts In-Stock

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AZTECH Wire

Italy . 3,930 parts In-Stock

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$0.110

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Aranea Global

USA . 1,000 parts In-Stock

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$0.129

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$0.124

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Argo Parts USA

USA . 4,473 parts In-Stock

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Corohmni

South Africa . 213 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,495 parts In-Stock

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$1.290

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Eastek

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GreenTree Electronics

Israel . 108,000 parts In-Stock

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Perfect Parts

USA . 13,440 parts In-Stock

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Continental Prestige Electronics

USA . 4,973 parts In-Stock

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UNI Independent Distributors

Spain . 3,721 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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Supply Digital

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Cyclops Electronics Ltd (Excess)

UK . 685 parts In-Stock

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685

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Overview

Unlock the power of precision with the BCV61B,215 by NXP Semiconductors. This Small Signal Bipolar Junction Transistor (BJT) boasts top-tier quality and reliability, making it the ideal choice for a wide range of applications. From current mirrors to signal amplification, this NPN transistor delivers exceptional performance with a low VCEsat of 0.6V and high DC current gain of 110hFE. Trust in NXP Semiconductors to provide cutting-edge technology that maximizes efficiency and enhances your projects. Experience the value and benefits of the BCV61B,215 - the perfect solution for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for various circuit designs.

Configuration: CURRENT MIRROR

Ideal for precision current mirroring applications where accuracy is crucial.

Surface Mount: YES

Easy to mount on PCBs, reducing assembly time and enabling compact circuit designs.

Maximum VCEsat: 0.6 V

Low VCEsat ensures minimal power loss in the saturated state, enhancing efficiency.

Package Shape: RECTANGULAR

Space-efficient design that can be easily integrated into tight layouts on PCBs.

Terminal Form: GULL WING

Suitable for automated assembly processes such as pick-and-place machines.

No. of Terminals: 4

Provides multiple connections for versatile circuit configurations.

Maximum Power Dissipation (Abs): 0.25 W

Capable of handling moderate power levels, suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space on the PCB, enabling denser circuit layouts.

Minimum DC Current Gain (hFE): 110

High current gain ensures amplification accuracy and stability in circuits.

Maximum Operating Temperature: 150 °C

Can withstand elevated temperatures, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 30 V

Allows for a wide range of voltage requirements in circuit designs.

Transistor Element Material: SILICON

High-quality silicon material ensures reliable performance and longevity of the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for various circuit applications.

Terminal Finish: TIN

Provides good electrical conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit integration and connection options.

Case Connection: COLLECTOR

Collector connection layout simplifies circuit design and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during assembly processes within a specific time frame.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for reliable soldering in diverse manufacturing environments.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV61B,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

FOR TRANSISTOR2 HFE IS 200

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BCV61B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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