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BCV62B,215

NXP Semiconductors

BCV62B,215 by NXP Semiconductors

BCV62B,215 by NXP Semiconductors is a PNP BJT with VCEsat of 0.65V and hFE of 220. It is a current mirror transistor with max IC of 0.1A, ideal for small outline applications requiring high transition frequency up to 100MHz at an operating temp of 150°C.

Median Price

$0.420

Lifecycle Status

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18

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Chip1Stop

Japan . 1,390 parts In-Stock

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$0.648

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Newark

USA . 14 parts In-Stock

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$1.550

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$0.751

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14

$1.550

$0.751

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Rochester

USA . 429,422 parts In-Stock

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$0.354

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$0.294

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$0.262

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$0.354

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$0.262

Verical

USA . 213,972 parts In-Stock

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DigiKey

USA . 94,278 parts In-Stock

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$0.440

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Avnet

USA . 45,000 parts In-Stock

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Arrow

USA . 9,000 parts In-Stock

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$0.097

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$0.097

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Digiode

USA . 1,850 parts In-Stock

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$0.115

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Nova Conductors

Japan . 500 parts In-Stock

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$0.121

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TME

Poland . 2,337 parts In-Stock

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$0.520

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$0.258

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IBS Electronics

USA . 333,000 parts In-Stock

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$0.750

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$0.750

NAC Semi

USA . 267,000 parts In-Stock

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Chip Stock

USA . 152,000 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 2,832 parts In-Stock

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VNN

France . 2,319 parts In-Stock

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Anansix

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Semtec, LLC

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Ampacity Inc.

Singapore . 180,220 parts In-Stock

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$0.046

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$0.046

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Corphita

USA . 1,280 parts In-Stock

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$0.109

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Component Stockers USA

USA . 527,838 parts In-Stock

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$0.120

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$0.110

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$0.100

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$0.110

527,838

$0.120

$0.110

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$0.110

Argo Parts USA

USA . 3,928 parts In-Stock

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$0.121

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$0.117

3,928

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Bastille Electronics

Australia . 2,267 parts In-Stock

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$0.115

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$0.109

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2,267

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$0.108

AZTECH Wire

Italy . 4,005 parts In-Stock

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Corohmni

South Africa . 302 parts In-Stock

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$0.651

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$1.458

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Continental Prestige Electronics

USA . 825,846 parts In-Stock

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Perfect Parts

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Eastek

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iodParts Technologies Inc.

India . 8,570 parts In-Stock

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Kepictronics

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Glotronic Ltd.

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S.R.D Solutions

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Authorized Procurement Solutions

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Supply Digital

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GreenTree Electronics

Israel . 1,568 parts In-Stock

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Overview

Discover the BCV62B,215 by NXP Semiconductors, a top-notch PNP small signal bipolar junction transistor perfect for current mirror configurations. With a maximum VCEsat of 0.65V and a minimum DC current gain of 220, this transistor offers exceptional performance and reliability. Ideal for various applications, this product provides customers with high-quality components that deliver optimal results. Upgrade your projects with the BCV62B,215 and experience the superior value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: PNP

Suitable for applications where a PNP BJT is required, offering flexibility in circuit design.

Configuration: CURRENT MIRROR

Ideal for current mirror circuits, enabling precise and stable current replication.

Surface Mount: YES

Easily mountable on circuit boards, simplifying the assembly process.

Maximum VCEsat: 0.65 V

Low VCEsat minimizes power loss and improves efficiency in the circuit.

Package Shape: RECTANGULAR

Space-efficient design for compact circuit layouts.

No. of Terminals: 4

Provides multiple connection points for versatile circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package for space-constrained applications.

Minimum DC Current Gain (hFE): 220

High DC current gain ensures amplification and signal fidelity in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 30 V

Sufficient voltage rating for various circuit requirements.

Transistor Element Material: SILICON

Silicon material offers reliable performance and stability in transistor operation.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate collector currents for typical applications.

Terminal Finish: TIN

Tin finish provides good electrical conductivity and solderability.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB mounting options.

Case Connection: COLLECTOR

Collector case connection for convenient circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper reflow soldering within specified time limits for reliable connections.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for lead-free soldering processes.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency for fast switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV62B,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

FOR TRANSISTOR2 HFE IS 220

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BCV62B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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