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BCV61C,215

NXP Semiconductors

BCV61C,215 by NXP Semiconductors

NXP Semiconductors' BCV61C,215 is a NPN BJT with VCEsat of 0.6V and hFE of 110. Ideal for current mirror configurations in small outline packages, it operates up to 150°C with a max IC of 0.1A.

Median Price

$0.354

Lifecycle Status

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1k+

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Chip1Stop

Japan . 2,375 parts In-Stock

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$0.918

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$0.918

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Rochester

USA . 341,071 parts In-Stock

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$0.354

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$0.294

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$0.262

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$0.354

$0.294

$0.262

DigiKey

USA . 341,071 parts In-Stock

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$0.440

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$0.440

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Verical

USA . 208,439 parts In-Stock

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$0.399

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$0.328

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$0.328

EBV Elektronik

Germany . 165,000 parts In-Stock

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Arrow

USA . 90,000 parts In-Stock

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Element14

Singapore . 3,837 parts In-Stock

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$0.275

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$0.185

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Farnell

UK . 1,603 parts In-Stock

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$0.232

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$0.150

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Digiode

USA . 3,749 parts In-Stock

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$0.115

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Nova Conductors

Japan . 50 parts In-Stock

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$0.148

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NAC Semi

USA . 750,000 parts In-Stock

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$0.100

DigiKey Marketplace

USA . 354,632 parts In-Stock

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Chip Stock

USA . 157,000 parts In-Stock

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IBS Electronics

USA . 15,000 parts In-Stock

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$0.108

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Vyrian

USA . 2,362 parts In-Stock

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2,362

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Anansix

USA . 1,748 parts In-Stock

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Sensible Micro Corp

USA . 1,677 parts In-Stock

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VNN

France . 1,351 parts In-Stock

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EPE Components Inc.

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Bristol Electronics

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Prism Electronics

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Ampacity Inc.

Singapore . 125,380 parts In-Stock

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$0.098

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Corphita

USA . 426 parts In-Stock

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Component Stockers USA

USA . 2,221 parts In-Stock

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$0.050

Netroflash

USA . 2,000 parts In-Stock

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$0.148

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$0.145

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Argo Parts USA

USA . 1,643 parts In-Stock

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AZTECH Wire

Italy . 7,138 parts In-Stock

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Corohmni

South Africa . 5 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,239 parts In-Stock

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Eastek

USA . 663,000 parts In-Stock

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Continental Prestige Electronics

USA . 354,632 parts In-Stock

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GreenTree Electronics

Israel . 81,000 parts In-Stock

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Kepictronics

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Futuretech Components

Singapore . 8,000 parts In-Stock

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UNI Independent Distributors

Spain . 5,872 parts In-Stock

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Perfect Parts

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Supply Digital

USA . 2,663 parts In-Stock

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Overview

Discover the BCV61C,215 by NXP Semiconductors, a top-quality NPN small signal bipolar junction transistor designed to meet your electronic needs. With a maximum VCEsat of 0.6V and a minimum DC current gain of 110, this transistor offers reliable performance in current mirror configurations. Whether you're working on amplifiers, oscillators, or other applications, the BCV61C,215 provides excellent power dissipation at 0.25W and operates at temperatures up to 150°C. Trust in NXP Semiconductors' expertise and choose the BCV61C,215 for superior functionality and value in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for different circuit designs.

Configuration: CURRENT MIRROR

Current mirrors are essential components in many analog circuits, providing stable output current regardless of load variations.

Surface Mount: YES

Surface mount technology allows for easy and quick assembly on PCBs, saving space and increasing efficiency in production.

Maximum VCEsat: 0.6 V

Low VCEsat reduces power dissipation and improves efficiency in circuit operation.

Maximum Power Dissipation (Abs): 0.25 W

With a high maximum power dissipation, this transistor can handle substantial loads without overheating.

Maximum Collector-Emitter Voltage: 30 V

The high maximum voltage rating allows for use in a wide range of circuit applications.

Nominal Transition Frequency (fT): 100 MHz

A high transition frequency means the transistor can operate at high frequencies, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV61C,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

FOR TRANSISTOR2 HFE IS 420

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BCV61C,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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