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BCV62C,215

NXP Semiconductors

BCV62C,215 by NXP Semiconductors

BCV62C,215 by NXP Semiconductors is a PNP BJT with VCEsat of 0.65V and hFE of 420. It operates at max 150°C, handles IC up to 0.1A, and has fT of 100MHz. Ideal for current mirror configurations in small outline packages for various electronic applications.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

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Future Electronics

Canada . 774,000 parts In-Stock

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Verical

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Chip1Stop

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Arrow

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EBV Elektronik

Germany . 3,000 parts In-Stock

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Rochester

USA . 2,795 parts In-Stock

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RS (Exports)

UK . 1,150 parts In-Stock

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Farnell

UK . 853 parts In-Stock

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Element14

Singapore . 1 parts In-Stock

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Digiode

USA . 3,733 parts In-Stock

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Nova Conductors

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IBS Electronics

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NAC Semi

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K-1 Technologies

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LIBRA Elektronik GmbH

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Speed Components Ltd

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Semicontronic

India . 177,839 parts In-Stock

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Ampacity Inc.

Singapore . 177,596 parts In-Stock

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Corphita

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Component Stockers USA

USA . 238,553 parts In-Stock

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Argo Parts USA

USA . 2,054 parts In-Stock

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AZTECH Wire

Italy . 2,425 parts In-Stock

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Modulus Dynamics

Lithuania . 13,314 parts In-Stock

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$0.879

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Corohmni

South Africa . 53 parts In-Stock

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Aztec Data Supply Inc.

USA . 19,856 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 792,000 parts In-Stock

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Perfect Parts

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Eastek

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Lucentia Tech

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Lixinc

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Authorized Procurement Solutions

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Glotronic Ltd.

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Supply Digital

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Cyclops Electronics Ltd (Excess)

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Bastille Electronics

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Kepictronics

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Overview

Elevate your electronic designs with the BCV62C,215 from NXP Semiconductors. This PNP small signal bipolar junction transistor offers unparalleled quality and reliability, making it the perfect choice for current mirror configurations in a variety of applications. With a high DC current gain of 420 and a low VCEsat of 0.65V, this transistor delivers exceptional performance while operating at temperatures up to 150°C. Trust NXP Semiconductors to provide you with cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for use in complementary PNP/NPN configurations, offering flexibility in circuit design.

Configuration: CURRENT MIRROR

Ideal for applications where precise current replication or matching is required, such as in differential amplifiers or current sources.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving space and reducing overall product size.

Maximum VCEsat: 0.65 V

Low VCEsat helps minimize power dissipation and improve efficiency in switching applications.

Package Shape: RECTANGULAR

Facilitates easy handling and placement on PCBs, contributing to simplified assembly processes.

No. of Terminals: 4

Provides necessary connections for basic transistor functions, ensuring compatibility with standard circuit designs.

Minimum DC Current Gain (hFE): 420

High hFE value indicates good amplification capability, making the transistor suitable for signal amplification tasks.

Maximum Operating Temperature: 150 °C

Allows for reliable operation in a wide range of temperature conditions, ensuring product performance and longevity.

Maximum Collector-Emitter Voltage: 30 V

Sufficient voltage rating for many small signal applications, providing design flexibility and compatibility with various circuit requirements.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance characteristics, stability, and reliability, making them a common choice for many electronic applications.

Maximum Collector Current (IC): 0.1 A

Adequate collector current rating for small signal applications, ensuring safe operation within specified limits.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections during PCB assembly.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and allows for easier interfacing with other components in the circuit.

Case Connection: COLLECTOR

Collector case connection simplifies heat dissipation mechanisms and enables efficient thermal management in the circuit.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency indicates good high-frequency performance, suitable for applications requiring fast switching or amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV62C,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

FOR TRANSISTOR2 HFE IS 420

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BCV62C,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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