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BCV61A-TAPE-13

NXP Semiconductors

BCV61A-TAPE-13 by NXP Semiconductors

BCV61A-TAPE-13 from NXP Semiconductors is an NPN small signal BJT ideal for current mirror applications. It features a max VCEsat of 0.6V, hFE of 110, and operates up to 150 °C. Its compact design with gull-wing terminals ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,688 parts In-Stock

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3,688

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Vyrian

USA . 906 parts In-Stock

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Anansix

USA . 103 parts In-Stock

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103

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Distributors (Availability)

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One Stop Electronics

USA . 970 parts In-Stock

1+ parts

$28.050

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970

$28.050

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UNI Independent Distributors

Spain . 6,489 parts In-Stock

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Corphita

USA . 3,171 parts In-Stock

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Northwest PG Solutions

USA . 1,641 parts In-Stock

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$3.205

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Native Components

USA . 560 parts In-Stock

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$3.172

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Overview

Elevate your projects with the BCV61A-TAPE-13 from NXP Semiconductors, a trusted leader in innovative technology. This high-performance NPN small signal BJT is designed for efficiency and reliability, perfect for current mirror applications. Its surface-mount design ensures flexibility in various electronic circuits, while its robust construction withstands temperatures up to 150 °C. Choose NXP for unmatched quality and performance that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection from environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in amplifiers and switches, providing versatility in circuit design.

Configuration: CURRENT MIRROR

The current mirror configuration allows for accurate current replication, making it ideal for applications requiring precise current control.

Surface Mount: YES

Being surface mount compatible facilitates compact design and ease of integration into modern circuit layouts.

Maximum VCEsat: 0.6 V

The low maximum collector-emitter saturation voltage ensures more efficient operation, reducing power loss in switched applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on printed circuit boards.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and ensure reliable connections during assembly.

No. of Terminals: 4

With 4 terminals, this BJT offers a straightforward connection setup, simplifying circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes board space consumption, essential for compact electronic devices.

Minimum DC Current Gain (hFE): 110

A high minimum DC current gain ensures effective amplification of signals, making it great for audio and RF applications.

Maximum Operating Temperature: 150 °C

Having a high maximum operating temperature provides reliability in demanding environments, enhancing longevity.

Maximum Collector-Emitter Voltage: 30 V

A maximum collector-emitter voltage of 30 V allows for versatile use in various voltage-sensitive applications.

Transistor Element Material: SILICON

Silicon material ensures good thermal stability and performance, making it a standard choice for BJTs.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A supports a wide range of applications, from signal processing to switching.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting options, accommodating different circuit configurations.

Case Connection: COLLECTOR

Collector case connection optimally positions the transistor for effective heat dissipation and performance.

Nominal Transition Frequency (fT): 300 MHz

A high nominal transition frequency of 300 MHz enables high-speed operation, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV61A-TAPE-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BCV61A-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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