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BCV62,215

NXP Semiconductors

BCV62,215 by NXP Semiconductors

BCV62,215 by NXP Semiconductors is a PNP BJT with VCEsat of 0.65V and hFE of 100. Ideal for current mirror configurations in applications requiring a max IC of 0.1A and VCE of 30V. This small outline transistor operates up to 150°C with a transition frequency of 100MHz.

Median Price

$0.201

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,125 parts In-Stock

1+ parts

$0.540

100+ parts

$0.213

1k+ parts

$0.144

10k+ parts

$0.095

2,125

$0.540

$0.213

$0.144

$0.095

Mouser Electronics

USA . 776 parts In-Stock

1+ parts

$0.560

100+ parts

$0.220

1k+ parts

$0.157

10k+ parts

$0.136

776

$0.560

$0.220

$0.157

$0.136

Future Electronics

Canada . 48,000 parts In-Stock

1+ parts

-

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$0.053

48,000

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$0.053

Rochester

USA . 10,947 parts In-Stock

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$0.201

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$0.167

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$0.148

10,947

-

$0.201

$0.167

$0.148

Verical

USA . 9,757 parts In-Stock

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$0.185

9,757

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$0.185

Arrow

USA . 9,000 parts In-Stock

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$0.054

9,000

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$0.054

Chip1Stop

Japan . 6,000 parts In-Stock

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$0.078

6,000

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$0.078

Farnell

UK . 45 parts In-Stock

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$0.265

1k+ parts

$0.223

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$0.209

45

-

$0.265

$0.223

$0.209

Element14

Singapore . 45 parts In-Stock

1+ parts

-

100+ parts

$0.459

1k+ parts

$0.414

10k+ parts

$0.401

45

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$0.459

$0.414

$0.401

Distributors (In-Stock)

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Digiode

USA . 4,191 parts In-Stock

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$0.072

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$0.072

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TME

Poland . 8 parts In-Stock

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$0.430

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$0.217

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8

$0.430

$0.217

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Chip Stock

USA . 90,000 parts In-Stock

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NAC Semi

USA . 39,000 parts In-Stock

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$0.095

39,000

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$0.095

DigiKey Marketplace

USA . 9,417 parts In-Stock

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$0.080

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9,417

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$0.080

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Vyrian

USA . 7,825 parts In-Stock

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7,825

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Zilex Electronics Inc.

Canada . 2,300 parts In-Stock

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VNN

France . 1,790 parts In-Stock

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Anansix

USA . 1,665 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 495 parts In-Stock

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495

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Semi Source

USA . 141 parts In-Stock

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141

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Nova Conductors

Japan . 72 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,124 parts In-Stock

1+ parts

$0.068

100+ parts

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2,124

$0.068

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Component Stockers USA

USA . 33,518 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

33,518

$0.080

$0.070

$0.070

$0.070

AZTECH Wire

Italy . 7,471 parts In-Stock

1+ parts

$0.090

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7,471

$0.090

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Ampacity Inc.

Singapore . 14,100 parts In-Stock

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$0.100

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$0.100

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Corohmni

South Africa . 165 parts In-Stock

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$1.889

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165

$1.889

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Continental Prestige Electronics

USA . 48,360 parts In-Stock

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$0.098

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48,360

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Perfect Parts

USA . 44,124 parts In-Stock

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Lixinc

USA . 11,702 parts In-Stock

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UNI Independent Distributors

Spain . 7,931 parts In-Stock

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Argo Parts USA

USA . 4,589 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Kepictronics

USA . 2,713 parts In-Stock

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2,713

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Cyclops Electronics Ltd (Excess)

UK . 495 parts In-Stock

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495

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Supply Digital

USA . 408 parts In-Stock

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408

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of innovation with the BCV62,215 by NXP Semiconductors. As a leader in small signal bipolar junction transistors (BJT), NXP delivers top-quality products designed for current mirror configurations and PNP applications. With a minimum DC current gain of 100 and a maximum operating temperature of 150°C, this transistor offers unmatched reliability and performance. Perfect for a wide range of applications, the BCV62,215 provides customers with exceptional value, precision, and efficiency. Elevate your projects with NXP Semiconductors' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs and applications.

Configuration: CURRENT MIRROR

The current mirror configuration enables precise current matching and control in circuits, making it ideal for amplifier and signal processing applications.

Maximum VCEsat: 0.65 V

The low saturation voltage helps minimize power dissipation and improves overall efficiency of the transistor.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards, saving space and enabling compact designs.

Terminal Form: GULL WING

The gull wing terminal form provides strong connections and easy soldering capabilities, ensuring reliable performance in various applications.

No. of Terminals: 4

The 4 terminals provide flexibility in circuit connections and configurations, allowing for versatile use in different projects.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it suitable for space-constrained applications without compromising on performance.

Minimum DC Current Gain (hFE): 100

The high DC current gain ensures stable and consistent performance in amplifier circuits, maintaining signal integrity.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable operation in various environments and applications.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating provides flexibility in circuit design and protection against voltage spikes.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

The high collector current rating enables the transistor to handle larger loads and currents in circuits.

Terminal Finish: TIN

The tin terminal finish ensures good electrical conductivity and solderability, enhancing the durability and performance of the transistor.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connection and layout, allowing for easy integration into various designs.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and layout, making it easier to connect and incorporate into circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures proper soldering and component placement during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering and ensures strong connections in various manufacturing environments.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency enables fast switching speeds and high-frequency operation, making it ideal for signal processing and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV62,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BCV62,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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