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BCV62AE6327HTSA1

Infineon Technologies

BCV62AE6327HTSA1 by Infineon Technologies

BCV62AE6327HTSA1 by Infineon Technologies is a PNP BJT with 125 min hFE, 30V VCE max, and 250MHz fT. Ideal for current mirror configurations in automotive applications due to AEC-Q101 compliance and 0.1A IC max.

Median Price

$0.246

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 386 parts In-Stock

1+ parts

$0.690

100+ parts

$0.411

1k+ parts

$0.252

10k+ parts

$0.113

386

$0.690

$0.411

$0.252

$0.113

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.128

100+ parts

$1.026

1k+ parts

$0.925

10k+ parts

-

100

$1.128

$1.026

$0.925

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Rochester

USA . 9,045 parts In-Stock

1+ parts

-

100+ parts

$0.089

1k+ parts

$0.074

10k+ parts

$0.066

9,045

-

$0.089

$0.074

$0.066

Element14

Singapore . 8,820 parts In-Stock

1+ parts

-

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$0.326

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$0.252

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$0.108

8,820

-

$0.326

$0.252

$0.108

Verical

USA . 6,000 parts In-Stock

1+ parts

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$0.257

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$0.255

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$0.088

6,000

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$0.257

$0.255

$0.088

Chip1Stop

Japan . 6,000 parts In-Stock

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$0.082

6,000

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$0.082

EBV Elektronik

Germany . 6,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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$0.070

3,000

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$0.070

Farnell

UK . 4 parts In-Stock

1+ parts

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100+ parts

$0.236

1k+ parts

$0.145

10k+ parts

$0.113

4

-

$0.236

$0.145

$0.113

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 669 parts In-Stock

1+ parts

$0.069

100+ parts

-

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669

$0.069

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Nova Conductors

Japan . 150 parts In-Stock

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$0.167

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$0.167

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NAC Semi

USA . 6,000 parts In-Stock

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$0.516

6,000

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$0.516

TME

Poland . 6,000 parts In-Stock

1+ parts

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$0.125

6,000

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$0.125

VNN

France . 5,515 parts In-Stock

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Vyrian

USA . 5,131 parts In-Stock

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Semi Source

USA . 2,950 parts In-Stock

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Micros

Poland . 2,600 parts In-Stock

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$0.047

2,600

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$0.047

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,877 parts In-Stock

1+ parts

$0.060

100+ parts

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4,877

$0.060

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Corphita

USA . 589 parts In-Stock

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$0.066

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589

$0.066

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Argo Parts USA

USA . 3,804 parts In-Stock

1+ parts

$0.133

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$0.129

3,804

$0.133

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$0.129

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.167

100+ parts

$0.164

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2,000

$0.167

$0.164

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Modulus Dynamics

Lithuania . 12,571 parts In-Stock

1+ parts

$0.391

100+ parts

$0.375

1k+ parts

$0.360

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12,571

$0.391

$0.375

$0.360

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

$0.427

100+ parts

$0.196

1k+ parts

$0.138

10k+ parts

$0.097

9,000

$0.427

$0.196

$0.138

$0.097

Aztec Data Supply Inc.

USA . 3,377 parts In-Stock

1+ parts

$0.604

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$0.604

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Microchip USA

USA . 1,031 parts In-Stock

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$0.659

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Corohmni

South Africa . 948 parts In-Stock

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$0.677

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948

$0.677

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.128

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$1.026

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$0.925

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100

$1.128

$1.026

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Andel Nordic

Denmark . 58 parts In-Stock

1+ parts

$51.380

100+ parts

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$35.967

10k+ parts

$35.967

58

$51.380

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$35.967

$35.967

Epart123

USA . 150,000 parts In-Stock

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Perfect Parts

USA . 46,704 parts In-Stock

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 384 parts In-Stock

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384

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Overview

Experience the superior quality and reliability of Infineon Technologies with the BCV62AE6327HTSA1 Small Signal Bipolar Junction Transistor. Designed for current mirror applications, this PNP transistor offers a maximum collector-emitter voltage of 30V and a nominal transition frequency of 250MHz. With its small outline package style and gull wing terminals, this transistor is perfect for surface mount installations. Trust in the unmatched performance and value of Infineon Technologies for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for compact electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into a variety of circuit designs, making it versatile and convenient to use.

Configuration: CURRENT MIRROR

Being configured as a current mirror, this transistor ensures precise current replication, making it suitable for applications requiring stable current outputs.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on circuit boards, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on the circuit board, optimizing layout options for design flexibility.

Terminal Form: GULL WING

The gull wing terminals provide secure connections and easy soldering, enhancing the reliability of the transistor in various applications.

No. of Elements: 2

With two elements, this transistor offers enhanced functionality and performance for circuits requiring multiple amplification stages.

No. of Terminals: 4

The four terminals provide versatile connectivity options, allowing for easy integration into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint of the transistor, making it an excellent choice for space-constrained designs.

Minimum DC Current Gain (hFE): 125

The high minimum DC current gain ensures consistent amplification performance, making this transistor reliable for signal amplification applications.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor is suitable for low to medium voltage circuit designs.

Transistor Element Material: SILICON

The silicon material of the transistor element provides stable and reliable performance across a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for efficient power handling capabilities, making it suitable for a variety of electronic circuits.

Terminal Finish: TIN

The terminal finish of tin ensures strong and reliable electrical connections, providing long-term stability and performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and makes it easy to integrate this transistor into various electronic systems.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this transistor meets stringent automotive industry requirements for reliability and performance.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250MHz, this transistor is capable of high-speed signal processing, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV62AE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

125

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCV62AE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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