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8510203YA

NXP Semiconductors

8510203YA by NXP Semiconductors

UVPROM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Memory Density: 65536 bit;

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 3,143 parts In-Stock

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Digiode

USA . 2,860 parts In-Stock

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2,860

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Vyrian

USA . 482 parts In-Stock

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482

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Resion

USA . 110 parts In-Stock

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110

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Electronic Expediters

USA . 24 parts In-Stock

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QIE Inc.

USA . 8 parts In-Stock

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Semi Source

USA . 4 parts In-Stock

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Sunrise Surplus Inc.

USA . 3 parts In-Stock

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Distributors (Availability)

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MARBEL Systems

Belgium . 90 parts In-Stock

1+ parts

$1.795

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90

$1.795

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Texas Native Microelectronics

USA . 1,565 parts In-Stock

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$2.063

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$1.980

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$1.919

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$1.815

1,565

$2.063

$1.980

$1.919

$1.815

Kenton Components

USA . 500 parts In-Stock

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$2.476

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$2.179

500

$2.476

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$2.179

Qasali Group International

UK . 2,631 parts In-Stock

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$5.570

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$5.180

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$4.902

2,631

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One Stop Electronics

USA . 555 parts In-Stock

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$6.000

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UNI Independent Distributors

Spain . 5,987 parts In-Stock

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Corphita

USA . 2,015 parts In-Stock

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Native Components

USA . 451 parts In-Stock

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Northwest PG Solutions

USA . 207 parts In-Stock

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Perfect Parts

USA . 2 parts In-Stock

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Technical Specifications

EPROM 8510203YA attributes and parameters. Explore more EPROM devices from NXP Semiconductors

Specs

Maximum Access Time:

200 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

8KX8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Screening Level:

MIL-STD-883

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

8510203YA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

NSN

5962-01-290-2289, 5962012902289, 5962-01-290-2310, 5962012902310, 5962-01-290-1884, 5962012901884, 5962-01-320-0976, 5962013200976, 5962-01-265-8171, 5962012658171, 5962-01-381-8343, 5962013818343, 5962-01-290-2296, 5962012902296, 5962-01-290-1883, 5962012901883, 5962-01-290-5574, 5962012905574, 5962-01-290-2311, 5962012902311, 5962-01-290-1824, 5962012901824, 5962-01-290-2292, 5962012902292, 5962-01-290-2291, 5962012902291, 5962-01-290-2290, 5962012902290, 5962-01-290-1882, 5962012901882, 5962-01-290-2294, 5962012902294, 5962-01-290-2312, 5962012902312, 5962-01-290-5576, 5962012905576, 5962-01-290-5573, 5962012905573, 5962-01-290-2309, 5962012902309, 5962-01-290-2293, 5962012902293, 5962-01-290-2295, 5962012902295, 5962-01-290-5575, 5962012905575, 5962-01-290-8812, 5962012908812, 5962-01-346-9917, 5962013469917, 5962-01-345-1149, 5962013451149

NIIN

012902289, 012902310, 012901884, 013200976, 012658171, 013818343, 012902296, 012901883, 012905574, 012902311, 012901824, 012902292, 012902291, 012902290, 012901882, 012902294, 012902312, 012905576, 012905573, 012902309, 012902293, 012902295, 012905575, 012908812, 013469917, 013451149

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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