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APT35GP120J

Microsemi

APT35GP120J by Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 284 W; Maximum Collector Current (IC): 64 A; Nominal Turn Off Time (toff): 222 ns;

Median Price

$37.870

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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DigiKey

USA . 20 parts In-Stock

1+ parts

$37.870

100+ parts

$30.738

1k+ parts

-

10k+ parts

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20

$37.870

$30.738

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-

Distributors (In-Stock)

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TME

Poland . 1 parts In-Stock

1+ parts

$43.800

100+ parts

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10k+ parts

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1

$43.800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.133

100+ parts

$1.941

1k+ parts

$1.749

10k+ parts

-

2,000

$2.133

$1.941

$1.749

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Corohmni

South Africa . 63 parts In-Stock

1+ parts

$30.330

100+ parts

-

1k+ parts

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63

$30.330

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Microchip USA

USA . 3,667 parts In-Stock

1+ parts

$70.587

100+ parts

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3,667

$70.587

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Glotronic Ltd.

UK . 3,300 parts In-Stock

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3,300

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West Coast Incorporated

USA . 3,131 parts In-Stock

1+ parts

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3,131

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,000

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Perfect Parts

USA . 18 parts In-Stock

1+ parts

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18

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT35GP120J attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Additional Features:

ULTRA FAST, LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

222 ns

Nominal Turn On Time (ton):

36 ns

Trade Compliance

APT35GP120J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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