Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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APT100GLQ65JU3 by Microchip Technology is an N-CHANNEL IGBT transistor with a max VCEsat of 2.3V and a max collector-emitter voltage of 650V. Ideal for MOTOR CONTROL applications, it has a nominal turn-off time of 249ns and can handle a max power dissipation of 430W.
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This material provides good insulation and protection for the IGBT, making it suitable for various applications.
N-channel IGBTs typically have lower conduction losses and higher efficiency, making them a preferred choice for motor control applications.
The built-in diode simplifies circuit design and reduces component count, improving reliability and efficiency.
Designed specifically for motor control applications, ensuring optimal performance and efficiency in this specific use case.
Low VCEsat reduces power dissipation and improves efficiency in high-power applications.
Rectangular packages are space-efficient and provide better heat dissipation, making them suitable for compact designs.
Fast turn-off time improves switching speeds and reduces power losses, enhancing overall performance.
Having four terminals allows for easier connections and more flexibility in circuit design.
High power dissipation capability ensures reliable operation even in high-load conditions.
Flange mount packages are easy to install and provide good mechanical stability in various mounting configurations.
High maximum operating temperature ensures reliable operation in harsh environmental conditions.
With a high voltage rating, this IGBT can be used in high-power applications without the risk of breakdown.
Silicon-based transistors provide high performance and reliability in various operating conditions.
The gate-emitter voltage rating determines the maximum voltage that can be applied, ensuring safe and reliable operation.
Low minimum operating temperature allows for operation in cold environments without compromising performance.
High collector current capability makes this IGBT suitable for high-power applications.
The gate-emitter threshold voltage determines the turn-on voltage, ensuring proper switching behavior.
The upper terminal position offers easy access for connecting external circuits and components.
Isolated case connections provide safety and prevent electrical interference, ensuring reliable operation.
Fast turn-on time improves switching speeds, reducing power losses and improving overall efficiency.
Insulated Gate Bipolar Transistors (IGBT) APT100GLQ65JU3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology
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APT100GLQ65JU3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Other - Integration 13/May/2020
Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.
President and CEO
Ganesh Moorthy
Executive Chair
Steve Sanghi
CFO, Senior VP
J. Eric Bjornholt
Fab 5 - Colorado
Fabrication
Fab Initiation
1995
USA
Colorado Springs
Wafer Capacity
70,000
Santa Clara
1990
1,290
Lawrence
1989
5,000
Fab 4 - Gresham
1988
Gresham
50,000
Fab 2 - Tempe
1994
Tempe
30,000
Beverly
1985
2,000
Lowell
1986
15,000
Garden Grove
12,000
New Fab - Gresham
2024
BAV99
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MICRODIODE ELECTRONICS SHENZHEN CO LTD
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
MBR130T1G
Onsemi
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
1N4148
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
ULN2803ADWG4
Texas Instruments
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
SMBJ18CA
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Rochester Electronics
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Comchip Technology
APT200GN60J
Microchip Technology
APT200GN60J by Microchip Technology is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 250A max collector current. It has a power dissipation of 682W, turn-off time of 1210ns, and turn-on time of 75ns. Ideal for power control applications requiring high voltage and current handling capabilities.
F3L300R12ME4B23BOSA1
Infineon Technologies
F3L300R12ME4B23BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 450A. This IGBT is designed for power control applications with UL approval.
AUIRGDC0250
AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.
CM900DU-24NF
Mitsubishi Electric
Mitsubishi Electric's CM900DU-24NF is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.5V and can handle up to 900A collector current, making it ideal for high-power control applications. With a max power dissipation of 2550W and operating temperature of 150°C, it offers reliable performance in demanding environments.
IRG7PH42UD2-EP
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Terminals: 3; Case Connection: COLLECTOR;
APT50GR120JD30
Microsemi
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
STGE200NB60S
STMicroelectronics
STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.
IKW40N60H3FKSA1
IKW40N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 249ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 175°C in a PLASTIC/EPOXY package style.
FS150R06KE3BOSA1
FS150R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 600V, current of 150A, and turn off time of 450ns. Ideal for applications requiring high power efficiency and temperature resistance like industrial motor drives.
IRGP50B60PDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Collector Current (IC): 75 A; Maximum Fall Time (tf): 65 ns;
6MS24017P43W41646NOSA1
6MS24017P43W41646NOSA1 by Infineon Technologies is an N-Channel IGBT with 12 elements. It has a max collector-emitter voltage of 1700V and operates b/w -25°C to 55°C. Ideal for power control applications, this surface-mount transistor features a silicon element in a rectangular package style.
IXGH10N170A
Littelfuse
IXGH10N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 10A max collector current, and 240ns nominal turn off time. Ideal for motor control applications due to its single configuration and through-hole terminal form.
APT200GN60JDQ4
Microchip Technology's APT200GN60JDQ4 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 283A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 660ns turn off time, and 130ns turn on time. Package style is flange mount with plastic/epoxy body material.
FGH60N60SMD
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Case Connection: COLLECTOR;
FF150R12RT4HOSA1
FF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a toff of 490 ns, and ton of 185 ns. It is used for POWER CONTROL applications, featuring a max Vce of 1200V and operating temperature of 175°C in a FLANGE MOUNT package.
HGTG12N60A4D
HGTG12N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 54A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode and fast switching times (toff:180ns, tf:95ns). Suitable for high-power systems operating in temperatures ranging from -55°C to 150°C.
IKD06N60RFATMA1
IKD06N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 12A IC, and 100W power dissipation. It operates up to 175°C making it suitable for high-power applications in industries like automotive and renewable energy.
IRG7PH42UD2-EP by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 1200V and a collector current of 60A. It has a nominal turn-off time of 470ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and a built-in diode for efficient performance.
IRG4BC30KD-SPBF
IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
IRG4PH20KPBF
IRG4PH20KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 24W. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 720ns and Max Fall Time of 400ns. Ideal for high-power systems requiring efficient switching capabilities.
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APT100GN60LDQ4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
APT100GT120JU2
Microchip Technology's APT100GT120JU2 is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 140A, ideal for power control applications. Featuring a built-in diode, it has a max VCE of 1200V and can handle up to 480W power dissipation. With fast turn-on/off times (ton: 335ns, toff: 610ns), this rectangular package transistor operates at temperatures up to 150°C.
APT150GN120JDQ4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 215 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
APT100GN60B2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Transistor Application: POWER CONTROL;
APT150GN60JDQ4
APT150GN60JDQ4 by Microchip Technology is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 30V. It has a nominal turn-off time of 575ns, making it ideal for power control applications requiring high current handling capabilities up to 220A. The transistor's package style is flange mount, and it is UL recognized for reliable performance in various industrial settings.
APT100GLQ65JU2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 430 W; Maximum Collector Current (IC): 165 A; Maximum Gate-Emitter Threshold Voltage: 5.6 V;
APT100GT120JU3
APT100GT120JU3 by Microchip Technology is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 140A. It is commonly used for power control applications, offering a nominal turn off time (toff) of 610ns and a max operating temperature of 150°C.
APT100GF60JRD
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 140 A; Peak Reflow Temperature (C): NOT SPECIFIED;
APT100GT120JRDLG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 570 W; Maximum Collector Current (IC): 123 A; Maximum Collector-Emitter Voltage: 1200 V;
APT100GLQ65JU3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 430 W; Maximum Collector Current (IC): 165 A; JESD-30 Code: R-PUFM-X4;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 430 W; Maximum Collector Current (IC): 165 A; Maximum VCEsat: 2.3 V;
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