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APT100GLQ65JU3

Microsemi

APT100GLQ65JU3 by Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 430 W; Maximum Collector Current (IC): 165 A; JESD-30 Code: R-PUFM-X4;

Median Price

$25.880

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 65 parts In-Stock

1+ parts

$25.880

100+ parts

$24.710

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65

$25.880

$24.710

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$24.790

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98

$24.790

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VNN

France . 4,080 parts In-Stock

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4,080

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Vyrian

USA . 3,422 parts In-Stock

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3,422

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.633

100+ parts

$1.617

1k+ parts

$1.551

10k+ parts

-

1,000

$1.633

$1.617

$1.551

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AZTECH Wire

Italy . 237 parts In-Stock

1+ parts

$19.440

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237

$19.440

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Ampacity Inc.

Singapore . 1,592 parts In-Stock

1+ parts

$24.050

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1,592

$24.050

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Microchip USA

USA . 482 parts In-Stock

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$64.929

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482

$64.929

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Fulton Briggs Corp.

USA . 3,471 parts In-Stock

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3,471

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$24.294

1k+ parts

$23.551

10k+ parts

$23.055

1,000

-

$24.294

$23.551

$23.055

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT100GLQ65JU3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

5.6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

249 ns

Nominal Turn On Time (ton):

48 ns

Maximum VCEsat:

2.3 V

Trade Compliance

APT100GLQ65JU3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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