Loading...

HGTP7N60B3

Intersil

HGTP7N60B3 by Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 14 A; Package Body Material: PLASTIC/EPOXY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 766 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

766

-

-

-

-

Electronic Expediters

USA . 45 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45

-

-

-

-

Vyrian

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

LittleDiode

UK . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,048 parts In-Stock

1+ parts

$5.750

100+ parts

-

1k+ parts

$5.520

10k+ parts

$5.520

1,048

$5.750

-

$5.520

$5.520

Supply Digital

USA . 2,691 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,691

-

-

-

-

Corphita

USA . 655 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

655

-

-

-

-

Assy Fe

Spain . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP7N60B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Intersil

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

80 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

46 ns

Trade Compliance

HGTP7N60B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Intersil

Japanese semiconductor company Renesas acquired Intersil on February 24, 2017. Intersil Corporation (NASDAQ:ISIL), a wholly owned subsidiary of Renesas Electronics Corporation, is a leading provider of innovative power management and precision analog solutions. The company's products form the building blocks of increasingly intelligent, mobile and power hungry electronics enabling advances in power management to improve efficiency and extend battery life. With a deep portfolio of intellectual property and a rich history of design and process innovation, Intersil is the trusted partner to leading companies in some of the world's largest markets, including the industrial and infrastructure, mobile computing, automotive and aerospace.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.