Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BSM75GD120DLC by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It features a VCEsat of 2.6V, IC of 125A, and Pmax of 500W. Ideal for applications requiring high power dissipation and fast switching times like motor drives and inverters.
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N-CHANNEL IGBTs offer lower conduction losses and better efficiency compared to P-CHANNEL IGBTs, making them a preferred choice for high power applications.
Having a bridge configuration with built-in diodes simplifies circuit design and allows for easier implementation in various power electronics applications.
The low VCEsat value indicates minimal voltage drop across the collector-emitter terminals, leading to lower power dissipation and improved efficiency.
Rectangular packages are easier to handle and mount on circuit boards, enhancing the convenience of integrating these IGBTs into electronic systems.
Having 6 elements in the IGBT allows for higher power handling capacity and increased reliability in demanding applications.
A fast turn-off time ensures quick switching speeds, reducing power loss and improving overall performance of the IGBT.
With a high maximum power dissipation rating, this IGBT can effectively handle high power levels without risking overheating or damage.
Flange mount packages provide secure and reliable mechanical mounting, ensuring stability and durability in industrial environments.
The high maximum operating temperature tolerance allows for reliable operation in harsh environmental conditions without compromising performance.
The high collector-emitter voltage rating enables this IGBT to handle high voltage levels, making it suitable for a wide range of power applications.
Silicon-based IGBTs offer high reliability, efficiency, and switching speeds, making them a popular choice for power electronics applications.
A high gate-emitter voltage rating provides greater flexibility in controlling the IGBT's switching behavior, ensuring precise and efficient operation.
The high collector current rating allows this IGBT to handle large current loads, making it suitable for high-power applications that require robust performance.
Upper terminal position simplifies the connection and integration of the IGBT in circuit layouts, improving overall system efficiency and reliability.
Having an isolated case connection enhances safety by reducing the risk of short circuits and electrical interference in the circuitry.
A fast turn-on time ensures quick activation of the IGBT, facilitating rapid switching and efficient operation in high-frequency applications.
Insulated Gate Bipolar Transistors (IGBT) BSM75GD120DLC attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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BSM75GD120DLC Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LL4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
LM317D2TG
Onsemi
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
LM7805CT/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Texas Instruments
LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
Formosa Microsemi
Taiwan Semiconductor
1N4148
Multicomp Pro
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
LM358N
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Config: SINGLE;
NC7WZ17P6X
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
SS14
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FF650R17IE4DB2BOSA1
Infineon Technologies' FF650R17IE4DB2BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It offers VCEsat of 2.45V, IC of 930A, and Pmax of 4150W. Ideal for power control applications due to its high voltage rating (1700V) and fast switching times (ton:765ns, toff:1870ns).
IGP40N65H5XKSA1
Infineon's IGP40N65H5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
NXH450B100H4Q2F2PG-R
Insulated Gate Bipolar Transistors;
HGT1S10N120BNS
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL; Package Style (Meter): SMALL OUTLINE;
SKM150GB12T4G
Semikron International
SKM150GB12T4G by Semikron: N-CHANNEL IGBT with 2 elements, VCEsat of 2.1V, IC of 220A. Ideal for power control applications due to its high voltage rating of 1200V and max operating temperature of 175°C. Recognized by UL, it features a flange mount package style for easy installation.
IXGH30N120B3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 3.5 V;
IXGH6N170
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V;
IRG4BC30UPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 320 ns;
IKW50N60TAFKSA1
IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.
STGW80V60DF
STMicroelectronics
STGW80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 600V collector-emitter voltage, and 120A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
IKW75N65EL5XKSA1
IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.
RGC80TSX8RGC11
ROHM
ROHM RGC80TSX8RGC11 is an N-CHANNEL IGBT with 1800V VCE, 80A IC, and 535W power dissipation. Ideal for power control applications, it features a built-in diode, 725ns turn-off time, and -40 to 175°C operating temperature range.
2MBI150NC-120
Fuji Electric
Fuji Electric's 2MBI150NC-120 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.3V, IC of 150A, and Pmax of 1100W. Ideal for POWER CONTROL applications due to its fast ton (650ns) and toff (850ns) times.
MIXA60W1200TED
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 85 A; Terminal Form: UNSPECIFIED;
FPF1C2P5MF07AM
FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.
CM600DU-12NFH
Mitsubishi Electric
Mitsubishi Electric's CM600DU-12NFH is a N-CHANNEL IGBT with 2 elements, each with built-in diode. It has a max VCEsat of 2.7V and can handle up to 600A collector current. Ideal for power control applications, this IGBT operates at a max temperature of 150°C and has an isolated case connection.
FF450R12KT4HOSA1
Infineon Technologies' FF450R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring 1200V max collector-emitter voltage and 580A max collector current. Ideal for high-power applications requiring fast switching speeds, such as industrial motor drives and renewable energy systems.
STGW25M120DF3
STGW25M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with 375W power dissipation, 1200V collector-emitter voltage, and 50A collector current. It operates up to 175°C and has a gate-emitter threshold voltage of 7V. Ideal for high-power applications in industrial electronics.
SGP10N60RUFDTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;
APTGLQ100DA120T1G
Microchip Technology's APTGLQ100DA120T1G is an N-CHANNEL IGBT with 1200V VCEsat, 414ns toff, and 520W power dissipation. Ideal for MOTOR CONTROL applications due to its built-in diode and thermistor. Operating temperature range from -40°C to 175°C ensures reliable performance in various environments.
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BSM75GB120DN2
BSM75GB120DN2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 3.2V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation of 625W and max operating temperature of 150°C.
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-XUFM-X7;
Siemens
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn Off Time (toff): 450 ns; Nominal Turn On Time (ton): 30 ns;
BSM75GB120DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: UNSPECIFIED;
BSM75GD120DLC
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 125 A; Maximum Operating Temperature: 125 Cel;
BSM75GB170DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 110 A; JESD-30 Code: R-XUFM-X7; Nominal Turn On Time (ton): 550 ns;
BSM75GB120DLC
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 690 W; Maximum Collector Current (IC): 170 A; Nominal Turn On Time (ton): 110 ns;
BSM75GB60DLCHOSA1
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: UNSPECIFIED;
BSM75GAL120DN2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BSM75GAR120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED;
BSM75GB120DLCHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 170 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;
BSM75GB170DN2
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 110 A; Transistor Element Material: SILICON;
BSM75GB120DL
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 130 A; Maximum Operating Temperature: 125 Cel; Maximum VCEsat: 2.6 V; Maximum Gate-Emitter Voltage: 20 V;
BSM75GB60DLC
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 355 W; Maximum Collector Current (IC): 100 A; Nominal Turn On Time (ton): 90 ns;
BSM75GAR120DN2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; JESD-30 Code: R-XUFM-X7;
BSM75GB100D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Transistor Application: POWER CONTROL;
BSM75GAL100D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 3.3 V; Maximum Gate-Emitter Voltage: 20 V;
BSM75GAL120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; JESD-30 Code: R-XUFM-X7; Maximum Collector-Emitter Voltage: 1200 V;
BSM75GB120D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum VCEsat: 2.8 V;
BSM75GD120DN2
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 103 A; Case Connection: ISOLATED;
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