Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BSM75GD120DLC by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It features a VCEsat of 2.6V, IC of 125A, and Pmax of 500W. Ideal for applications requiring high power dissipation and fast switching times like motor drives and inverters.
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N-CHANNEL IGBTs offer lower conduction losses and better efficiency compared to P-CHANNEL IGBTs, making them a preferred choice for high power applications.
Having a bridge configuration with built-in diodes simplifies circuit design and allows for easier implementation in various power electronics applications.
The low VCEsat value indicates minimal voltage drop across the collector-emitter terminals, leading to lower power dissipation and improved efficiency.
Rectangular packages are easier to handle and mount on circuit boards, enhancing the convenience of integrating these IGBTs into electronic systems.
Having 6 elements in the IGBT allows for higher power handling capacity and increased reliability in demanding applications.
A fast turn-off time ensures quick switching speeds, reducing power loss and improving overall performance of the IGBT.
With a high maximum power dissipation rating, this IGBT can effectively handle high power levels without risking overheating or damage.
Flange mount packages provide secure and reliable mechanical mounting, ensuring stability and durability in industrial environments.
The high maximum operating temperature tolerance allows for reliable operation in harsh environmental conditions without compromising performance.
The high collector-emitter voltage rating enables this IGBT to handle high voltage levels, making it suitable for a wide range of power applications.
Silicon-based IGBTs offer high reliability, efficiency, and switching speeds, making them a popular choice for power electronics applications.
A high gate-emitter voltage rating provides greater flexibility in controlling the IGBT's switching behavior, ensuring precise and efficient operation.
The high collector current rating allows this IGBT to handle large current loads, making it suitable for high-power applications that require robust performance.
Upper terminal position simplifies the connection and integration of the IGBT in circuit layouts, improving overall system efficiency and reliability.
Having an isolated case connection enhances safety by reducing the risk of short circuits and electrical interference in the circuitry.
A fast turn-on time ensures quick activation of the IGBT, facilitating rapid switching and efficient operation in high-frequency applications.
Insulated Gate Bipolar Transistors (IGBT) BSM75GD120DLC attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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BSM75GD120DLC Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
FT232RL-REEL
FTDI
FTDI's FT232RL-REEL is a bus controller with 28 terminals, operating at 3.3V to 5.25V. It supports USB, VBUS, and UART buses with a data transfer rate of 60MBps. Ideal for industrial applications due to its CMOS technology and compatibility with RS232, RS422, and RS485 standards.
LM555CN
Rochester Electronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
LL4148
Semtech Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Siemens
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
SS14
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
ULN2803ADWG4
Texas Instruments
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
2N2222A
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Meritek Electronics
MBRS340T3G
Onsemi
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM358AN
NXP Semiconductors
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
DRV5053VAQLPG
Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CM200TX-24T
Mitsubishi Electric
Mitsubishi Electric's CM200TX-24T is an N-CHANNEL IGBT with 1200V VCEsat, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration in a rectangular package with 35 terminals. Operating b/w -40 to 150 °C, it offers fast rise/fall times of 200/500 ns.
IGB50N60TATMA1
IGB50N60TATMA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications requiring fast switching speeds. This insulated gate bipolar transistor (IGBT) comes in a surface-mount package with GULL WING terminals, ideal for high-power electronic systems operating at temperatures up to 175°C.
FGB20N60SFD-F085
FGB20N60SFD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Ptot. Ideal for power control applications due to its fast tr of 21ns and tf of 43ns. AEC-Q101 certified for automotive use, it features a small outline package style.
IRG4PC30UPBF
IRG4PC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. Ideal for POWER CONTROL applications due to its fast switching times (ton: 33ns, toff: 320ns) and high operating temperature of 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
FS25R12YT3
Infineon FS25R12YT3 is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 40A, and Pmax of 165W. Ideal for high-power applications like motor drives due to its fast turn-off time (toff) of 640ns and turn-on time (ton) of 120ns in a RECTANGULAR package style.
IXGH30N120B3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 3.5 V;
FF600R12ME4PB11BOSA1
Infineon's FF600R12ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring VCEsat of 2.1V and toff of 770ns. Ideal for POWER CONTROL applications, it operates up to 1200V at temperatures from -40°C to 150°C.
IRGB20B60PD1PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;
FGH40N60SMD_F085
Fairchild Semiconductor's FGH40N60SMD_F085 is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 349W Ptot. Ideal for power control applications, it features a tr of 36.4ns, tf of 81ns, and toff of 172.5ns. This single transistor with built-in diode operates up to 175°C and complies with AEC-Q101 standards.
AFGHL50T65SQD
AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.
AUIRG4PH50S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 57 A; Terminal Finish: MATTE TIN OVER NICKEL;
IRG4PC50WPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;
IKD06N65ET6ARMA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IHW25N120E1XKSA1
IHW25N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and collector current of 50A. It has a turn off time of 1677ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
IHW30N160R2FKSA1
IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
2MBI300U2B-060-50
Fuji Electric
Fuji Electric's 2MBI300U2B-060-50 IGBT features N-CHANNEL polarity, SERIES CONNECTED configuration with 2 elements & built-in diode. Ideal for POWER CONTROL applications with max VCEsat of 2.45V and IC of 300A. Operates at up to 150°C, offering fast turn-off time (toff) of 480ns and turn-on time (ton) of 400ns.
F3L75R12W1H3B27BOMA1
Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
FGH40N65UFDTU_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL;
FF400R06KE3HOSA1
FF400R06KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 500A. It is designed for power control applications, offering a nominal turn-off time of 600ns and a nominal turn-on time of 190ns.
AUIRG4BC30U-S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Qualification: Not Qualified;
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BSM75GB120DN2
BSM75GB120DN2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 3.2V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation of 625W and max operating temperature of 150°C.
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-XUFM-X7;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn Off Time (toff): 450 ns; Nominal Turn On Time (ton): 30 ns;
BSM75GB120DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: UNSPECIFIED;
BSM75GD120DLC
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 125 A; Maximum Operating Temperature: 125 Cel;
BSM75GB170DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 110 A; JESD-30 Code: R-XUFM-X7; Nominal Turn On Time (ton): 550 ns;
BSM75GB120DLC
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 690 W; Maximum Collector Current (IC): 170 A; Nominal Turn On Time (ton): 110 ns;
BSM75GB60DLCHOSA1
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: UNSPECIFIED;
BSM75GAL120DN2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BSM75GAR120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED;
BSM75GB120DLCHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 170 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;
BSM75GB170DN2
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 110 A; Transistor Element Material: SILICON;
BSM75GB120DL
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 130 A; Maximum Operating Temperature: 125 Cel; Maximum VCEsat: 2.6 V; Maximum Gate-Emitter Voltage: 20 V;
BSM75GB60DLC
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 355 W; Maximum Collector Current (IC): 100 A; Nominal Turn On Time (ton): 90 ns;
BSM75GAR120DN2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; JESD-30 Code: R-XUFM-X7;
BSM75GB100D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Transistor Application: POWER CONTROL;
BSM75GAL100D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 3.3 V; Maximum Gate-Emitter Voltage: 20 V;
BSM75GAL120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; JESD-30 Code: R-XUFM-X7; Maximum Collector-Emitter Voltage: 1200 V;
BSM75GB120D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum VCEsat: 2.8 V;
BSM75GD120DN2
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 103 A; Case Connection: ISOLATED;
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