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BB55502VH7912XTSA1

Infineon Technologies

BB55502VH7912XTSA1 by Infineon Technologies

Infineon's BB55502VH7912XTSA1 is a single varactor diode with 18.7pF capacitance, 30V breakdown voltage, and -55 to 150°C operating range. Ideal for ultra-high frequency applications, it features a small outline package and flat terminal form for surface mount assembly.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 396,256 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

396,256

-

$0.066

$0.055

$0.049

DigiKey

USA . 396,256 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.070

396,256

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-

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$0.070

Verical

USA . 396,256 parts In-Stock

1+ parts

-

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-

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$0.061

396,256

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$0.061

Distributors (In-Stock)

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Digiode

USA . 963 parts In-Stock

1+ parts

$0.051

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-

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963

$0.051

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.129

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300

$0.129

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Vyrian

USA . 427,177 parts In-Stock

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427,177

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Chip Stock

USA . 5,280 parts In-Stock

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5,280

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IBS Electronics

USA . 950 parts In-Stock

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$0.056

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950

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$0.056

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VNN

France . 907 parts In-Stock

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907

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Distributors (Availability)

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Continental Prestige Electronics

USA . 386 parts In-Stock

1+ parts

$0.027

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386

$0.027

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Ampacity Inc.

Singapore . 410,419 parts In-Stock

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$0.046

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Corphita

USA . 908 parts In-Stock

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$0.049

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908

$0.049

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Netroflash

USA . 1,000 parts In-Stock

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$0.129

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$0.126

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1,000

$0.129

$0.126

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Modulus Dynamics

Lithuania . 31,045 parts In-Stock

1+ parts

$0.175

100+ parts

$0.168

1k+ parts

$0.161

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31,045

$0.175

$0.168

$0.161

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RC Electronics

USA . 134,114 parts In-Stock

1+ parts

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$0.090

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$0.080

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$0.080

134,114

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$0.090

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$0.080

Lixinc

USA . 13,449 parts In-Stock

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Overview

Discover the superior quality and performance of the BB55502VH7912XTSA1 Varactor Diode by Infineon Technologies. Designed for ultra high frequency applications, this diode offers precision and reliability in a compact package. With Infineon's reputation for excellence in semiconductor technology, customers can trust that they are investing in a top-tier product. Whether used in telecommunications, aerospace, or consumer electronics, this diode provides unmatched value with its high capacitance ratio and wide operating temperature range. Upgrade your projects with the BB55502VH7912XTSA1 and experience the difference that quality engineering can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this varactor diode lightweight and durable, suitable for various applications.

Config: SINGLE

The single configuration simplifies the circuit design, making it easier to use and integrate into electronic systems.

Frequency Band: ULTRA HIGH FREQUENCY

With a frequency band suitable for ultra high frequency applications, this varactor diode is ideal for high-performance communication systems.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on printed circuit boards, saving time and effort in assembly.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, saving space and allowing for efficient board layout in electronic devices.

No. of Terminals: 2

With just 2 terminals, this varactor diode simplifies wiring connections, reducing the risk of errors in circuit assembly.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances the overall compactness of the diode, making it suitable for space-constrained applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this varactor diode can withstand high temperatures, ensuring reliable performance in harsh environments.

Minimum Operating Temperature: -55 °C

The wide operating temperature range of -55°C makes this varactor diode suitable for use in a variety of temperature conditions.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connectivity, allowing for easy interfacing with other components.

Nominal Diode Capacitance: 18.7 pF

The nominal diode capacitance of 18.7 pF ensures stable and precise tuning in RF applications, making it an ideal choice for frequency control circuits.

Minimum Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this varactor diode offers reliable protection against voltage spikes, ensuring long-term durability.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance diode type allows for dynamic adjustment of capacitance, making it suitable for frequency modulation and tuning applications.

Terminal Form: FLAT

The flat terminal form simplifies soldering and ensures a secure connection, enhancing the reliability of the varactor diode.

Diode Cap Tolerance: 6.67 %

The diode capacitance tolerance of 6.67% ensures consistent performance and accuracy in tuning applications, making this varactor diode a reliable choice.

Diode Element Material: SILICON

The use of silicon as the diode element material provides excellent performance characteristics, such as low leakage current and high stability.

Minimum Diode Capacitance Ratio: 6

The minimum diode capacitance ratio of 6 allows for precise tuning and modulation in RF circuits, making this varactor diode suitable for high-frequency applications.

Technical Specifications

Varactor Diodes BB55502VH7912XTSA1 attributes and parameters. Explore more Varactor Diodes devices from Infineon Technologies

Specs

Additional Features:

LOW INDUCTANCE

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

6.67 %

Minimum Diode Capacitance Ratio:

6

Nominal Diode Capacitance:

18.7 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BB55502VH7912XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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