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BAR6304WE6327XT

Infineon Technologies

BAR6304WE6327XT by Infineon Technologies

Infineon's BAR6304WE6327XT is a PIN diode with 2 elements, 0.3 pF capacitance, and 2 ohm forward resistance. It operates in S band for switching applications at up to 150°C. The diode features positive-intrinsic-negative technology and has a breakdown voltage of 50V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

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1k+

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VNN

France . 1,391 parts In-Stock

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Digiode

USA . 979 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Vyrian

USA . 444 parts In-Stock

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Modulus Dynamics

Lithuania . 33,010 parts In-Stock

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$0.075

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$0.072

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Ampacity Inc.

Singapore . 577 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 264 parts In-Stock

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Argo Parts USA

USA . 4,349 parts In-Stock

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Continental Prestige Electronics

USA . 4,217 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Discover the BAR6304WE6327XT by Infineon Technologies, a top-of-the-line PIN diode designed for high-performance switching applications in the S band frequency range. With a compact small outline package and center tap configuration, this diode offers unparalleled efficiency and reliability. Infineon Technologies is known for its quality products and cutting-edge technology, ensuring that customers receive the best value for their investment. Experience seamless operation and enhanced performance with the BAR6304WE6327XT, a versatile solution for your switching needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the diodes, making them suitable for various applications.

Configuration:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS - Offers enhanced performance and efficiency due to the unique configuration.

Frequency Band:

S BAND - Ideal for applications operating within the specified frequency range.

Surface Mount:

YES - Easy to install and mount on circuit boards, saving time and effort during assembly.

Maximum Diode Capacitance:

0.3 pF - Ensures low capacitance for better signal integrity and performance.

Package Shape:

RECTANGULAR - Enables easy integration into different electronic systems.

No. of Terminals:

3 - Provides multiple connection points for versatile usage.

Package Style (Meter):

SMALL OUTLINE - Compact design for space-saving and efficient circuit layouts.

Application:

SWITCHING - Designed specifically for efficient switching applications.

Maximum Operating Temperature:

150 °C - Can withstand high temperatures, suitable for various operating environments.

Terminal Position:

DUAL - Offers flexibility in mounting and connection options.

Maximum Diode Forward Resistance:

2 ohm - Low forward resistance for efficient signal transmission.

Maximum Power Dissipation:

0.25 W - Can handle high power levels without overheating.

Nominal Minority Carrier Lifetime:

0.075 us - Short carrier lifetime for fast switching speeds.

Minimum Breakdown Voltage:

50 V - Withstands high voltages, ensuring reliability in diverse applications.

Diode Type:

PIN DIODE - Specifically designed for high-frequency applications.

Technology:

POSITIVE-INTRINSIC-NEGATIVE - Advanced technology for improved performance and reliability.

Terminal Form:

GULL WING - Easy to solder and mount onto PCBs, ensuring secure connections.

No. of Elements:

2 - Dual elements provide redundancy and improved performance.

Diode Element Material:

SILICON - Reliable and durable material for long-lasting performance.

Technical Specifications

PIN Diodes BAR6304WE6327XT attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

.3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2 ohm

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G3

Nominal Minority Carrier Lifetime:

.075 us

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Form:

Terminal Position:

Trade Compliance

BAR6304WE6327XT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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