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AUIRGP4063D

Infineon Technologies

AUIRGP4063D by Infineon Technologies

AUIRGP4063D by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 96A. It has a built-in diode, suitable for POWER CONTROL applications. With a Max Power Dissipation of 330W and fast switching times (tr: 56ns, tf: 46ns), it offers efficient performance in various power control systems.

Median Price

$7.499

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 125 parts In-Stock

1+ parts

$4.950

100+ parts

-

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-

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125

$4.950

-

-

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Rochester

USA . 336 parts In-Stock

1+ parts

$5.660

100+ parts

$5.550

1k+ parts

$5.430

10k+ parts

-

336

$5.660

$5.550

$5.430

-

DigiKey

USA . 65 parts In-Stock

1+ parts

$12.360

100+ parts

$9.246

1k+ parts

$8.051

10k+ parts

-

65

$12.360

$9.246

$8.051

-

Verical

USA . 8,833 parts In-Stock

1+ parts

-

100+ parts

$9.338

1k+ parts

$8.350

10k+ parts

$7.862

8,833

-

$9.338

$8.350

$7.862

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 94 parts In-Stock

1+ parts

$7.894

100+ parts

-

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-

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94

$7.894

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$7.967

100+ parts

-

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-

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870

$7.967

-

-

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TME

Poland . 1 parts In-Stock

1+ parts

$11.580

100+ parts

$8.290

1k+ parts

-

10k+ parts

-

1

$11.580

$8.290

-

-

Voyager Components

USA . 10 parts In-Stock

1+ parts

$17.789

100+ parts

$17.789

1k+ parts

$17.789

10k+ parts

$17.789

10

$17.789

$17.789

$17.789

$17.789

Vyrian

USA . 11,706 parts In-Stock

1+ parts

-

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11,706

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VNN

France . 3,091 parts In-Stock

1+ parts

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3,091

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ComSIT Distribution GmbH

Germany . 190 parts In-Stock

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ComSIT USA

USA . 140 parts In-Stock

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140

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 1,207 parts In-Stock

1+ parts

$1.448

100+ parts

$1.390

1k+ parts

$1.332

10k+ parts

-

1,207

$1.448

$1.390

$1.332

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Ampacity Inc.

Singapore . 11,864 parts In-Stock

1+ parts

$7.060

100+ parts

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11,864

$7.060

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Corphita

USA . 912 parts In-Stock

1+ parts

$7.479

100+ parts

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912

$7.479

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Continental Prestige Electronics

USA . 4,867 parts In-Stock

1+ parts

$7.967

100+ parts

-

1k+ parts

-

10k+ parts

$7.807

4,867

$7.967

-

-

$7.807

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$7.967

100+ parts

$7.807

1k+ parts

-

10k+ parts

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1,000

$7.967

$7.807

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Component Stockers USA

USA . 12,753 parts In-Stock

1+ parts

$8.430

100+ parts

$7.930

1k+ parts

$7.170

10k+ parts

$7.170

12,753

$8.430

$7.930

$7.170

$7.170

Perfect Parts

USA . 4,004 parts In-Stock

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4,004

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Microchip USA

USA . 1,576 parts In-Stock

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1,576

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Argo Parts USA

USA . 1,129 parts In-Stock

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1,129

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Authorized Procurement Solutions

USA . 400 parts In-Stock

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400

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Kepictronics

USA . 68 parts In-Stock

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68

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Overview

Elevate your power control capabilities with the AUIRGP4063D by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers high-quality Insulated Gate Bipolar Transistors (IGBT) like no other. With its N-CHANNEL polarity, SINGLE configuration with built-in diode, and maximum operating temperature of 175°C, this transistor is perfect for a wide range of power control applications. Experience the value, benefits, and advantages that this product offers - from its fast rise and fall times to its high power dissipation capacity. Upgrade your power control systems today with the AUIRGP4063D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliable performance.

Polarity or Channel Type: N-CHANNEL

Allows for efficient operation in power control applications, making it suitable for a wide range of electronic devices.

Maximum Rise Time (tr): 56 ns

Fast rise time allows for quick switching, improving the efficiency of power control functions.

Maximum Power Dissipation (Abs): 330 W

High power dissipation capability ensures that the transistor can handle heavy loads without overheating.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating makes this transistor suitable for applications requiring high voltage handling.

Maximum Collector Current (IC): 96 A

High current rating allows the transistor to handle large amounts of current, making it versatile for various power control tasks.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AUIRGP4063D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

46 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

56 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

210 ns

Nominal Turn On Time (ton):

100 ns

Trade Compliance

AUIRGP4063D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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