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AUIRGP4063D-E

Infineon Technologies

AUIRGP4063D-E by Infineon Technologies

AUIRGP4063D-E by Infineon: N-CHANNEL IGBT with 96A IC, 600V VCE, and 330W Pd. Ideal for power control applications due to its fast tr of 56ns and tf of 46ns. Features single configuration with built-in diode in a rectangular package style.

Median Price

$9.338

Lifecycle Status

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12

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1k+

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Chip1Stop

Japan . 400 parts In-Stock

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$7.180

100+ parts

$5.840

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$5.690

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400

$7.180

$5.840

$5.690

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Farnell

UK . 371 parts In-Stock

1+ parts

$9.460

100+ parts

$6.360

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$5.050

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371

$9.460

$6.360

$5.050

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Element14

Singapore . 368 parts In-Stock

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$17.960

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$12.840

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$10.200

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368

$17.960

$12.840

$10.200

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Rochester

USA . 2,113 parts In-Stock

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$7.470

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$6.680

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$6.290

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$7.470

$6.680

$6.290

Verical

USA . 1,818 parts In-Stock

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$9.338

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$8.350

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$7.862

1,818

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$9.338

$8.350

$7.862

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Digiode

USA . 633 parts In-Stock

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$7.894

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Vyrian

USA . 1,627 parts In-Stock

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1,627

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VNN

France . 650 parts In-Stock

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Bristol Electronics

USA . 75 parts In-Stock

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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ComSIT USA

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Nova Conductors

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Modulus Dynamics

Lithuania . 4,400 parts In-Stock

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$1.331

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$1.275

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Ampacity Inc.

Singapore . 1,617 parts In-Stock

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$7.060

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Corphita

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$7.479

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Argo Parts USA

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Microchip USA

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Aranea Global

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Continental Prestige Electronics

USA . 1,713 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of innovation with the AUIRGP4063D-E by Infineon Technologies. As a leader in insulated gate bipolar transistors (IGBT), Infineon Technologies delivers top-quality components that excel in power control applications. With a single configuration and built-in diode, this transistor offers unmatched performance and reliability. Whether you're designing industrial machinery or renewable energy systems, the AUIRGP4063D-E provides maximum power dissipation and efficient operation. Trust Infineon Technologies to provide cutting-edge solutions that drive your projects forward.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides good insulation properties, making the IGBT suitable for high-power applications where isolation is crucial.

Polarity or Channel Type:

N-CHANNEL - N-channel IGBTs typically have lower conduction losses and higher efficiency, making them ideal for power control applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - The built-in diode allows for efficient freewheeling operation, improving overall performance in power control applications.

Transistor Application:

POWER CONTROL - Specifically designed for power control applications, this IGBT offers reliable and consistent performance in managing high power levels.

Maximum Rise Time (tr):

56 ns - The fast rise time enables quick switching speeds, reducing power loss and improving efficiency in power control applications.

Package Shape:

RECTANGULAR - The rectangular shape provides easy mounting and installation, making it convenient for various power control applications.

Terminal Form:

THROUGH-HOLE - Through-hole terminals offer secure connections, ensuring stable operation in power control systems.

Maximum Fall Time (tf):

46 ns - The fast fall time allows for rapid switching, enhancing the efficiency and reliability of power control processes.

Nominal Turn Off Time (toff):

210 ns - The relatively short turn off time improves the overall performance and responsiveness of the IGBT in power control applications.

No. of Terminals:

3 - The 3 terminals provide a simple and effective connection interface, facilitating integration into different power control systems.

Maximum Power Dissipation (Abs):

330 W - With a high maximum power dissipation capacity, this IGBT can handle substantial power loads in power control applications.

Package Style (Meter):

FLANGE MOUNT - The flange mount style offers secure and stable mounting options, ensuring longevity and reliability in power control systems.

Maximum Operating Temperature:

175 °C - The high maximum operating temperature tolerance allows for reliable operation in harsh environmental conditions or high-temperature applications.

Maximum Collector-Emitter Voltage:

600 V - This high voltage rating ensures the IGBT can withstand and control substantial voltage levels in power control applications.

Transistor Element Material:

SILICON - Silicon elements offer excellent performance and reliability, making this IGBT a durable choice for power control applications.

Maximum Gate-Emitter Voltage:

20 V - The high gate-emitter voltage rating ensures stable and precise control over the IGBT's switching behavior in power control systems.

Maximum Collector Current (IC):

96 A - The high collector current rating allows the IGBT to handle significant current loads, making it suitable for power control applications.

Maximum Gate-Emitter Threshold Voltage:

6.5 V - The threshold voltage ensures the IGBT switches on/off effectively at the specified voltage levels in power control applications.

Terminal Position:

SINGLE - The single terminal position simplifies installation and makes it easy to integrate the IGBT into existing power control systems.

Case Connection:

COLLECTOR - The collector case connection provides a reliable and efficient current path, enhancing the overall performance and stability of the IGBT in power control applications.

Nominal Turn On Time (ton):

100 ns - The fast turn-on time improves the response time and efficiency of the IGBT in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AUIRGP4063D-E attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

46 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

56 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

210 ns

Nominal Turn On Time (ton):

100 ns

Trade Compliance

AUIRGP4063D-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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