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BSM200GAL120DLC

Eupec & Kg

BSM200GAL120DLC by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1300 W; Maximum Collector Current (IC): 420 A; Case Connection: ISOLATED;

Median Price

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4

In-Stock Inventory

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Vyrian

USA . 526 parts In-Stock

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Digiode

USA . 166 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 80 parts In-Stock

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Tech-Mark Corp

USA . 1 parts In-Stock

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Modulus Dynamics

Lithuania . 8,051 parts In-Stock

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$1.983

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$1.904

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$1.824

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8,051

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$1.824

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Northwest PG Solutions

USA . 1,811 parts In-Stock

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Corphita

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Native Components

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Metaverse IC Inc.

Canada . 350 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM200GAL120DLC attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

650 ns

Nominal Turn On Time (ton):

190 ns

Maximum VCEsat:

2.6 V

Trade Compliance

BSM200GAL120DLC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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