Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMN2112SN-7
Diodes Incorporated
DMN2112SN-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1.2A max drain current, ideal for switching applications. It operates in enhancement mode, with 0.5W max power dissipation and -55 to 150°C operating temperature range. The package style is small outline, making it suitable for surface mount designs.
SINGLE WITH BUILT-IN DIODE
20 V
1.2 A
.1 ohm
METAL-OXIDE SEMICONDUCTOR
45 pF
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.5 W
Not Qualified
MIL-STD-202
FET General Purpose Powers
YES
MATTE TIN
GULL WING
DUAL
30
SWITCHING
SILICON
DMN2114SN-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
.16 ohm
FET General Purpose Power
NMSD200B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 30;
60 V
.2 A
2 ohm
5 pF
R-PDSO-G6
6
DEPLETION MODE
.2 W
DMN5L06K-7
DMN5L06K-7 by Diodes Inc. is a N-channel FET for switching applications. It has a 50V DS breakdown voltage, 0.3A max drain current, and 3 ohm max on-resistance. With a small outline package style, it operates b/w -65 to 150 °C and meets MIL-STD-202 standards.
SINGLE
50 V
.3 A
3 ohm
-65 Cel
.35 W
LMN200B01-7
LMN200B01-7 by Diodes Inc. is a small signal N-channel FET with built-in bipolar transistor and resistor, used for switching applications. It has a max VCEsat of 0.3V, min DS breakdown voltage of 60V, and max operating temperature of 150°C.
BUILT IN BIAS RESISTOR
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
60
.115 A
.3 W
Other Transistors
.3 V
LMN400B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .4 A; JESD-30 Code: R-PDSO-G6;
.4 A
70
DMN32D2LV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
1.2 ohm
R-PDSO-F6
2
.4 W
FLAT
DMN3115UDM-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOW THRESHOLD
3.2 A
3.22 A
.06 ohm
.9 W
DMN2170U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
2.3 A
.07 ohm
34 pF
.6 W
DMN2230U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 20 V;
2 A
.11 ohm
30 pF
Matte Tin (Sn)
DMN33D8LDW-13
DMN33D8LDW-13 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 0.25A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package, suitable for surface mount technology.
.25 A
AEC-Q101
DMP58D0SV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
.16 A
8 ohm
1.4 pF
P-CHANNEL
DMP57D5UFB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .425 W; Maximum Drain-Source On Resistance: 6 ohm; Moisture Sensitivity Level (MSL): 1;
DRAIN
6 ohm
R-PBCC-N3
e4
CHIP CARRIER
.425 W
NICKEL PALLADIUM GOLD
NO LEAD
BOTTOM
DMP2225L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
2.6 A
1.08 W
DMN2215UDM-7
DMN2215UDM-7 by Diodes Inc. is a N-channel FET with 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 2A max drain current, and 0.1 ohm max on resistance. Package style is small outline with Gull Wing terminals, operating up to 150°C.
.65 W
DMN66D0LW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Minimum DS Breakdown Voltage: 60 V;
DMN4010LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; No. of Terminals: 5; Operating Mode: ENHANCEMENT MODE;
40 V
11.5 A
.012 ohm
S-PDSO-N5
5
SQUARE
2.45 W
DMN55D0UT-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): 30;
4 ohm
DMG3415UFY4-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .49 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .039 ohm;
16 V
2.5 A
.039 ohm
R-PDSO-N3
.49 W
DMG4468LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .99 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-N5;
7.62 A
.015 ohm
R-PDSO-N5
.99 W
BSS138-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 3.5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
3.5 ohm
8 pF
e0
.225 W
TIN LEAD
BSS123-7
Diodes Inc. BSS123-7 is a N-channel FET with 100V DS breakdown voltage, 0.17A drain current, and 6ohm on-resistance. Ideal for switching applications in small outline packages, operating from -55 to 150°C with Gull Wing terminals.
100 V
.17 A
6 pF
DMT6016LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Finish: NICKEL PALLADIUM GOLD; Terminal Position: DUAL;
8.9 A
.016 ohm
S-PDSO-N6
BSS123W-7
BSS123W-7 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
BSS84-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain-Source On Resistance: 10 ohm; Maximum Drain Current (ID): .13 A;
.13 A
10 ohm
12 pF
BSS138W-7
BSS138W-7 by Diodes Inc. is a N-channel FET with 50V breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.
UL RECOGNIZED
2N7002-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): .115 A;
7.5 ohm
2N7002DW-7
2N7002DW-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A max drain current, and 7.5 ohm on-resistance. Ideal for switching applications due to its separate dual-element configuration and built-in diode. Features small outline package style, Gull Wing terminals, and metal-oxide semiconductor technology for efficient performance in enhancement mode operation.
BS870-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
5 ohm
BSS138DW-7
BSS138DW-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm max on resistance. Ideal for switching applications, it features a small outline package with Gull Wing terminals and operates in enhancement mode up to 150°C.
235
Tin/Lead (Sn/Pb)
10
BSS84DW-7
BSS84DW-7 by Diodes Incorporated is a P-channel FET with 50V breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a small outline package, Gull Wing terminals, and 10 ohm on-resistance. Operating in enhancement mode at up to 150°C, this MOSFET has dual terminals and built-in diode elements.
BSS84W-7
BSS84W-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode at up to 150°C.
MMBF170-7
Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.
.5 A
2N7002W-7
2N7002W-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 0.115A drain current, ideal for switching applications. It features a built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.2W and small outline package style, it offers efficient performance up to 150°C.
BSS8402DW-7
BSS8402DW-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 60V DS breakdown voltage, 7.5Ω max RDS(on), and 0.115A max ID. With a dual-terminal configuration in a small outline package, it utilizes MOSFET technology for efficient performance in enhancement mode operation.
N-CHANNEL AND P-CHANNEL
DMN2022UFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .05 ohm; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e4;
7.9 A
.05 ohm
2N7002T-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
.15 W
DMB53D0UDW-7
DMB53D0UDW-7 by Diodes Inc. is a N-channel FET with VCEsat of 0.3V, DS Breakdown Voltage of 50V, and Drain-Source On Resistance of 4Ω. Ideal for switching applications, it features a built-in bipolar transistor and diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET has a max collector current of 0.1A and DC current gain of 200 hFE.
.1 A
SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
200
.25 W
DMB53D0UV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;
DMB54D0UDW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum VCEsat: .4 V;
ESD PROTECTION, LOW THRESHOLD
220
.4 V
2N7002V-7
2N7002V-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.28A drain current, and 13.5 ohm on-resistance. Ideal for switching applications due to its small outline package and enhancement mode operation. Suitable for surface mount designs with dual terminals and built-in diode elements.
.28 A
13.5 ohm
DMN100-7-F
DMN100-7-F by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 1.1A max drain current, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.5W and peak reflow temp of 260°C, it's suitable for small outline packages in high-temp environments.
1.1 A
.24 ohm
BSS84V-7
BSS84V-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max temp of 150°C. With 0.13A drain current and 10Ω on-resistance, it offers efficient performance in compact designs.
DMN5L06DW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
LOW CAPACITANCE
DMN5L06V-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .28 A; No. of Elements: 2;
DMN5L06VA-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN5L06-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN5L06T-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
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