Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMN61D9U-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;
SINGLE WITH BUILT-IN DIODE
60 V
.38 A
3.5 ohm
METAL-OXIDE SEMICONDUCTOR
2.5 pF
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.54 W
YES
MATTE TIN
GULL WING
DUAL
SWITCHING
SILICON
DMN61D9U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;
DMN1150UFL3-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-N4; Minimum Operating Temperature: -55 Cel;
DRAIN
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
12 V
2 A
.15 ohm
23 pF
R-PDSO-N4
e4
2
4
.9 W
AEC-Q101
NICKEL PALLADIUM GOLD
NO LEAD
DMN3055LFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; JESD-609 Code: e4; Maximum Feedback Capacitance (Crss): 44 pF;
30 V
5 A
.04 ohm
44 pF
S-PDSO-N6
6
SQUARE
1.36 W
DMN63D1L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .56 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
ESD PROTECTED, HIGH RELIABILITY
3 ohm
.56 W
DMN63D1LDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .39 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 60 V;
.25 A
2 ohm
2.9 pF
R-PDSO-G6
.39 W
MIL-STD-202
DMG7401SFGQ-13
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
HIGH RELIABILITY
SINGLE
9.8 A
.011 ohm
391 pF
R-PDSO-N5
5
P-CHANNEL
2.2 W
DMG7401SFGQ-7
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: R-PDSO-N5; Transistor Application: SWITCHING;
DMN3023L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; JESD-609 Code: e3;
6.2 A
.025 ohm
67 pF
1.3 W
DMP2088LCP3-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: UNSPECIFIED; Terminal Form: NO LEAD;
20 V
1.8 A
.088 ohm
8 pF
R-XBCC-N3
UNSPECIFIED
CHIP CARRIER
1.13 W
BOTTOM
DMN2010UDZ-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
24 V
11 A
.007 ohm
311 pF
R-PDSO-N6
1.6 W
DMN3016LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
10 A
.012 ohm
ZXMP6A16DN8QTA
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Reference Standard: AEC-Q101; Maximum Drain Current (ID): 2.9 A;
2.9 A
.085 ohm
R-PDSO-G8
8
30
DMN31D6UT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .32 W; Maximum Feedback Capacitance (Crss): 2.2 pF; Maximum Drain Current (ID): .35 A;
.35 A
1.5 ohm
2.2 pF
.32 W
DMN2400UFB4-7R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .47 W; Terminal Finish: NICKEL PALLADIUM GOLD; Transistor Application: SWITCHING;
.75 A
.55 ohm
4.2 pF
R-PBCC-N3
.47 W
DMN1006UCA6-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Terminal Position: BOTTOM; Package Shape: RECTANGULAR; JESD-609 Code: e4;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
R-PBGA-B6
GRID ARRAY
BALL
DMN1053UCP4-7
DMN1053UCP4-7 by Diodes Incorporated is a N-CHANNEL FET with 12V DS breakdown voltage, 4A ID, and 0.053 ohm RDS(on). Ideal for switching applications in enhancement mode, it features a built-in diode and operates in a grid array package style.
4 A
.053 ohm
126 pF
S-PBGA-B4
DMP1005UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Finish: NICKEL PALLADIUM GOLD; Case Connection: DRAIN;
12.8 A
.0085 ohm
DMP1009UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30; Package Shape: SQUARE;
.014 ohm
DMP3048LSD-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; Maximum Drain Current (ID): 4.8 A;
4.8 A
.048 ohm
DMN3110LCP3-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.38 W; Maximum Feedback Capacitance (Crss): 10 pF; Minimum DS Breakdown Voltage: 30 V;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
3.2 A
.069 ohm
10 pF
1.38 W
DMN5L06VK-13A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
50 V
.28 A
5 pF
R-PDSO-F6
.25 W
FLAT
DMN5L06VK-7A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-30 Code: R-PDSO-F6; Maximum Drain-Source On Resistance: 3 ohm;
ZXMS6001N3QTA
N-CHANNEL; Surface Mount: YES; Terminal Position: DUAL; Maximum Power Dissipation Ambient: 1.5 W; No. of Terminals: 4; Moisture Sensitivity Level (MSL): 1;
ESD PROTECTED
SOURCE
1.1 A
.675 ohm
R-PDSO-G4
-40 Cel
1.5 W
DMC62D0SVQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .84 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
.571 A
6 ohm
N-CHANNEL AND P-CHANNEL
.84 W
DMC62D0SVQ-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .84 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-F6;
DMP2120U-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .062 ohm; Maximum Feedback Capacitance (Crss): 53 pF; Minimum Operating Temperature: -55 Cel;
FAST SWITCHING
3.8 A
.062 ohm
53 pF
DMT35M7LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 534 pF; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .005 ohm;
.005 ohm
534 pF
S-PDSO-F5
1.98 W
DMN3270UVT-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Transistor Element Material: SILICON; No. of Elements: 2;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
1.6 A
.27 ohm
7.5 pF
1.08 W
DMC2057UVT-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Terminal Position: DUAL; Terminal Form: GULL WING;
.042 ohm
1.1 W
DMC3730UVT-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Terminal Finish: MATTE TIN; Package Shape: RECTANGULAR;
25 V
.46 A
1.1 ohm
175 Cel
DMN5L06VKQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN5L06WKQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: 3 ohm; Peak Reflow Temperature (C): 260;
.3 A
-65 Cel
DMT3022UEV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
17 A
.022 ohm
S-PDSO-F6
1.8 W
DMT3022UEV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN1023UCB4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; JESD-30 Code: S-PBGA-B4; Minimum DS Breakdown Voltage: 12 V;
5.1 A
30 pF
e1
1.2 W
TIN SILVER COPPER
DMP2101UCB9-7
P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 12.6 pF; No. of Terminals: 9; Peak Reflow Temperature (C): 260;
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
.1 ohm
12.6 pF
S-PBGA-B9
9
1.56 W
DMN30H4D1S-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G3;
.43 A
4 ohm
7 pF
.43 W
DMN30H4D1S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Terminal Form: GULL WING; No. of Elements: 1;
DMP2036UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum Operating Temperature: -55 Cel; Terminal Position: DUAL;
6 A
.03 ohm
117 pF
DMP2036UVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 117 pF;
DMP2109UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 87 pF;
3.7 A
.08 ohm
87 pF
DMP2109UVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
DMN3071LFR4-7R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-609 Code: e4; Package Body Material: PLASTIC/EPOXY;
3.4 A
.075 ohm
26 pF
S-PDSO-N3
DMN3071LFR4-7
DMN3071LFR4-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 3.4A ID, and 0.075 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features small outline package, -55 to 150°C operating range, and drain case connection.
DMN2012UCA6-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Body Material: UNSPECIFIED; Terminal Finish: NICKEL PALLADIUM GOLD;
102 pF
R-XBCC-N6
2.3 W
DMP2079LCA3-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; JESD-30 Code: R-PBCC-N3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
3 A
.078 ohm
4.3 pF
1.4 W
DMP1070UCA3-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Additional Features: ESD PROTECTED; Transistor Element Material: SILICON;
3.6 A
NOT SPECIFIED
NICKEL PALLADIUM GOLD/NICKEL GOLD
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