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Diodes Incorporated Small Signal Field Effect Transistors (FET) 234

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMC67D8UFDBQ-13 by Diodes Incorporated

DMC67D8UFDBQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .89 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 20 V;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.9 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

101 pF

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.89 W

AEC-Q101

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN16M0UCA6-7 by Diodes Incorporated

DMN16M0UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; No. of Elements: 2; Package Body Material: UNSPECIFIED;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N6

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

2.6 W

YES

NICKEL PALLADIUM GOLD/NICKEL GOLD

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

DMN3060LVT-13 by Diodes Incorporated

DMN3060LVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; JESD-30 Code: R-PDSO-G6; No. of Terminals: 6;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

3.6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.16 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP3164LVT-13 by Diodes Incorporated

DMP3164LVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

LOW CAPACITANCE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

2.8 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

33 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.16 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMT6030LFDF-13 by Diodes Incorporated

DMT6030LFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.62 W; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

6.8 A

.0255 ohm

METAL-OXIDE SEMICONDUCTOR

639 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.76 W

9.62 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMT6030LFDF-7 by Diodes Incorporated

DMT6030LFDF-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.62 W; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 1;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

6.8 A

.0255 ohm

METAL-OXIDE SEMICONDUCTOR

639 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.76 W

9.62 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP2900UV-7 by Diodes Incorporated

DMP2900UV-7

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F6; Terminal Form: FLAT; Terminal Position: DUAL;

LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.85 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

3.4 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.8 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN33D9LV-13A by Diodes Incorporated

DMN33D9LV-13A

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.35 A

.0024 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.43 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMPH2040UVTQ-13 by Diodes Incorporated

DMPH2040UVTQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW CAPACITANCE; No. of Elements: 1; Transistor Application: SWITCHING;

LOW CAPACITANCE

SINGLE WITH BUILT-IN DIODE

20 V

5.6 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

1.5 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.5 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMT12H090LFDF4-13 by Diodes Incorporated

DMT12H090LFDF4-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;

DRAIN

SINGLE WITH BUILT-IN DIODE

115 V

3.4 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.6 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP1008UCB9-7 by Diodes Incorporated

DMP1008UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.53 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e1;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

8 V

13.2 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBGA-B9

e1

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

1.53 W

YES

TIN SILVER COPPER

BALL

BOTTOM

SWITCHING

SILICON

DMP2541UCB9-7 by Diodes Incorporated

DMP2541UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Power Dissipation Ambient: 1.78 W; Additional Features: GATE PROTECTED;

GATE PROTECTED

SINGLE WITH BUILT-IN DIODE

25 V

5.4 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

S-PBGA-B9

1

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

1.78 W

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

DMC3060LVT-13 by Diodes Incorporated

DMC3060LVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; JESD-30 Code: R-PDSO-G6; Operating Mode: ENHANCEMENT MODE;

SEPARATE, 2 ELEMENTS

30 V

3.6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.16 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMC2710UV-13 by Diodes Incorporated

DMC2710UV-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (ID): 1.1 A; Terminal Position: DUAL;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

1.1 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.8 W

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMP1070UCA3-7A by Diodes Incorporated

DMP1070UCA3-7A

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XBCC-N3;

ESD PROTECTED

DRAIN

SINGLE WITH BUILT-IN DIODE

12 V

3.6 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

P-CHANNEL

1.36 W

YES

NICKEL PALLADIUM GOLD/NICKEL GOLD

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

DMN65D7LFR4-7 by Diodes Incorporated

DMN65D7LFR4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Package Shape: SQUARE; No. of Elements: 1;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

.26 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

2.7 pF

S-PDSO-N4

e4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

.7 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

BSS123K-13 by Diodes Incorporated

BSS123K-13

Diodes Incorporated

BSS123K-13 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.5W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

100 V

.23 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMT4031LSD-13 by Diodes Incorporated

DMT4031LSD-13

Diodes Incorporated

DMT4031LSD-13 by Diodes Inc. is a N-channel FET with 40V DS breakdown voltage, 36A IDM, and 0.023 ohm RDS(on). Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology. Operating from -55 to 150 °C, this MOSFET offers high power dissipation of 1.5W and peak reflow temp of 260C.

7.6 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

6.3 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-PDSO-G8

e3

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.5 W

36 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2710UT-7 by Diodes Incorporated

DMN2710UT-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; Minimum Operating Temperature: -55 Cel; Transistor Application: SWITCHING;

SINGLE WITH BUILT-IN DIODE

20 V

.87 A

.45 ohm

METAL-OXIDE SEMICONDUCTOR

6.5 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.52 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2110UW-13 by Diodes Incorporated

DMP2110UW-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .00065 W; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE

20 V

2 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.00065 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2310U-13 by Diodes Incorporated

DMN2310U-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .68 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;

SINGLE WITH BUILT-IN DIODE

20 V

1.6 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.68 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3060LWQ-13 by Diodes Incorporated

DMN3060LWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .64 W; Terminal Form: GULL WING; Peak Reflow Temperature (C): 260;

SINGLE WITH BUILT-IN DIODE

30 V

2.6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.64 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3061SW-13 by Diodes Incorporated

DMN3061SW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

30 V

2.7 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

29 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.65 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2065U-13 by Diodes Incorporated

DMP2065U-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

20 V

4 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

77 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN65D8LT-7 by Diodes Incorporated

DMN65D8LT-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;

SINGLE WITH BUILT-IN DIODE

60 V

.21 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

1.8 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN65D9L-13 by Diodes Incorporated

DMN65D9L-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .67 W; Maximum Drain Current (ID): .335 A; Maximum Drain-Source On Resistance: 4 ohm;

SINGLE WITH BUILT-IN DIODE

60 V

.335 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

2.6 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.67 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3060LW-13 by Diodes Incorporated

DMN3060LW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .64 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

30 V

2.6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.64 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2055UWQ-13 by Diodes Incorporated

DMN2055UWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;

SINGLE WITH BUILT-IN DIODE

20 V

3.1 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.65 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2710UW-13 by Diodes Incorporated

DMN2710UW-13

Diodes Incorporated

DMN2710UW-13 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage, 0.9A max drain current, and 0.45 ohm max on-resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. This small outline package features a built-in diode and matte tin terminal finish.

SINGLE WITH BUILT-IN DIODE

20 V

.9 A

.45 ohm

METAL-OXIDE SEMICONDUCTOR

6.5 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.6 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2310UW-13 by Diodes Incorporated

DMN2310UW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Minimum DS Breakdown Voltage: 20 V; Peak Reflow Temperature (C): 260;

SINGLE WITH BUILT-IN DIODE

20 V

1.3 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.55 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2710UTQ-13 by Diodes Incorporated

DMN2710UTQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

20 V

.87 A

.45 ohm

METAL-OXIDE SEMICONDUCTOR

6.5 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.52 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2451UFB4Q-7B by Diodes Incorporated

DMN2451UFB4Q-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-30 Code: R-PBCC-N3; Transistor Element Material: SILICON;

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1.3 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

3.7 pF

R-PBCC-N3

e4

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

1.1 W

AEC-Q101; IATF 16949

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

BSS138WQ-13-F by Diodes Incorporated

BSS138WQ-13-F

Diodes Incorporated

BSS138WQ-13-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W max power dissipation and -55 to 150°C operating temp range, it's suitable for small outline SMT designs.

SINGLE WITH BUILT-IN DIODE

50 V

.2 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

.2 W

AEC-Q101; UL RECOGNIZED

YES

GULL WING

DUAL

SWITCHING

SILICON

DMP31D7LFBQ-7B by Diodes Incorporated

DMP31D7LFBQ-7B

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .89 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 3 pF;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

.81 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

R-PBCC-N3

e4

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

P-CHANNEL

.89 W

AEC-Q101; IATF 16949

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN31D5UFZQ-7B by Diodes Incorporated

DMN31D5UFZQ-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 1.8 pF;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

.41 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

1.8 pF

R-PBCC-N3

e4

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.4 W

AEC-Q101; IATF 16949

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMC31D5UDAQ-7B by Diodes Incorporated

DMC31D5UDAQ-7B

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .37 W; No. of Terminals: 6; Terminal Position: BOTTOM;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.4 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

1.8 pF

R-PBCC-N6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL AND P-CHANNEL

.37 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN62D0UV-13 by Diodes Incorporated

DMN62D0UV-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .74 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.49 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

2.4 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.74 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMP2042UCP4-7 by Diodes Incorporated

DMP2042UCP4-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .86 W; JESD-609 Code: e2; No. of Terminals: 4;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

2.9 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

S-XBCC-N4

e2

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

P-CHANNEL

.86 W

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN1032UCP4-7 by Diodes Incorporated

DMN1032UCP4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.01 W; Maximum Drain-Source On Resistance: .042 ohm; Maximum Pulsed Drain Current (IDM): 15 A;

SINGLE WITH BUILT-IN DIODE

12 V

4.8 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

31 pF

S-XBCC-N4

e2

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL

1.01 W

15 A

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN2046UVT-13 by Diodes Incorporated

DMN2046UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .94 W; Reference Standard: MIL-STD-202; No. of Terminals: 6;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.6 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

27 pF

R-PDSO-G6

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.94 W

MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON

DMP31D1UQ-7 by Diodes Incorporated

DMP31D1UQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .58 W; Maximum Feedback Capacitance (Crss): 5.8 pF; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

30 V

.62 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

5.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.58 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON

DMP31D1UQ-13 by Diodes Incorporated

DMP31D1UQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .58 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

30 V

.62 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

5.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.58 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON