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Diodes Incorporated Small Signal Field Effect Transistors (FET) 234

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN2400UFB4-7B by Diodes Incorporated

DMN2400UFB4-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .47 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-30 Code: R-PBCC-N3;

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

.75 A

.75 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

4.2 pF

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.47 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMN2300UFB-7B by Diodes Incorporated

DMN2300UFB-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY, LOW THRESHOLD

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1.78 A

1.32 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

1.2 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMS3017SSD-13 by Diodes Incorporated

DMS3017SSD-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.79 W; Minimum DS Breakdown Voltage: 30 V; Maximum Drain-Source On Resistance: .012 ohm;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

10 A

.008 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.79 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMS3019SSD-13 by Diodes Incorporated

DMS3019SSD-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.79 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

9 A

.007 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.79 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN3029LFG-13 by Diodes Incorporated

DMN3029LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .0186 ohm; Maximum Drain Current (ID): 5.3 A;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

8 A

5.3 A

.0186 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMS3016SFG-7 by Diodes Incorporated

DMS3016SFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.08 W; Package Shape: SQUARE; Case Connection: DRAIN;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

10.2 A

7 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.08 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP210DUFB4-7B by Diodes Incorporated

DMP210DUFB4-7B

Diodes Incorporated

DMP210DUFB4-7B by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.2A Drain Current, and 5.5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it's a surface mount chip carrier with Ni/Pd/Au finish, operating up to 150°C.

HIGH RELIABILITY, LOW THRESHOLD

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

.2 A

.14 A

5.5 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

P-CHANNEL

.35 W

Other Transistors

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMN26D0UFB4-7B by Diodes Incorporated

DMN26D0UFB4-7B

Diodes Incorporated

DMN26D0UFB4-7B by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current, ideal for switching applications. It operates in enhancement mode with 3ohm RDS(on) and can handle up to 0.35W power dissipation. Package style is chip carrier, suitable for surface mount assembly at max temp of 150°C.

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

.24 A

.24 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.35 W

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

2N7002-13-F by Diodes Incorporated

2N7002-13-F

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Terminal Position: DUAL; Transistor Application: SWITCHING;

HIGH RELIABILITY, LOW THRESHOLD

SINGLE WITH BUILT-IN DIODE

60 V

.21 A

.115 A

13.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.54 W

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMG7702SFG-13 by Diodes Incorporated

DMG7702SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-609 Code: e3; Transistor Element Material: SILICON;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMG7702SFG-7 by Diodes Incorporated

DMG7702SFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Terminal Position: DUAL; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP1096UCB4-7 by Diodes Incorporated

DMP1096UCB4-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .82 W; Maximum Drain Current (Abs) (ID): 2.6 A; Maximum Drain-Source On Resistance: .152 ohm;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

2.6 A

2.4 A

.152 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBGA-B4

e1

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

.82 W

Other Transistors

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

DMP3008SFG-13 by Diodes Incorporated

DMP3008SFG-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

8.6 A

7.1 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.2 W

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMS3012SFG-13 by Diodes Incorporated

DMS3012SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .01 ohm;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMS3012SFG-7 by Diodes Incorporated

DMS3012SFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Drain Current (ID): 9.5 A; Terminal Position: DUAL;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMG3415U-13 by Diodes Incorporated

DMG3415U-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

20 V

4 A

4 A

.0425 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.9 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN55D0UTQ-7 by Diodes Incorporated

DMN55D0UTQ-7

Diodes Incorporated

DMN55D0UTQ-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.16A max drain current, and 4 ohm max on resistance. It's used in small outline packages for enhancement mode operation in applications requiring high temperature tolerance up to 150°C like automotive electronics (AEC-Q101).

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

50 V

.16 A

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

BSS8402DWQ-13 by Diodes Incorporated

BSS8402DWQ-13

Diodes Incorporated

BSS8402DWQ-13 by Diodes Incorporated is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 60V DS breakdown voltage, 7.5Ω max RDS(on), and 5pF Crss capacitance. With AEC-Q101 compliance, it suits automotive electronics requiring high reliability in compact designs.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BSS84DWQ-7 by Diodes Incorporated

BSS84DWQ-7

Diodes Incorporated

BSS84DWQ-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max 150°C. With 0.13A drain current and 10Ω on resistance, it offers reliable performance in various electronic circuits.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.13 A

.13 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMB53D0UV-13 by Diodes Incorporated

DMB53D0UV-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

HIGH RELIABILITY

.1 A

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

200

50 V

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

AEC-Q101

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

.3 V

DMN5L06VK-13 by Diodes Incorporated

DMN5L06VK-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 50 V;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.28 A

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMP2004KQ-7 by Diodes Incorporated

DMP2004KQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

20 V

.6 A

.6 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.55 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2500UFB4-7B by Diodes Incorporated

DMN2500UFB4-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .95 W; Maximum Drain Current (ID): .81 A; JESD-30 Code: R-PBCC-N3;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1 A

.81 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.95 W

AEC-Q101

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMN2500UFB4-7 by Diodes Incorporated

DMN2500UFB4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .95 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PBCC-N3;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1 A

.81 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.95 W

AEC-Q101

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMP2100UCB9-7 by Diodes Incorporated

DMP2100UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; No. of Terminals: 9;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

4 A

3 A

.0175 ohm

METAL-OXIDE SEMICONDUCTOR

55 pF

S-PBGA-B9

e1

1

2

9

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

AEC-Q101

Other Transistors

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

DMS3014SFG-13 by Diodes Incorporated

DMS3014SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain Current (ID): 9 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

9.5 A

9 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP2540UCB9-7 by Diodes Incorporated

DMP2540UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: BALL; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

25 V

4 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

90 pF

S-PBGA-B9

e1

1

1

9

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

AEC-Q101

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

DMN3030LFG-13 by Diodes Incorporated

DMN3030LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Elements: 1; JESD-609 Code: e3;

SINGLE

8.6 A

8.6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

2.3 W

FET General Purpose Power

YES

MATTE TIN

30

DMN3030LFG-7 by Diodes Incorporated

DMN3030LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 8.6 A; Terminal Finish: MATTE TIN;

SINGLE

8.6 A

8.6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

2.3 W

FET General Purpose Power

YES

MATTE TIN

30

DMP2225LQ-7 by Diodes Incorporated

DMP2225LQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; No. of Elements: 1; Maximum Drain Current (ID): 2.6 A;

SINGLE

2.6 A

2.6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

P-CHANNEL

1.08 W

Other Transistors

YES

MATTE TIN

30

2N7002DWA-7 by Diodes Incorporated

2N7002DWA-7

Diodes Incorporated

2N7002DWA-7 by Diodes Inc. is an N-channel FET with max drain current of 0.2A and power dissipation of 0.4W. Ideal for surface mount applications, it operates up to 150°C making it suitable for various electronic devices requiring low-power switching capabilities.

.2 A

.2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

N-CHANNEL

.4 W

FET General Purpose Powers

YES

MATTE TIN

30

DMC6070LFDH-7 by Diodes Incorporated

DMC6070LFDH-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: MATTE TIN; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

3.1 A

3.1 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.4 W

AEC-Q101

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN2013UFDEQ-7 by Diodes Incorporated

DMN2013UFDEQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; JESD-30 Code: S-PBCC-N3; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

10.5 A

10.5 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

N-CHANNEL

2.03 W

AEC-Q101

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMN4027SSDQ-13 by Diodes Incorporated

DMN4027SSDQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17.2 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .027 ohm;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

7.1 A

5.4 A

.027 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

17.2 W

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN4020LFDE-13 by Diodes Incorporated

DMN4020LFDE-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Peak Reflow Temperature (C): 260; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

6.7 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.03 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN53D0LW-13 by Diodes Incorporated

DMN53D0LW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Maximum Feedback Capacitance (Crss): 3.9 pF; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

50 V

.25 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

3.9 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.42 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMG6301UDW-7 by Diodes Incorporated

DMG6301UDW-7

Diodes Incorporated

DMG6301UDW-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 0.24A, and operating temperature range from -55 to 150°C. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.24 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.37 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN30H14DLY-13 by Diodes Incorporated

DMN30H14DLY-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-F3;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

300 V

.21 A

14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-F3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

DMP1022UFDF-13 by Diodes Incorporated

DMP1022UFDF-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Additional Features: HIGH RELIABILITY; Package Shape: SQUARE;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

12 V

9.5 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

467 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.1 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMG3418L-13 by Diodes Incorporated

DMG3418L-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

30 V

4 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2014LHAB-7 by Diodes Incorporated

DMN2014LHAB-7

Diodes Incorporated

DMN2014LHAB-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode for switching applications. It operates in enhancement mode, has a max drain current of 9A, and low on-resistance of 0.013 ohm. With AEC-Q101 standard compliance, it's ideal for automotive electronics requiring high power dissipation up to 1.7W at temperatures ranging from -55 to 150°C.

HIGH RELIABILITY

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

9 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

145 pF

R-PDSO-N4

e4

1

2

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.7 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN1032UCB4-7 by Diodes Incorporated

DMN1032UCB4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: S-PBGA-B4;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

12 V

4.5 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

S-PBGA-B4

e1

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

N-CHANNEL

AEC-Q101

YES

TIN SILVER COPPER

BALL

BOTTOM

SWITCHING

SILICON

DMN53D0U-13 by Diodes Incorporated

DMN53D0U-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn);

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

50 V

.3 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

DMP57D5UV-7 by Diodes Incorporated

DMP57D5UV-7

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 6 ohm; Terminal Position: DUAL;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.16 A

.16 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMN26D0UFB4-7 by Diodes Incorporated

DMN26D0UFB4-7

Diodes Incorporated

DMN26D0UFB4-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.35W. This chip carrier package features a silicon transistor element and can withstand temperatures up to 150°C.

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

.23 A

.24 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.35 W

Not Qualified

AEC-Q101

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMN5L06DMK-7 by Diodes Incorporated

DMN5L06DMK-7

Diodes Incorporated

DMN5L06DMK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, ideal for switching applications. It features separate configuration with built-in diode, small outline package style, and operates in enhancement mode at up to 150°C.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.305 A

.305 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.4 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN5L06DWK-7 by Diodes Incorporated

DMN5L06DWK-7

Diodes Incorporated

DMN5L06DWK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, suitable for switching applications. It features a separate configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 0.25W and can withstand temperatures up to 150°C.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.305 A

.305 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN5L06WK-7 by Diodes Incorporated

DMN5L06WK-7

Diodes Incorporated

DMN5L06WK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.3A drain current, and 3ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, it meets AEC-Q101 standards for automotive use.

HIGH RELIABILITY, FAST SWITCHING

SINGLE WITH BUILT-IN DIODE

50 V

.3 A

.3 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

AEC-Q101

FET General Purpose Powers

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON