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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR Small Signal Field Effect Transistors (FET) 22

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTUD3171PZT5G by Onsemi

NTUD3171PZT5G

Onsemi

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .2 A;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.2 A

.2 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.2 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTZD3156CT1G by Onsemi

NTZD3156CT1G

Onsemi

NTZD3156CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 0.54A drain current, 0.55 ohm on-resistance, and 150 °C max temp.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.54 A

.54 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.28 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTZD3156CT2G by Onsemi

NTZD3156CT2G

Onsemi

NTZD3156CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 0.54A, on-resistance of 0.55 ohm, and operates at up to 150 °C. Suitable for surface mount with 6 terminals in a small outline package.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.54 A

.54 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.28 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTZD3156CT5G by Onsemi

NTZD3156CT5G

Onsemi

NTZD3156CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications with max drain current of 0.54A and on-resistance of 0.55Ω. This MOSFET has a breakdown voltage of 20V and can handle up to 150 °C operating temperature.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.54 A

.54 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.28 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTJD4001NT2G by Onsemi

NTJD4001NT2G

Onsemi

NTJD4001NT2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.25A ID, and 2.5 ohm RDS(on). It is used for SWITCHING applications in small outline packages with GULL WING terminals.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

.25 A

.25 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.272 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTUD3127CT5G by Onsemi

NTUD3127CT5G

Onsemi

NTUD3127CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode/resistor. Ideal for switching applications, it has 20V DS breakdown voltage, 0.16A max drain current, and 3 ohm max on-resistance. Operating at up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a small outline package.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.16 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

2.2 pF

R-PDSO-F6

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

Not Qualified

YES

NICKEL GOLD PALLADIUM

FLAT

DUAL

30

SWITCHING

SILICON

NTJD4158CT2G by Onsemi

NTJD4158CT2G

Onsemi

NTJD4158CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It's used for switching applications in enhancement mode. Features include 30V breakdown voltage, 0.27W power dissipation, and -55 to 150 °C operating temperature range.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

.25 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.27 W

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

SZNUD3105DMT1G by Onsemi

SZNUD3105DMT1G

Onsemi

SZNUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for AEC-Q101 compliant automotive electronics.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

6 V

.5 A

1.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTJD4401NT1 by Onsemi

NTJD4401NT1

Onsemi

NTJD4401NT1 by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 20V DS Breakdown Voltage, 0.63A Drain Current, and 0.375ohm On Resistance. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.63 A

.63 A

.375 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e0

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.55 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

SWITCHING

SILICON

NTJD4001NT1 by Onsemi

NTJD4001NT1

Onsemi

NTJD4001NT1 by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 30V DS Breakdown Voltage, 0.25A Drain Current, and 2.5 ohm On Resistance. Operating at up to 150 °C, it has a small outline package style suitable for surface mount assembly.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

.25 A

.25 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G6

e0

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.272 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

SWITCHING

SILICON

NTJD2152PT1G by Onsemi

NTJD2152PT1G

Onsemi

NTJD2152PT1G by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 8V DS Breakdown Voltage, 0.775A Drain Current, and 0.3 ohm On Resistance. It operates in ENHANCEMENT MODE with a max temp of 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

8 V

.775 A

.775 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.55 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTJD2152PT1 by Onsemi

NTJD2152PT1

Onsemi

NTJD2152PT1 by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It has a max drain current of 0.775A and on-resistance of 0.3 ohm. Ideal for switching applications in small outline packages, operating at up to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

8 V

.775 A

.775 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PDSO-G6

e0

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.55 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

SWITCHING

SILICON

NTJD4105CT2 by Onsemi

NTJD4105CT2

Onsemi

NTJD4105CT2 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 1.1A, on-resistance of 0.375 ohm & operates at up to 150°C. With a package style of small outline & Gull Wing terminals, it's designed for surface mount technology.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

1.1 A

.63 A

.375 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e0

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

.55 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTJD4105CT4G by Onsemi

NTJD4105CT4G

Onsemi

NTJD4105CT4G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 1.1A max drain current, 0.375 ohm RDS(on), and 150°C max temp making it ideal for various electronic circuits.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

1.1 A

.63 A

.375 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.55 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NTJD2152PT2G by Onsemi

NTJD2152PT2G

Onsemi

NTJD2152PT2G by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It is used for switching applications in enhancement mode. With a max drain current of 1.1A and breakdown voltage of 8V, it operates at up to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

8 V

1.1 A

.775 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.55 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTJD4152PT1 by Onsemi

NTJD4152PT1

Onsemi

NTJD4152PT1 by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.88A max drain current, and 0.26 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.88 A

.88 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.35 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTJD4401NT2G by Onsemi

NTJD4401NT2G

Onsemi

NTJD4401NT2G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 0.63A max drain current, 0.375 ohm max on resistance, and 20V min breakdown voltage. Ideal for small outline packages requiring high power dissipation up to 0.55W at 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.63 A

.63 A

.375 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.55 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTJD4401NT4G by Onsemi

NTJD4401NT4G

Onsemi

NTJD4401NT4G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. It has a max drain current of 0.63A, on-resistance of 0.375 ohm, and breakdown voltage of 20V. This small outline transistor operates in enhancement mode at up to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.63 A

.63 A

.375 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.55 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NTJD4401NT4 by Onsemi

NTJD4401NT4

Onsemi

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.63 A

.63 A

.375 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e0

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.55 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NUD3105DMT1G by Onsemi

NUD3105DMT1G

Onsemi

NUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V breakdown voltage, 0.5A drain current, and 1.3 ohm on resistance. Ideal for surface mount designs in small outline packages at temperatures up to 150°C.

LOGIC LEVEL COMPATIBLE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

6 V

.5 A

1.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

Not Qualified

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

40

SWITCHING

SILICON

SSM6N48FU,RF(D by Toshiba

SSM6N48FU,RF(D

Toshiba

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G6;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

.1 A

5.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DMN3270UVT-13 by Diodes Incorporated

DMN3270UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Transistor Element Material: SILICON; No. of Elements: 2;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

1.6 A

.27 ohm

METAL-OXIDE SEMICONDUCTOR

7.5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.08 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON