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140 MHz Small Signal Bipolar Junction Transistors (BJT) 37

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZXTC6718MCQTA by Diodes Incorporated

ZXTC6718MCQTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 4.5 A; No. of Elements: 2;

HIGH RELIABILITY

COLLECTOR

4.5 A

20 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-N8

e4

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

DUAL

30

SWITCHING

SILICON

140 MHz

ZTX651QSTZ by Diodes Incorporated

ZTX651QSTZ

Diodes Incorporated

ZTX651QSTZ by Diodes Inc. is a NPN BJT with 1.5W power dissipation, 100 hFE, and 2A collector current. Ideal for applications requiring high-speed switching in temperatures up to 200°C such as amplifiers and signal processing circuits.

2 A

SINGLE

100

e3

1

200 Cel

260

NPN

1.5 W

Other Transistors

NO

MATTE TIN

30

140 MHz

BCR112WH6327XTSA1 by Infineon Technologies

BCR112WH6327XTSA1

Infineon Technologies

BCR112WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, DC current gain of 20, and max collector current of 0.1A. This surface mount transistor in small outline package is made of silicon and operates at a nominal transition frequency of 140MHz.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

ZTX1053ASTZ by Zetex Plc

ZTX1053ASTZ

Zetex Plc

ZTX1053ASTZ by Zetex Plc is a NPN BJT transistor with hFE of 100, VCE of 75V, and IC of 3A. Ideal for small signal applications in electronics due to its high transition frequency of 140MHz. Its cylindrical package with wire terminals makes it suitable for various circuit configurations.

3 A

75 V

SINGLE

100

O-PBCY-W3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

10

SILICON

140 MHz

2SA1579T106R by ROHM

2SA1579T106R

ROHM

ROHM's 2SA1579T106R is a PNP small signal BJT transistor with a max VCEsat of 0.5V and a min DC current gain (hFE) of 180. It is commonly used as an amplifier in various applications.

.05 A

120 V

SINGLE

180

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

140 MHz

.5 V

2PB710AS,115 by NXP Semiconductors

2PB710AS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

.6 V

2PD602AQ,115 by NXP Semiconductors

2PD602AQ,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

.6 V

BC369,112 by NXP Semiconductors

BC369,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

20 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

140 MHz

MMBT2907AT-TP by Micro Commercial Components

MMBT2907AT-TP

Micro Commercial Components

MMBT2907AT-TP by Micro Commercial Components is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and operates at up to 150°C. Ideal for amplifier applications, it features a min hFE of 100 and can handle a max collector current of 0.6A.

.6 A

60 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

140 MHz

100 ns

45 ns

2SA1038STPR by ROHM

2SA1038STPR

ROHM

ROHM 2SA1038STPR is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 180, suitable for amplifier applications due to its high transition frequency of 140MHz and power dissipation of 0.3W.

.05 A

120 V

SINGLE

180

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

2SA1038STPS by ROHM

2SA1038STPS

ROHM

ROHM 2SA1038STPS is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 270, suitable for amplifier applications with a nominal transition frequency of 140MHz.

.05 A

120 V

SINGLE

270

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

2DA1774Q-7 by Diodes Incorporated

2DA1774Q-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

120

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

2DA1774R-7 by Diodes Incorporated

2DA1774R-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

2DA1774S-7 by Diodes Incorporated

2DA1774S-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

NSTB60BDW1T1 by Onsemi

NSTB60BDW1T1

Onsemi

NSTB60BDW1T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.15A, and transition frequency of 140MHz. Ideal for applications requiring high DC current gain and low power dissipation in compact designs.

BUILT IN BIAS RESISTOR RATIO IS 2.13

.15 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN AND PNP

.25 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

30

SILICON

140 MHz

2DA1774S-7-F by Diodes Incorporated

2DA1774S-7-F

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

140 MHz

IMT4-7-F by Diodes Incorporated

IMT4-7-F

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: R-PDSO-G6;

.05 A

120 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SILICON

140 MHz

IMX8-7-F by Diodes Incorporated

IMX8-7-F

Diodes Incorporated

Diodes Inc.'s IMX8-7-F is a NPN BJT with 2 elements, hFE of 180, and VCE of 120V. Ideal for small signal applications, it has a max power dissipation of 0.3W and transition frequency of 140MHz. With Gull Wing terminals and matte tin finish, it operates up to 150°C in a small outline package.

.05 A

120 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

140 MHz

2DB1697-13 by Diodes Incorporated

2DB1697-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

140 MHz

2SA1774G by Onsemi

2SA1774G

Onsemi

2SA1774G by Onsemi is a PNP BJT transistor with hFE of 120, ideal for amplifier applications. With a max voltage of 50V and max current of 0.1A, it operates at up to 150°C. Featuring a transition frequency of 140MHz, this surface-mount device in a small outline package is suitable for compact electronic designs.

.1 A

50 V

SINGLE

120

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

140 MHz

EMT1DXV6T5 by Onsemi

EMT1DXV6T5

Onsemi

EMT1DXV6T5 by Onsemi is a PNP BJT with 2 elements, hFE of 120, VCE of 60V, and fT of 140MHz. Ideal for amplifier applications, it features a small outline package with 6 terminals and can handle a max collector current of 0.1A.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

140 MHz

EMT1DXV6T5G by Onsemi

EMT1DXV6T5G

Onsemi

EMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, hFE of 120, and VCE of 60V. Ideal for amplifier applications, it has a max operating temp of 150 °C and transition frequency of 140MHz. This small outline transistor is surface mountable with matte tin finish.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

140 MHz

NSVEMT1DXV6T5G by Onsemi

NSVEMT1DXV6T5G

Onsemi

NSVEMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.5V, hFE of 120, and max IC of 0.1A. With a max operating temp of 150 °C and AEC-Q101 standard compliance, it offers high performance in small outline packages.

.1 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

140 MHz

.5 V

PDTB113EUF by Nexperia

PDTB113EUF

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB114EUF by Nexperia

PDTB114EUF

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB123EUF by Nexperia

PDTB123EUF

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB123EUX by Nexperia

PDTB123EUX

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB123YUX by Nexperia

PDTB123YUX

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT IN BIAS RESISTANCE RATIO IS 4.55

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

BCP69-16/ZLF by Nexperia

BCP69-16/ZLF

Nexperia

Nexperia's BCP69-16/ZLF is a PNP BJT transistor with hFE of 100, VCE of 20V, and IC of 2A. Ideal for switching applications, it has a fT of 140MHz and complies with AEC-Q101 and IEC-60134 standards. The package is surface mountable with GULL WING terminals in a RECTANGULAR shape.

COLLECTOR

2 A

20 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

BCP69-16/ZLX by Nexperia

BCP69-16/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 20 V;

COLLECTOR

2 A

20 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB143XTVL by Nexperia

PDTB143XTVL

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

PDTB113EU,135 by NXP Semiconductors

PDTB113EU,135

NXP Semiconductors

NXP Semiconductors' PDTB113EU,135 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 33, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB113ZU,135 by NXP Semiconductors

PDTB113ZU,135

NXP Semiconductors

NXP Semiconductors' PDTB113ZU,135 is a PNP BJT with built-in resistor for switching applications. Features include 50V VCE, 0.5A IC, and 140MHz fT. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 10

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB123EU,135 by NXP Semiconductors

PDTB123EU,135

NXP Semiconductors

The NXP Semiconductors PDTB123EU,135 is a PNP BJT with built-in resistor for switching applications. It has a hFE of 40, Vce of 50V, and fT of 140MHz. This small outline transistor features gull wing terminals in a rectangular package suitable for surface mount assembly.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB123YU,135 by NXP Semiconductors

PDTB123YU,135

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 4.55

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB143ET,215 by NXP Semiconductors

PDTB143ET,215

NXP Semiconductors

NXP Semiconductors' PDTB143ET,215 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 60, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals in a rectangular package.

BUILT IN BIAS RESISTOR RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236AB

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

2SA1774E3HZGTLQ by ROHM

2SA1774E3HZGTLQ

ROHM

ROHM 2SA1774E3HZGTLQ is a PNP BJT transistor with VCEsat of 0.5V, hFE of 120, and fT of 140MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 50V. AEC-Q101 compliant, suitable for automotive electronics requiring high reliability.

.15 A

5 pF

50 V

SINGLE

120

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

AEC-Q101

YES

GULL WING

DUAL

30

AMPLIFIER

SILICON

140 MHz

.5 V