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.15 W Small Signal Bipolar Junction Transistors (BJT) 139

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DDTC114TE-7-F by Diodes Incorporated

DDTC114TE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC115EE-7-F by Diodes Incorporated

DDTC115EE-7-F

Diodes Incorporated

DDTC115EE-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. Features include hFE of 82, VCE of 50V, and IC of 0.02A. With a transition frequency of 250MHz, it operates up to 150°C making it suitable for various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC123EE-7-F by Diodes Incorporated

DDTC123EE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC125TE-7-F by Diodes Incorporated

DDTC125TE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC143TE-7-F by Diodes Incorporated

DDTC143TE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC144TE-7-F by Diodes Incorporated

DDTC144TE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA113ZE-7-F by Diodes Incorporated

DDTA113ZE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114WE-7-F by Diodes Incorporated

DDTA114WE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114YE-7-F by Diodes Incorporated

DDTA114YE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .07 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA123JE-7-F by Diodes Incorporated

DDTA123JE-7-F

Diodes Incorporated

DDTA123JE-7-F by Diodes Inc. is a PNP BJT with 3 terminals, hFE of 80, and VCE of 50V. Ideal for small signal applications in electronics due to its compact size, high transition frequency of 250MHz, and built-in resistor configuration. With a max operating temperature of 150°C, it offers reliable performance in various circuit designs.

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA143XE-7-F by Diodes Incorporated

DDTA143XE-7-F

Diodes Incorporated

Diodes Inc. DDTA143XE-7-F is a PNP BJT with built-in resistor, hFE of 30, and VCE of 50V. Ideal for small outline applications requiring a max power dissipation of 0.15W at an operating temperature up to 150°C. Suitable for high-frequency designs with a transition frequency of 250MHz in a compact gull wing package.

BUILT-IN BIAS RESISTOR RATIO IS 2.12

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA144VE-7-F by Diodes Incorporated

DDTA144VE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

BUILT-IN BIAS RESISTOR RATIO IS 0.21

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC114WE-7-F by Diodes Incorporated

DDTC114WE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC123YE-7-F by Diodes Incorporated

DDTC123YE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.55

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC124XE-7-F by Diodes Incorporated

DDTC124XE-7-F

Diodes Incorporated

DDTC124XE-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. It features a max collector-emitter voltage of 50V, max collector current of 0.05A, and transition frequency of 250MHz. This surface mount transistor in plastic/epoxy package is suitable for low-power electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 2.14

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC144WE-7-F by Diodes Incorporated

DDTC144WE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA115EE-7-F by Diodes Incorporated

DDTA115EE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signals

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA123EE-7-F by Diodes Incorporated

DDTA123EE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signals

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA124EE-7-F by Diodes Incorporated

DDTA124EE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signals

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BC847BV-7 by Diodes Incorporated

BC847BV-7

Diodes Incorporated

BC847BV-7 by Diodes Inc. is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for small signal applications in electronics due to its high transition frequency of 100MHz, low power dissipation of 0.15W, and compact small outline package design. Suitable for surface mount PCBs requiring dual terminal configuration with matte tin finish.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

100 MHz

MMBT3906T-13 by Diodes Incorporated

MMBT3906T-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

4.5 pF

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

AEC-Q101

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

300 ns

70 ns

.4 V

MBT3904DW2T1 by Onsemi

MBT3904DW2T1

Onsemi

MBT3904DW2T1 by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W, hFE of 30, and operates up to 150 °C. This transistor features Gull Wing terminals, small outline package style, and can handle a max collector-emitter voltage of 40V.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

MMDT3906V-7 by Diodes Incorporated

MMDT3906V-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

250 MHz

300 ns

70 ns

2SA1774G by Onsemi

2SA1774G

Onsemi

2SA1774G by Onsemi is a PNP BJT transistor with hFE of 120, ideal for amplifier applications. With a max voltage of 50V and max current of 0.1A, it operates at up to 150°C. Featuring a transition frequency of 140MHz, this surface-mount device in a small outline package is suitable for compact electronic designs.

.1 A

50 V

SINGLE

120

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

140 MHz

BC857CWT1G by Onsemi

BC857CWT1G

Onsemi

BC857CWT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 420, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with matte tin terminal finish.

.1 A

4.5 pF

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

.65 V

BC847CTT1G by Onsemi

BC847CTT1G

Onsemi

BC847CTT1G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is designed for amplifier applications, featuring a small outline package style and Gull Wing terminal form for surface mount assembly. With a max operating temperature of 150°C, it offers a nominal transition frequency of 100MHz, making it suitable for high-frequency amplification needs.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

DDTC122LE-7-F by Diodes Incorporated

DDTC122LE-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

UMC2NT1G by Onsemi

UMC2NT1G

Onsemi

UMC2NT1G by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features a max VCEsat of 0.25V, common base configuration, and built-in resistor elements. Ideal for switching applications, this transistor has a max collector-emitter voltage of 50V and operates b/w -65 to 150 °C temperatures.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G5

e3

1

2

5

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

.25 V

UMA4NT1G by Onsemi

UMA4NT1G

Onsemi

UMA4NT1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.15W, and min DC current gain of 160. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mount assembly.

BUILT IN BIAS RESISTOR

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

160

R-PDSO-G5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

MUN5134DW1T1G by Onsemi

MUN5134DW1T1G

Onsemi

MUN5134DW1T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications, it has a max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

MUN5134T1G by Onsemi

MUN5134T1G

Onsemi

MUN5134T1G by Onsemi is a PNP BJT transistor with single configuration and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable and features a matte tin finish.

BUILT-IN BIAS RESISTOR RATIO IS 2.14

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signals

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

40

SWITCHING

SILICON

2DA2018-7 by Diodes Incorporated

2DA2018-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

12 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

260 MHz

2SC3324-GR(TE85L,F by Toshiba

2SC3324-GR(TE85L,F

Toshiba

Toshiba's 2SC3324-GR(TE85L,F is a NPN BJT transistor with max power dissipation of 0.15W, min hFE of 200, and max IC of 0.1A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability.

.1 A

SINGLE

200

1

125 Cel

NPN

.15 W

Other Transistors

YES

2SA1312-GR(TE85L,F by Toshiba

2SA1312-GR(TE85L,F

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

LOW NOISE

.1 A

120 V

SINGLE

200

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.15 W

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

DTC144EMFHAT2L by ROHM

DTC144EMFHAT2L

ROHM

ROHM DTC144EMFHAT2L is a NPN BJT with built-in resistor, ideal for switching applications. Features include hFE of 68, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in automotive electronics.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-F3

e2

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

AEC-Q101

BIP General Purpose Small Signal

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

NSVMSB1218A-RT1G by Onsemi

NSVMSB1218A-RT1G

Onsemi

NSVMSB1218A-RT1G by Onsemi is a PNP BJT transistor for amplifier applications. It has VCEsat of 0.5V, hFE of 210, and IC of 0.1A. With a max operating temperature of 150 °C, it comes in a small outline package with gull wing terminals.

.1 A

45 V

SINGLE

210

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

.5 V

BC857BW-G by Comchip Technology

BC857BW-G

Comchip Technology

BC857BW-G by Comchip Technology is a PNP BJT with max power dissipation of 0.15W, hFE of 220, and fT of 100MHz. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.

.1 A

SINGLE

220

e3

1

150 Cel

260

PNP

.15 W

Other Transistors

YES

TIN

10

100 MHz

BC857BW-HF by Comchip Technology

BC857BW-HF

Comchip Technology

BC857BW-HF by Comchip Technology is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 220, and IC of 0.1A, it operates at a max temperature of 150°C. Its small outline package with GULL WING terminals makes it suitable for compact electronic designs.

.1 A

4.5 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.15 W

.15 W

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

.65 V

RN1313(TE85LF) by Toshiba

RN1313(TE85LF)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

120

1

NPN

.15 W

BIP General Purpose Small Signal

YES

SILICON

MMDT2907VQ-7 by Diodes Incorporated

MMDT2907VQ-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-F6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

Matte Tin (Sn)

FLAT

DUAL

SILICON

200 MHz

100 ns

45 ns

1.6 V

RN1101MFV,L3F by Toshiba

RN1101MFV,L3F

Toshiba

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

.7 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

YES

FLAT

DUAL

SWITCHING

SILICON

.3 V

2SA1774E3HZGTLQ by ROHM

2SA1774E3HZGTLQ

ROHM

ROHM 2SA1774E3HZGTLQ is a PNP BJT transistor with VCEsat of 0.5V, hFE of 120, and fT of 140MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 50V. AEC-Q101 compliant, suitable for automotive electronics requiring high reliability.

.15 A

5 pF

50 V

SINGLE

120

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

AEC-Q101

YES

GULL WING

DUAL

30

AMPLIFIER

SILICON

140 MHz

.5 V

2SC2859-Y(TE85L,F) by Toshiba

2SC2859-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

7 pF

30 V

SINGLE

40

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

.15 W

YES

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

.25 V