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DDTA123JE-7-F

Diodes Incorporated

DDTA123JE-7-F by Diodes Incorporated

DDTA123JE-7-F by Diodes Inc. is a PNP BJT with 3 terminals, hFE of 80, and VCE of 50V. Ideal for small signal applications in electronics due to its compact size, high transition frequency of 250MHz, and built-in resistor configuration. With a max operating temperature of 150°C, it offers reliable performance in various circuit designs.

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 48,000 parts In-Stock

1+ parts

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48,000

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Verical

USA . 39,000 parts In-Stock

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$0.033

39,000

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$0.033

Distributors (In-Stock)

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NAC Semi

USA . 270,000 parts In-Stock

1+ parts

-

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$0.028

270,000

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$0.028

Vyrian

USA . 897 parts In-Stock

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897

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Distributors (Availability)

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Ampacity Inc.

Singapore . 29,388 parts In-Stock

1+ parts

$0.028

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29,388

$0.028

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Northwest PG Solutions

USA . 1,907 parts In-Stock

1+ parts

$2.409

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1,907

$2.409

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AZTECH Wire

Italy . 1,020 parts In-Stock

1+ parts

$18.970

100+ parts

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1,020

$18.970

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Perfect Parts

USA . 54,974 parts In-Stock

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54,974

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QUARKTWIN TECHNOLOGY LTD

USA . 21,144 parts In-Stock

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21,144

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Kepictronics

USA . 9,000 parts In-Stock

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9,000

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Native Components

USA . 889 parts In-Stock

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$2.124

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889

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$2.124

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Overview

Discover the superior quality and performance of the DDTA123JE-7-F by Diodes Incorporated! As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch Small Signal Bipolar Junction Transistors (BJT) with PNP polarity and a single configuration with built-in resistor. Ideal for a wide range of applications, this innovative product offers customers exceptional value, reliability, and efficiency. Experience the benefits of high DC current gain, low power dissipation, and a wide operating temperature range. Upgrade your electronic projects with the DDTA123JE-7-F and unlock endless possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications and are known for their fast switching speeds.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.15 W

Can handle decent power levels without overheating, ensuring reliable operation.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and mount on the PCB.

Maximum Collector-Emitter Voltage: 50 V

Can withstand high voltage levels in applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTA123JE-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTA123JE-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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