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DDTA143XE-7-F

Diodes Incorporated

DDTA143XE-7-F by Diodes Incorporated

Diodes Inc. DDTA143XE-7-F is a PNP BJT with built-in resistor, hFE of 30, and VCE of 50V. Ideal for small outline applications requiring a max power dissipation of 0.15W at an operating temperature up to 150°C. Suitable for high-frequency designs with a transition frequency of 250MHz in a compact gull wing package.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 696 parts In-Stock

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$0.230

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$0.194

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$0.039

696

$0.230

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$0.039

Verical

USA . 75,000 parts In-Stock

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$0.033

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Avnet

USA . 3,000 parts In-Stock

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Bristol Electronics

USA . 4,508 parts In-Stock

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$0.099

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$0.059

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$0.040

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$0.099

$0.059

$0.040

Dan-Mar Components

USA . 4,508 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,137 parts In-Stock

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Perfect Parts

USA . 10,945 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Lixinc

USA . 4,241 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Northwest PG Solutions

USA . 1,606 parts In-Stock

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Native Components

USA . 200 parts In-Stock

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Overview

Unlock the power of reliable and efficient electronics with the DDTA143XE-7-F by Diodes Incorporated. As a leader in semiconductor technology, Diodes Incorporated delivers top-quality small signal bipolar junction transistors that offer exceptional performance and durability. Whether you're designing consumer electronics, telecommunications equipment, or automotive systems, this PNP transistor with a built-in resistor is the perfect solution for your needs. Trust in Diodes Incorporated to provide you with cutting-edge technology that brings value, benefits, and advantages to your projects. Choose the DDTA143XE-7-F and experience the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing versatility.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Saves space on the PCB by integrating a resistor, making it more convenient for circuit design.

Surface Mount: YES

Facilitates easy and efficient assembly onto the surface of the PCB.

Package Shape: RECTANGULAR

Optimal shape for fitting into compact spaces on the PCB.

Maximum Power Dissipation (Abs): 0.15 W

Can handle higher power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 30

Ensures consistent and stable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring a higher voltage handling capability.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling higher current levels, suitable for various applications.

Terminal Finish: MATTE TIN

Offers good conductivity and durability for the terminal connections.

Nominal Transition Frequency (fT): 250 MHz

Capable of high-frequency operation, making it suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTA143XE-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.12

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTA143XE-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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