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4 A Small Signal Bipolar Junction Transistors (BJT) 20

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX1051ASTOB by Diodes Incorporated

ZTX1051ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1051ASTZ by Diodes Incorporated

ZTX1051ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1048ASTOB by Diodes Incorporated

ZTX1048ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTOA by Diodes Incorporated

ZTX1048ASTOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTZ by Diodes Incorporated

ZTX1048ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SWITCHING

SILICON

150 MHz

.245 V

ZXT13N50DE6QTA by Diodes Incorporated

ZXT13N50DE6QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Collector Current (IC): 4 A; Transistor Application: SWITCHING;

HIGH RELIABILITY

4 A

50 V

SINGLE

10

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

115 MHz

2SB1216S-E by Onsemi

2SB1216S-E

Onsemi

The Onsemi 2SB1216S-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. Packaged in plastic/epoxy, it has through-hole terminals and a power dissipation of 20W in an inline style package.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

2SB1216S-H by Onsemi

2SB1216S-H

Onsemi

The Onsemi 2SB1216S-H is a PNP BJT transistor with max. power dissipation of 20W, hFE of 140, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 130MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

2SB1216T-E by Onsemi

2SB1216T-E

Onsemi

The Onsemi 2SB1216T-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150 °C operating temperature. Its package style is in-line, making it suitable for through-hole mounting in various electronic circuits.

COLLECTOR

4 A

100 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

2SB1216T-TL-E by Onsemi

2SB1216T-TL-E

Onsemi

2SB1216T-TL-E by Onsemi is a PNP BJT transistor with 100V VCEO, 4A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 20W in a small outline package. With Gull Wing terminals and TIN BISMUTH finish, it operates up to 150 °C.

COLLECTOR

4 A

100 V

SINGLE

200

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

130 MHz

2SD1816S-E by Onsemi

2SD1816S-E

Onsemi

The Onsemi 2SD1816S-E is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. The package style is in-line with through-hole terminals, making it suitable for high-power dissipation up to 20W in various electronic circuits.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816S-H by Onsemi

2SD1816S-H

Onsemi

Onsemi's 2SD1816S-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. current of 4A. It has a min. DC current gain of 140, making it suitable for switching applications up to 20W power dissipation at 150°C. The through-hole package style with tin bismuth finish is ideal for various electronic designs requiring high-speed performance at a nominal transition frequency of 180MHz.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816S-TL-H by Onsemi

2SD1816S-TL-H

Onsemi

Onsemi's 2SD1816S-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. This small outline package has a transition frequency of 180MHz, making it suitable for high-speed switching circuits.

COLLECTOR

4 A

100 V

SINGLE

140

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

180 MHz

2SD1816T-E by Onsemi

2SD1816T-E

Onsemi

2SD1816T-E by Onsemi is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its single configuration and high transition frequency of 180MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.

COLLECTOR

4 A

100 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816T-H by Onsemi

2SD1816T-H

Onsemi

Onsemi's 2SD1816T-H is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 180MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.

COLLECTOR

4 A

100 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816T-TL-H by Onsemi

2SD1816T-TL-H

Onsemi

Onsemi's 2SD1816T-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature. Its small outline package and high transition frequency of 180MHz make it suitable for compact electronic designs requiring fast signal processing.

COLLECTOR

4 A

100 V

SINGLE

200

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

GULL WING

SINGLE

30

SWITCHING

SILICON

180 MHz

DNLS412E-13 by Diodes Incorporated

DNLS412E-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

12 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DZT955-13 by Diodes Incorporated

DZT955-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

140 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

2SD1223(TE16L1,NQ) by Toshiba

2SD1223(TE16L1,NQ)

Toshiba

Toshiba's 2SD1223 NPN BJT features a min hFE of 1000, max VCE of 80V, and max IC of 4A. Ideal for switching applications, this Darlington transistor with built-in diode and resistor comes in a small outline package with gull wing terminals.

COLLECTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

R-PSSO-G2

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

SINGLE

SWITCHING

SILICON

PBSS5480XZ by Nexperia

PBSS5480XZ

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 80 V;

COLLECTOR

4 A

80 V

SINGLE

200

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

125 MHz