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.15 A Small Signal Bipolar Junction Transistors (BJT) 41

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT560QTC by Diodes Incorporated

FMMT560QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

HIGH RELIABILITY

.15 A

500 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

60 MHz

2SA608NF-NPA-AT by Onsemi

2SA608NF-NPA-AT

Onsemi

The Onsemi 2SA608NF-NPA-AT is a PNP BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and max IC of 0.15A. Packaged in cylindrical shape with through-hole terminals for easy installation.

.15 A

50 V

SINGLE

160

TO-226AA

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

NO

Tin (Sn)

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

200 MHz

2SC536NF-NPA-AT by Onsemi

2SC536NF-NPA-AT

Onsemi

2SC536NF-NPA-AT by Onsemi is a NPN BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Packaged in a cylindrical shape with through-hole terminals for easy installation.

.15 A

50 V

SINGLE

160

TO-226AA

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

NO

Tin (Sn)

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

200 MHz

NTE103 by Nte Electronics

NTE103

Nte Electronics

NTE103 by Nte Electronics is a NPN BJT transistor with max. power dissipation of 0.15W, hFE of 24, and VCE of 16V. Ideal for switching applications due to its Germanium element material and max. collector current of 0.15A in a cylindrical package shape with wire terminals.

.15 A

16 V

SINGLE

24

TO-5

O-MBCY-W3

1

3

METAL

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.15 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

GERMANIUM

2 MHz

IMX2T108 by ROHM

IMX2T108

ROHM

ROHM's IMX2T108 is a NPN BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and Pdiss of 0.3W, it's suitable for small outline packages in surface mount designs.

.15 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

180 MHz

.4 V

IMX3T108 by ROHM

IMX3T108

ROHM

ROHM's IMX3T108 is a NPN BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and IC of 0.15A, it's suitable for small outline packages in surface mount configurations.

.15 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

180 MHz

.4 V

UMX2NTR by ROHM

UMX2NTR

ROHM

ROHM UMX2NTR is a NPN BJT with 2 elements, ideal for amplifier applications. It has a VCEsat of 0.4V and hFE of 120. With a max operating temp of 150°C, it offers a transition frequency of 180MHz in a small outline package.

.15 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

180 MHz

.4 V

2SD2226KT146W by ROHM

2SD2226KT146W

ROHM

ROHM 2SD2226KT146W is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.15A. It has a min. DC current gain of 1200, suitable for small signal applications in electronics due to its high transition frequency of 250MHz. The Gull Wing terminal form and small outline package make it ideal for surface mount designs requiring compact components.

.15 A

50 V

SINGLE

1200

R-PDSO-G3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

SILICON

250 MHz

2PA1774R,135 by NXP Semiconductors

2PA1774R,135

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PC4617R,135 by NXP Semiconductors

2PC4617R,135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PA1015GR,126 by NXP Semiconductors

2PA1015GR,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

.15 A

7 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

2PA1774R,115 by NXP Semiconductors

2PA1774R,115

NXP Semiconductors

NXP Semiconductors' 2PA1774R,115 is a PNP BJT transistor with hFE of 180. It has a max voltage of 50V and max current of 0.15A, ideal for switching applications. With a transition frequency of 100MHz and operating temp up to 150°C, it's suitable for small outline packages in surface mount configurations.

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PA1774S,115 by NXP Semiconductors

2PA1774S,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PC1815BL,126 by NXP Semiconductors

2PC1815BL,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

.3 V

2PC1815GR,126 by NXP Semiconductors

2PC1815GR,126

NXP Semiconductors

The NXP Semiconductors 2PC1815GR,126 is a NPN BJT transistor with max VCEsat of 0.3V and max IC of 0.15A. Ideal for amplifier applications, it has a min hFE of 25 and operates up to 150°C. With a cylindrical package style, it features 3 terminals in a through-hole configuration.

.15 A

3.5 pF

50 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

.3 V

2PC1815GR,412 by NXP Semiconductors

2PC1815GR,412

NXP Semiconductors

NXP Semiconductors' 2PC1815GR,412 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. The package is cylindrical with matte tin finish, suitable for through-hole mounting.

.15 A

3.5 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

2PC1815Y,126 by NXP Semiconductors

2PC1815Y,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

.3 V

2PC1815Y,412 by NXP Semiconductors

2PC1815Y,412

NXP Semiconductors

The NXP Semiconductors 2PC1815Y,412 is a NPN BJT transistor with max VCEsat of 0.3V and hFE of 120. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. With a cylindrical package style, it features 3 terminals and collector-emitter voltage of 50V.

.15 A

3.5 pF

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

2PC4617Q,115 by NXP Semiconductors

2PC4617Q,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

120

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PC4617R,115 by NXP Semiconductors

2PC4617R,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PC4617S,115 by NXP Semiconductors

2PC4617S,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 270;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

2PC1815GR,116 by NXP Semiconductors

2PC1815GR,116

NXP Semiconductors

NXP Semiconductors' 2PC1815GR,116 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max operating temp of 150°C and fT of 80MHz. The package is cylindrical with through-hole terminals, making it suitable for various electronic circuits.

.15 A

3.5 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

2SC1815-GR-AP by Micro Commercial Components

2SC1815-GR-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-GR-AP is a NPN BJT transistor with hFE of 120, ideal for amplifier applications. With a max VCE of 50V and IC of 0.15A, it operates up to 125°C. Featuring a fT of 80MHz, this through-hole transistor has a cylindrical package body suitable for various electronic designs.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-AP by Micro Commercial Components

2SC1815-Y-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-AP is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. Package style is cylindrical with matte tin finish in a plastic/epoxy body.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-BP by Micro Commercial Components

2SC1815-Y-BP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-BP is a NPN BJT with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. The transistor's cylindrical package with matte tin finish makes it suitable for through-hole mounting.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2DA1774Q-7 by Diodes Incorporated

2DA1774Q-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

120

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

2DA1774R-7 by Diodes Incorporated

2DA1774R-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

2DA1774S-7 by Diodes Incorporated

2DA1774S-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

NSTB60BDW1T1 by Onsemi

NSTB60BDW1T1

Onsemi

NSTB60BDW1T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.15A, and transition frequency of 140MHz. Ideal for applications requiring high DC current gain and low power dissipation in compact designs.

BUILT IN BIAS RESISTOR RATIO IS 2.13

.15 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN AND PNP

.25 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

30

SILICON

140 MHz

2DC4617R-7 by Diodes Incorporated

2DC4617R-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

180 MHz

2DC4617S-7 by Diodes Incorporated

2DC4617S-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

180 MHz

KSA733CLTA by Fairchild Semiconductor

KSA733CLTA

Fairchild Semiconductor

KSA733CLTA by Fairchild Semiconductor is a PNP small signal bipolar junction transistor (BJT) with a max power dissipation of 0.25W and a min DC current gain of 350. It is commonly used as an amplifier in various applications due to its high transition frequency of 180MHz and max collector-emitter voltage of 50V.

.15 A

50 V

SINGLE

350

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

180 MHz

KSC1815GRTA by Fairchild Semiconductor

KSC1815GRTA

Fairchild Semiconductor

KSC1815GRTA by Fairchild Semiconductor is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 0.15A. It is commonly used in amplifier applications due to its high transition frequency of 80MHz and cylindrical package style for through-hole mounting.

.15 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

2DA1774S-7-F by Diodes Incorporated

2DA1774S-7-F

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

140 MHz

2SC3624-T1B-A by Renesas Electronics

2SC3624-T1B-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .15 A; No. of Elements: 1;

.15 A

50 V

SINGLE

200

R-PDSO-G3

e6

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN BISMUTH

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

2SA1162S-GR,LF(D by Toshiba

2SA1162S-GR,LF(D

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; Additional Features: LOW NOISE;

LOW NOISE

.15 A

50 V

SINGLE

200

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

2SA1162S-Y,LF(D by Toshiba

2SA1162S-Y,LF(D

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; No. of Terminals: 3;

LOW NOISE

.15 A

50 V

SINGLE

120

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

NXP3875G,215 by Nexperia

NXP3875G,215

Nexperia

NXP3875G,215 by Nexperia is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 0.15A. It is used for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 80MHz.

.15 A

50 V

SINGLE

200

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

80 MHz

HN2C01FU-GR(T5L,F) by Toshiba

HN2C01FU-GR(T5L,F)

Toshiba

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

.25 V

HN2C01FU-Y(TE85L,F by Toshiba

HN2C01FU-Y(TE85L,F

Toshiba

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

2

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

.25 V

2SA1774E3HZGTLQ by ROHM

2SA1774E3HZGTLQ

ROHM

ROHM 2SA1774E3HZGTLQ is a PNP BJT transistor with VCEsat of 0.5V, hFE of 120, and fT of 140MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 50V. AEC-Q101 compliant, suitable for automotive electronics requiring high reliability.

.15 A

5 pF

50 V

SINGLE

120

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

AEC-Q101

YES

GULL WING

DUAL

30

AMPLIFIER

SILICON

140 MHz

.5 V