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Infineon Technologies RF Small Signal Bipolar Junction Transistors (BJT) 38

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFP720F-E6327 by Infineon Technologies

BFP720F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .08 W; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON GERMANIUM; No. of Elements: 1;

.02 A

160

1

1

260

NPN

.08 W

BIP RF Small Signal

YES

SILICON GERMANIUM

BFP740F-E6327 by Infineon Technologies

BFP740F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

.045 A

.14 pF

4 V

SINGLE

160

X BAND

R-PDSO-F4

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.16 W

12.5 dB

Other Transistors

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

42000 MHz

BFP540ESDE6327HTSA1 by Infineon Technologies

BFP540ESDE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 34000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY, LOW NOISE

EMITTER

.08 A

.24 pF

4 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

34000 MHz

BF517E6327HTSA1 by Infineon Technologies

BF517E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .025 A;

.025 A

.75 pF

15 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.28 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

2000 MHz

BF799E6327HTSA1 by Infineon Technologies

BF799E6327HTSA1

Infineon Technologies

BF799E6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in the ultra high frequency band at 1100 MHz, suitable for switching applications. With a max power dissipation of 0.28 W and a collector-emitter voltage of 20 V, it is designed for small outline surface mount packages.

.035 A

20 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.28 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

1100 MHz

BFP193WE6327HTSA1 by Infineon Technologies

BFP193WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Highest Frequency Band: L BAND;

COLLECTOR

.08 A

.9 pF

12 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

8000 MHz

BFP196WE6327HTSA1 by Infineon Technologies

BFP196WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 4;

COLLECTOR

.1 A

1.4 pF

12 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

7500 MHz

BFS17WE6327HTSA1 by Infineon Technologies

BFS17WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;

.025 A

.8 pF

15 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

2500 MHz

BFP405FH6327XTSA1 by Infineon Technologies

BFP405FH6327XTSA1

Infineon Technologies

BFP405FH6327XTSA1 by Infineon Technologies is a NPN RF BJT with built-in diode, ideal for amplifier applications in L Band. Featuring 4 terminals, it has a max fT of 25 GHz and VCE of 4.5V. This small outline transistor has a collector current of 0.012A and low capacitance at 0.1pF, meeting AEC-Q101 standards.

HIGH RELIABILITY

.012 A

.1 pF

4.5 V

SINGLE WITH BUILT-IN DIODE

L BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

25000 MHz

BFP540FESDH6327XTSA1 by Infineon Technologies

BFP540FESDH6327XTSA1

Infineon Technologies

BFP540FESDH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.08A IC, and 30GHz fT. It is used in S Band amplifiers for high-frequency applications. The package is small outline, surface mountable with flat terminals, suitable for AEC-Q101 standards.

LOW NOISE

.08 A

.26 pF

4.5 V

SINGLE

S BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

30000 MHz

BFP620FH7764XTSA1 by Infineon Technologies

BFP620FH7764XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; No. of Terminals: 4;

LOW NOISE, HIGH RELIABILITY

.08 A

.2 pF

2.3 V

SINGLE

C BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM

65000 MHz

BFR183WH6327XTSA1 by Infineon Technologies

BFR183WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .065 A; Terminal Position: DUAL;

LOW NOISE

.065 A

.7 pF

12 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

8000 MHz

BFR340FH6327XTSA1 by Infineon Technologies

BFR340FH6327XTSA1

Infineon Technologies

The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.

LOW NOISE

.02 A

.4 pF

6 V

SINGLE

S BAND

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

14000 MHz

BGR420H6327XTSA1 by Infineon Technologies

BGR420H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;

SINGLE

L BAND

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BF799WH6327XTSA1 by Infineon Technologies

BF799WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): .035 A; Moisture Sensitivity Level (MSL): 1;

.035 A

20 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

1100 MHz

BFP640FESDH6327XTSA1 by Infineon Technologies

BFP640FESDH6327XTSA1

Infineon Technologies

BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.

.05 A

4.1 V

SINGLE

X BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

46000 MHz

BFR720L3RHE6327XTSA1 by Infineon Technologies

BFR720L3RHE6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .02 A; Package Shape: RECTANGULAR;

LOW NOISE

EMITTER

.02 A

4 V

SINGLE

X BAND

R-XBCC-N3

1

3

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NPN

YES

NO LEAD

BOTTOM

AMPLIFIER

SILICON GERMANIUM

45000 MHz

BFR92WH6327XTSA1 by Infineon Technologies

BFR92WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .045 A; Package Style (Meter): SMALL OUTLINE;

.045 A

.6 pF

15 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

5000 MHz

BFS17SH6327XTSA1 by Infineon Technologies

BFS17SH6327XTSA1

Infineon Technologies

The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.

.025 A

.8 pF

15 V

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

2500 MHz

BFS17WH6327XTSA1 by Infineon Technologies

BFS17WH6327XTSA1

Infineon Technologies

BFS17WH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a nominal transition frequency of 2500MHz. It is commonly used as an amplifier in applications requiring ultra high frequency band performance.

.025 A

.8 pF

15 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

2500 MHz

BFP650 by Infineon Technologies

BFP650

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 37000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

HIGH RELIABILITY, LOW NOISE

EMITTER

.15 A

.4 pF

4 V

SINGLE

100

C BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

37000 MHz

BFP620FE7764 by Infineon Technologies

BFP620FE7764

Infineon Technologies

BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.

LOW NOISE, HIGH RELIABILITY

.08 A

.2 pF

2.3 V

SINGLE

C BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

DUAL

SILICON GERMANIUM

65000 MHz

BFP540H6327XTSA1 by Infineon Technologies

BFP540H6327XTSA1

Infineon Technologies

BFP540H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 30 GHz. It has a collector-emitter voltage of 4.5V and collector current of 0.08A, making it suitable for L Band amplifier applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH RELIABILITY

EMITTER

.08 A

.24 pF

4.5 V

SINGLE

L BAND

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

30000 MHz

BFP640F-E6327 by Infineon Technologies

BFP640F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

.05 A

SINGLE

110

1

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

30000 MHz

BFP450H6433XTMA1 by Infineon Technologies

BFP450H6433XTMA1

Infineon Technologies

BFP450H6433XTMA1 by Infineon is a NPN RF BJT with 4V VCEO, 0.15A IC, and 42000MHz fT. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier designs. AEC-Q101 compliant, it features silicon germanium carbon element material and low collector-base capacitance of 0.4pF.

LOW NOISE

.15 A

.4 pF

4 V

SINGLE

X BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

42000 MHz

BFP460H6433XTMA1 by Infineon Technologies

BFP460H6433XTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .07 A; Peak Reflow Temperature (C): NOT SPECIFIED;

LOW NOISE

.07 A

.45 pF

4.5 V

SINGLE

S BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

22000 MHz

BFP650E6327HTSA1 by Infineon Technologies

BFP650E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 37000 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Base Capacitance: .4 pF;

HIGH RELIABILITY, LOW NOISE

EMITTER

.15 A

.4 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

37000 MHz

BFP640FESDE6327 by Infineon Technologies

BFP640FESDE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: X BAND;

.05 A

4.1 V

SINGLE

X BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

46000 MHz

BFP640H6433 by Infineon Technologies

BFP640H6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40000 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;

LOW NOISE, HIGH RELIABILITY

.05 A

.2 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

40000 MHz

BFP650FE6327 by Infineon Technologies

BFP650FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Collector Current (IC): .15 A; Transistor Application: AMPLIFIER;

.15 A

4 V

SINGLE

L BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM

42000 MHz

BFP740FESDE6327 by Infineon Technologies

BFP740FESDE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 47000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

.045 A

.08 pF

4.2 V

SINGLE

160

X BAND

R-PDSO-F4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.16 W

12.5 dB

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

47000 MHz

BFP780H6327XTSA1 by Infineon Technologies

BFP780H6327XTSA1

Infineon Technologies

BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

EMITTER

.12 A

6.1 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

20000 MHz

BF886H6327XTSA1 by Infineon Technologies

BF886H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .025 A; Additional Features: LOW NOISE;

LOW NOISE

.025 A

4 V

SINGLE

L BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

45000 MHz

BF888H6327 by Infineon Technologies

BF888H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 47000 MHz; Maximum Collector Current (IC): .03 A; Case Connection: EMITTER;

LOW NOISE

EMITTER

.03 A

.14 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

47000 MHz

BFP420H6801 by Infineon Technologies

BFP420H6801

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Maximum Collector-Base Capacitance: .3 pF;

HIGH RELIABILITY, LOW NOISE

.035 A

.3 pF

4.5 V

SINGLE

X BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP420E6327BTSA1 by Infineon Technologies

BFP420E6327BTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP420E6433HTMA1 by Infineon Technologies

BFP420E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP740E6327HTSA1 by Infineon Technologies

BFP740E6327HTSA1

Infineon Technologies

BFP740E6327HTSA1 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for C band applications. It has a max operating temp of 150°C, fT of 44 GHz, and can handle up to 0.045 A collector current. This small outline transistor is designed for amplifier circuits requiring high frequency performance.

.045 A

.08 pF

4 V

SINGLE

160

C BAND

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.16 W

19.5 dB

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

44000 MHz