Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMP3017SFGQ-13
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: S-PDSO-N5; Case Connection: DRAIN; Terminal Finish: MATTE TIN;
GATE PROTECTED
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
11.5 A
.01 ohm
METAL-OXIDE SEMICONDUCTOR
294 pF
S-PDSO-N5
e3
1
5
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
P-CHANNEL
2.5 W
80 A
AEC-Q101
YES
MATTE TIN
NO LEAD
DUAL
SWITCHING
SILICON
DMP3017SFGQ-7
DMP3017SFGQ-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 0.01 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and AEC-Q101 reference standard, it's suitable for automotive electronics.
DMP6110SVT-13
DMP6110SVT-13 by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 18mJ EAS, and 0.105 ohm RDS(ON). With a small outline package and -55 to 150 °C operating range, it's suitable for various power management designs.
18 mJ
60 V
7.3 A
.105 ohm
44 pF
R-PDSO-G6
6
RECTANGULAR
1.8 W
24 A
GULL WING
DMT6009LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
40.8 mJ
11 A
41 pF
S-PDSO-N8
8
N-CHANNEL
19.2 W
90 A
MIL-STD-202
DMG4N60SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; JESD-30 Code: R-PSFM-T3; Maximum Drain-Source On Resistance: 2.5 ohm;
90 mJ
600 V
4.5 A
2.5 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
6 A
NO
THROUGH-HOLE
SINGLE
DMNH4006SPSQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
HIGH RELIABILITY
208 mJ
40 V
110 A
.007 ohm
R-PDSO-F5
180 A
FLAT
DMNH6008SCTQ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 200 A;
190 mJ
130 A
.008 ohm
200 A
DMNH6008SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Finish: MATTE TIN; Transistor Application: SWITCHING;
DMNH6021SPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
64 mJ
55 A
.028 ohm
88 A
DMNH6042SPD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
65 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5.7 A
.05 ohm
R-PDSO-F6
2
32 A
DMT3002LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
700 mJ
240 A
.0025 ohm
300 pF
R-PDSO-F8
136 W
400 A
DMTH10H030LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; No. of Elements: 1; No. of Terminals: 2;
85 mJ
100 V
28 A
.045 ohm
TO-252
R-PSSO-G2
50 A
DMTH4004LK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 200 A;
100 A
.005 ohm
DMTH4005SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220AB;
52.8 mJ
.0047 ohm
160 A
DMNH6012LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY; Package Style (Meter): SMALL OUTLINE;
100 mJ
60 A
.018 ohm
120 A
DMT3004LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
110 mJ
25 A
.0045 ohm
240 pF
42 W
95 A
DMT3004LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
DMT4005SCT
DMT4005SCT by Diodes Inc. is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 160A and EAS of 52.8mJ, making it suitable for high-power tasks in automotive (AEC-Q101) and industrial settings.
DMTH3004LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Drain-Source On Resistance: .0038 ohm;
22 A
.0038 ohm
DMTH4004SK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
160 mJ
.0032 ohm
DMN3008SFGQ-13
DMN3008SFGQ-13 by Diodes Incorporated is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. It features 80A IDM, 101mJ EAS, and 0.0055 ohm RDS(on). Operating in enhancement mode, it has a max temp of 150°C and -55°C min temp. AEC-Q101 compliant for automotive use.
101 mJ
17.6 A
.0055 ohm
459 pF
2.1 W
DMT6005LCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 130 A; Reference Standard: AEC-Q101; Terminal Position: SINGLE;
43.5 mJ
.006 ohm
DMNH3010LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Terminal Position: SINGLE;
75 mJ
15 A
.0095 ohm
DMNH6021SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 80 A; Peak Reflow Temperature (C): 260;
DMT3006LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 27.8 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
31 mJ
55.6 A
72 pF
27.8 W
30
DMT6015LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
14.5 mJ
9.5 A
.016 ohm
20 pF
S-PDSO-F8
30 W
DMT3006LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; No. of Elements: 1; Case Connection: DRAIN;
14.1 A
S-PDSO-N6
e4
NICKEL PALLADIUM GOLD
DMNH6008SPSQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Additional Features: HIGH RELIABILITY; Maximum Pulsed Drain Current (IDM): 140 A;
194 mJ
16.5 A
140 A
DMNH6021SPD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE;
8.2 A
.025 ohm
DMT10H010LCT
DMT10H010LCT by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 92A and 0.012 ohm RDS(ON), making it suitable for high-power ENHANCEMENT MODE operations in automotive systems. The package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology and SILICON element material.
15 mJ
62 A
.012 ohm
92 A
DMT3003LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Terminal Position: DUAL; Package Shape: SQUARE;
250 mJ
62 W
DMTH6005LCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .006 ohm; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
98 mJ
DMPH4015SPS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
260 mJ
12 A
.015 ohm
526 pF
175 Cel
2.6 W
DMT2004UFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Shape: SQUARE; JESD-609 Code: e3;
36 mJ
24 V
70 A
559 pF
2.3 W
DMN2022UNS-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel;
14.7 mJ
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
10.7 A
.017 ohm
160 pF
1.9 W
DMTH4004SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 40 V;
102 pF
180 W
DMTH6004SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 3;
200 mJ
.00365 ohm
105 pF
DMPH3010LPS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Terminal Form: FLAT; Terminal Position: DUAL;
113 mJ
647 pF
DMT6004SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 113 W; Terminal Finish: MATTE TIN; Avalanche Energy Rating (EAS): 200 mJ;
113 W
DMNH6042SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
5.3 A
24 pF
R-PDSO-G8
35 A
DMPH3010LPSQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Drain-Source On Resistance: .01 ohm; Terminal Finish: MATTE TIN;
AEC-Q101; MIL-STD-202
DMN3009SFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .0055 ohm;
55 mJ
16 A
248 pF
DMP2123LQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON; JESD-609 Code: e3;
3 A
.072 ohm
101 pF
R-PDSO-G3
DMN10H170SVTQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; JESD-30 Code: R-PDSO-G6; Transistor Element Material: SILICON;
2.6 A
.2 ohm
25 pF
1.7 W
11.2 A
DMP1081UCB4-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.59 W; Maximum Drain-Source On Resistance: .13 ohm; Peak Reflow Temperature (C): 260;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
12 V
.13 ohm
90 pF
S-PBGA-B4
e1
4
GRID ARRAY
1.59 W
20 A
TIN SILVER COPPER
BALL
BOTTOM
DMN3032LFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; No. of Terminals: 6; Minimum DS Breakdown Voltage: 30 V;
10 mJ
6.2 A
.03 ohm
DMJ70H900HJ3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; No. of Elements: 1; Terminal Finish: MATTE TIN;
50 mJ
700 V
7 A
.9 ohm
TO-251
R-PSIP-T3
IN-LINE
68 W
10 A
DMN90H2D2HCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
360 mJ
ISOLATED
900 V
2.2 ohm
40 W
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