Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMN3066LQ-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.33 W; No. of Elements: 1; Transistor Element Material: SILICON;
SINGLE WITH BUILT-IN DIODE
30 V
3.6 A
.098 ohm
METAL-OXIDE SEMICONDUCTOR
42 pF
R-PDSO-G3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
1.33 W
21 A
AEC-Q101; IATF 16949
YES
GULL WING
DUAL
SWITCHING
SILICON
DMN3066L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.33 W; No. of Elements: 1; Package Shape: RECTANGULAR;
e3
260
MATTE TIN
DMN3066L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.33 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 21 A;
DMT8008LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 95 A; Maximum Drain-Source On Resistance: .007 ohm;
26.5 mJ
DRAIN
80 V
95 A
.007 ohm
52 pF
TO-252
R-PSSO-G2
2
3 W
380 A
SINGLE
DMT15H017LPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Terminal Finish: MATTE TIN; Maximum Drain Current (ID): 58 A;
315.4 mJ
150 V
58 A
.0255 ohm
6.7 pF
R-PDSO-F8
8
89 W
230 A
FLAT
DMP26M1UFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Operating Temperature: 150 Cel; Terminal Form: NO LEAD;
71 mJ
20 V
71 A
.0055 ohm
564 pF
S-PDSO-N8
SQUARE
P-CHANNEL
110 A
NO LEAD
DMP3045LFVW-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Shape: SQUARE; Maximum Drain-Source On Resistance: .042 ohm;
30.8 mJ
19.9 A
.042 ohm
74 pF
S-PDSO-F8
2.1 W
76 A
DMP3045LFVW-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; JESD-30 Code: S-PDSO-F8; Package Shape: SQUARE;
DMP3045LFVWQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
DMT12H060LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Terminals: 6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
21.6 mJ
115 V
4.4 A
.065 ohm
7 pF
S-PDSO-N6
e4
6
2 W
20 A
MIL-STD-202
NICKEL PALLADIUM GOLD
DMP3045LVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G6;
30 mJ
5.4 A
79 pF
R-PDSO-G6
1.6 W
DMT10H032LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain-Source On Resistance: .032 ohm; Package Body Material: PLASTIC/EPOXY;
25.3 mJ
100 V
5 A
.032 ohm
6.9 pF
R-PDSO-G8
1.9 W
42 A
DMT64M1LCG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; No. of Elements: 1; Maximum Drain Current (ID): 67.8 A;
206 mJ
65 V
67.8 A
.0054 ohm
91 pF
2.6 W
260 A
30
DMT64M1LCG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V;
DMN2451UFDQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain-Source On Resistance: .8 ohm; Package Shape: SQUARE;
.96 A
.8 ohm
3.1 pF
S-PDSO-N3
1.1 W
3 A
AEC-Q101; IATF 16949; MIL-STD-202
DMN11M2UCA14-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; No. of Terminals: 14; Transistor Application: SWITCHING;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
12 V
25.5 A
.0034 ohm
304 pF
R-XBCC-N14
14
UNSPECIFIED
CHIP CARRIER
3.3 W
80 A
NICKEL GOLD
BOTTOM
DMN3003LCA8-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Reference Standard: MIL-STD-202; Package Style (Meter): CHIP CARRIER;
.0051 ohm
160 pF
R-XBCC-N8
2.5 W
DMN1019USNQ-13
DMN1019USNQ-13 by Diodes Inc. is a N-channel Power FET with 12V DS breakdown voltage, 70A IDM, and 0.01 ohm RDS(on). It's used for switching applications in automotive (AEC-Q101) and military (MIL-STD-202) sectors due to its high temp range (-55 to 150°C) and MOSFET technology.
HIGH RELIABILITY
9.3 A
.01 ohm
375 pF
70 A
AEC-Q101; MIL-STD-202
DMT15H035SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Terminal Finish: MATTE TIN; No. of Terminals: 3;
144.5 mJ
46 A
.035 ohm
4.2 pF
TO-220AB
R-PSFM-T3
FLANGE MOUNT
166 W
184 A
NO
THROUGH-HOLE
DMN4060SVTQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
18 mJ
45 V
4.3 A
.046 ohm
42.5 pF
1.7 W
23 A
DMN4060SVTQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Drain Current (ID): 4.3 A; Maximum Drain-Source On Resistance: .046 ohm;
DMP27M1UPSW-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.57 W; Transistor Application: SWITCHING; Maximum Feedback Capacitance (Crss): 518 pF;
54 mJ
84 A
518 pF
3.57 W
179 A
DMN2030UCA4-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; JESD-609 Code: e4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.05 ohm
54 pF
S-XBCC-N4
4
DMN2009UCA4-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 4;
.0226 ohm
107 pF
DMTH47M2LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Terminal Form: FLAT; Maximum Drain Current (ID): 49 A;
28.8 mJ
40 V
49 A
.0089 ohm
19.5 pF
175 Cel
37.5 W
196 A
DMTH47M2LFVWQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
DMTH47M2LFVW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Element Material: SILICON; Reference Standard: MIL-STD-202;
DMP2541UCP9-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; No. of Terminals: 9; Maximum Pulsed Drain Current (IDM): 35 A;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
25 V
3.8 A
.06 ohm
20 pF
S-XBCC-N9
e2
9
1.67 W
35 A
TIN SILVER
DMP2101UCP9-7
P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Package Style (Meter): CHIP CARRIER; JESD-609 Code: e2;
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
2.5 A
8.4 pF
1.47 W
22 A
DMN2055UQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
4.8 A
.038 ohm
37 pF
1.2 W
25 A
DMN2055UQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; No. of Terminals: 3; Terminal Position: DUAL;
DMP22D5UFB4-7B
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.18 W; Maximum Feedback Capacitance (Crss): 2.7 pF; Terminal Form: NO LEAD;
.4 A
1.9 ohm
2.7 pF
R-PBCC-N3
1.18 W
.8 A
DMP22D5UFB4-7R
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.18 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 20 V;
DMJ70H600HK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; No. of Terminals: 2; Maximum Drain Current (ID): 7.6 A;
97 mJ
700 V
7.6 A
.6 ohm
40 pF
90 W
30 A
DMT10H032LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Feedback Capacitance (Crss): 6.9 pF; JESD-30 Code: R-PSSO-G2;
26 A
104 A
DMC10H172SSD-13
DMC10H172SSD-13 by Diodes Inc. is a Power FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 100V DS breakdown voltage, 16A pulsed drain current, and 0.16 ohm max on-resistance. Suitable for small outline packages in MOSFET technology with -55 to 150°C operating range.
20 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
2 A
.16 ohm
N-CHANNEL AND P-CHANNEL
1.5 W
16 A
DMTH45M5SPSWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 72 W; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202; Maximum Drain Current (ID): 86 A;
20.6 mJ
86 A
21 pF
72 W
344 A
Matte Tin (Sn) - annealed
DMJ70H600HCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Drain-Source On Resistance: .6 ohm; Transistor Element Material: SILICON;
8.5 A
104 W
34 A
DMP26M1UPSW-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Drain Current (ID): 83 A; Reference Standard: MIL-STD-202;
57 mJ
83 A
.006 ohm
134 A
DMPH16M1UPSW-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.47 W; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3;
96 A
3.47 W
147 A
DMTH10H032SPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 175 Cel; Maximum Drain-Source On Resistance: .032 ohm;
6 pF
38 W
100 A
DMTH10H4M5LPSWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;
240 mJ
107 A
.0049 ohm
25.5 pF
136 W
428 A
DMTH10H4M5LPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 8; Terminal Position: DUAL;
DMN24H3D6S-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.06 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
240 V
.45 A
3.5 ohm
8 pF
1.06 W
Matte Tin (Sn)
DMN24H3D6S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.06 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
DMTH10H025LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
96 mJ
45 A
.023 ohm
79 W
90 A
DMN3061SQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.23 W; Transistor Application: SWITCHING; Package Style (Meter): SMALL OUTLINE;
2.3 A
.059 ohm
31 pF
1.23 W
24 A
DMN3061SQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.23 W; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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