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Diodes Incorporated Power Field Effect Transistors (FET) 389

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMP2109UVTQ-13 by Diodes Incorporated

DMP2109UVTQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; No. of Elements: 1; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202;

SINGLE WITH BUILT-IN DIODE

20 V

3.1 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-G6

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.2 W

20 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON

DMP2109UVTQ-7 by Diodes Incorporated

DMP2109UVTQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;

SINGLE WITH BUILT-IN DIODE

20 V

3.1 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-G6

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.2 W

20 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON

DMTH6010LPDWQ-13 by Diodes Incorporated

DMTH6010LPDWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Application: SWITCHING; No. of Elements: 2;

20 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

47.6 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

58 pF

R-PDSO-F8

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

37.5 W

90 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

FLAT

DUAL

SWITCHING

SILICON

DMTH6010LPDW-13 by Diodes Incorporated

DMTH6010LPDW-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 60 V;

20 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

47.6 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

58 pF

R-PDSO-F8

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

37.5 W

90 A

MIL-STD-202

YES

FLAT

DUAL

SWITCHING

SILICON

DMWS120H100SM4 by Diodes Incorporated

DMWS120H100SM4

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Feedback Capacitance (Crss): 4.16 pF; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

1200 V

37.2 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

4.16 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

208 W

87 A

MIL-STD-202

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE