Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMNH45M7SCT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 240 W; Terminal Form: THROUGH-HOLE; Minimum Operating Temperature: -55 Cel;
92 mJ
SINGLE WITH BUILT-IN DIODE
40 V
220 A
.006 ohm
METAL-OXIDE SEMICONDUCTOR
272 pF
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
240 W
200 A
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
DMP2075UVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Maximum Feedback Capacitance (Crss): 87 pF;
20 V
3.8 A
.075 ohm
87 pF
R-PDSO-G6
6
150 Cel
SMALL OUTLINE
P-CHANNEL
1.6 W
25 A
MIL-STD-202
YES
GULL WING
DUAL
30
DMPH4023SK3Q-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
HIGH RELIABILITY
85 mJ
DRAIN
50 A
.026 ohm
111 pF
TO-252
R-PSSO-G2
2
3.6 W
70 A
AEC-Q101
DMT3006LPB-13
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: FLAT;
28 mJ
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
.0111 ohm
72 pF
R-PDSO-F8
8
30 W
100 A
FLAT
DMT31M7LPS-13
DMT31M7LPS-13 by Diodes Incorporated is a N-channel Power FET with 30V DS breakdown voltage and 100A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operating in enhancement mode. With a max power dissipation of 113W and an avalanche energy rating of 215mJ, this MOSFET can handle high-power requirements efficiently.
215 mJ
.0024 ohm
424 pF
R-PDSO-F5
5
113 W
400 A
DMT6005LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Maximum Drain-Source On Resistance: .007 ohm; Package Body Material: PLASTIC/EPOXY;
171 mJ
60 V
.007 ohm
69 pF
S-PDSO-N8
SQUARE
62.5 W
NO LEAD
DMT615MLFV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34.72 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 5;
ESD PROTECTED
18.05 mJ
38 A
.016 ohm
34.72 W
60 A
DMTH3004LFGQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Terminal Finish: MATTE TIN; Minimum Operating Temperature: -55 Cel;
110 mJ
75 A
.0055 ohm
240 pF
50 W
250 A
AEC-Q101; MIL-STD-202
DMTH6016LFDFWQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;
11.7 mJ
9.4 A
.018 ohm
25.4 pF
S-PDSO-N6
2.3 W
AEC-Q101; IATF 16949; MIL-STD-202
DMTH6016LFVW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.38 W; Package Shape: SQUARE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
12.8 mJ
41 A
23.4 pF
S-PDSO-F8
2.38 W
160 A
DMN2024UDH-7
DMN2024UDH-7 by Diodes Inc. is an N-channel FET with 20V DS breakdown voltage, 45A IDM, and 0.023 ohm RDS(on). Commonly used for switching applications in a small outline package with 8 terminals. Operating range from -55 to 150 °C, MIL-STD-202 compliant.
8 mJ
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
5.2 A
.023 ohm
38 pF
e4
1.76 W
45 A
NICKEL PALLADIUM GOLD
DMN2005UFGQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.27 W; Additional Features: HIGH RELIABILITY; Terminal Finish: MATTE TIN;
58.4 mJ
18 A
.0087 ohm
477 pF
2.27 W
130 A
DMN2005UFGQ-7
DMN2005UFGQ-7 by Diodes Inc. is a N-channel Power FET with 20V DS breakdown voltage, ideal for switching applications. It features a max IDM of 130A and EAS of 58.4mJ, operating in enhancement mode with -55 to 150°C temperature range.
DMPH4029LFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;
32 mJ
8 A
.045 ohm
107 pF
2.8 W
88 A
DMPH4029LFG-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;
DMT68M8LFV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41.7 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 8;
39 mJ
54.1 A
.0095 ohm
44 pF
41.7 W
210 A
DMN2024UVT-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .024 ohm; Transistor Application: SWITCHING;
COMMON DRAIN, 2 ELEMENTS
7 A
.024 ohm
35 A
DMN2024UVT-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
DMT3003LFGQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Maximum Time At Peak Reflow Temperature (s): 30; Case Connection: DRAIN;
250 mJ
.0032 ohm
62 W
DMT3003LFGQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Transistor Element Material: SILICON; No. of Terminals: 8;
DMTH43M8LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65.2 W; Maximum Drain Current (ID): 100 A; Terminal Finish: MATTE TIN;
165 mJ
.003 ohm
88 pF
65.2 W
DMP1008UCA9-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
8 V
16 A
.0091 ohm
164 pF
S-PBGA-B9
9
GRID ARRAY
2.2 W
80 A
COPPER NICKEL GOLD
BALL
BOTTOM
DMP2067LVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
4.2 A
30 A
DMT616MLSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.06 W; Maximum Drain Current (ID): 10 A; Maximum Operating Temperature: 150 Cel;
12.3 mJ
10 A
.014 ohm
27 pF
R-PDSO-G8
2.06 W
DMNH6065SPDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; JESD-30 Code: R-PDSO-F8; Transistor Element Material: SILICON;
89 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
27 A
.065 ohm
9.9 pF
2.4 W
68 W
108 A
DMT10H009LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Peak Reflow Temperature (C): 260; Avalanche Energy Rating (EAS): 144.5 mJ;
144.5 mJ
100 V
13 A
.0085 ohm
16 pF
DMT10H009LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .0085 ohm; Minimum Operating Temperature: -55 Cel;
DMT4001LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 113.6 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: FLAT;
460 mJ
.0016 ohm
113.6 W
DMT47M2LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14.8 W; Maximum Drain-Source On Resistance: .0108 ohm; Transistor Element Material: SILICON;
24.4 mJ
30.2 A
.0108 ohm
14.8 pF
14.8 W
120 A
DMT47M2SFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 27.1 W; Maximum Drain Current (ID): 49.1 A; Terminal Form: FLAT;
30.5 mJ
49.1 A
.0075 ohm
12.4 pF
27.1 W
196 A
DMT6006SPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89.3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 390 A;
87.9 mJ
98 A
.0062 ohm
89.3 W
390 A
DMTH10H4M5LPS-13
DMTH10H4M5LPS-13 by Diodes Inc. is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 400A and an avalanche energy rating of 240mJ, operating in enhancement mode. This small outline package FET has a max power dissipation of 136W and can withstand temperatures up to 175°C.
240 mJ
.043 ohm
25.5 pF
136 W
DMC3061SVT-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Terminal Form: GULL WING; No. of Terminals: 6;
3.4 A
.06 ohm
29 pF
N-CHANNEL AND P-CHANNEL
1.08 W
20 A
DMC3061SVT-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; JESD-30 Code: R-PDSO-G6; Terminal Position: DUAL;
DMT4011LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.02 W; Avalanche Energy Rating (EAS): 19.8 mJ; JESD-609 Code: e3;
19.8 mJ
10.8 A
.0176 ohm
24.6 pF
2.02 W
DMJ65H650SCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Maximum Drain Current (ID): 10 A; No. of Elements: 1;
67.5 mJ
ISOLATED
650 V
.6 ohm
31 W
DMT6009LJ3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 60 V;
39.8 mJ
74.5 A
.01 ohm
41 pF
TO-251
R-PSIP-T3
IN-LINE
2.9 W
83.3 W
280 A
DMTH6005LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 69 pF;
.0041 ohm
75 W
DMTH69M8LFVW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Case Connection: DRAIN; Minimum Operating Temperature: -55 Cel;
45 mJ
45.4 A
15.9 A
S-PDSO-F5
29.4 W
180 A
DMT10H025LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.9 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
11.5 mJ
7.1 A
.025 ohm
13 pF
12.9 W
DMTH4001SPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 187.5 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
440 mJ
.001 ohm
203 pF
3.09 W
187.5 W
DMT3006LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Drain Current (ID): 25 A; Moisture Sensitivity Level (MSL): 1;
58 mJ
S-PDSO-F6
1.8 W
90 A
DMT3006LDV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Avalanche Energy Rating (EAS): 58 mJ;
DMT4003SCT
DMT4003SCT by Diodes Inc. is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 350A and an avalanche energy rating of 215mJ. With a max power dissipation of 156W, this MOSFET operates in enhancement mode from -55 to 150°C.
205 A
21.4 pF
156 W
350 A
DMTH6016LFDFW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -55 Cel;
DMNH6011LK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Pulsed Drain Current (IDM): 180 A; Terminal Form: GULL WING;
147 mJ
55 V
127 pF
3 W
Matte Tin (Sn)
DMNH6011LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Operating Temperature: 175 Cel; Maximum Feedback Capacitance (Crss): 127 pF;
DMT3020LDT-7
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.95 W; Maximum Feedback Capacitance (Crss): 27 pF; Maximum Time At Peak Reflow Temperature (s): 30;
6.5 mJ
DRAIN SOURCE
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
8.5 A
.02 ohm
1.95 W
55 A
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