Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
DMC3036LSD-13
Diodes Incorporated
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR;
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
6.9 A
.036 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e3
1
2
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL AND P-CHANNEL
2.5 W
24 A
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
SWITCHING
SILICON
DMP3035LSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;
SINGLE WITH BUILT-IN DIODE
12 A
.016 ohm
P-CHANNEL
40 A
DMP3100L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
LOW THRESHOLD, HIGH RELIABILITY
2.7 A
.1 ohm
R-PDSO-G3
3
1.08 W
8 A
30
DMP3120L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3;
2.8 A
.12 ohm
1.4 W
9 A
DMN2040LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
20 V
7 A
.026 ohm
N-CHANNEL
2 W
30 A
FET General Purpose Power
DMN3031LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Transistor Application: SWITCHING;
.0185 ohm
DMN3050S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
5.2 A
.035 ohm
20 A
DMS2120LFWB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 1; JESD-609 Code: e4;
DRAIN
2.9 A
.095 ohm
R-PDSO-N8
e4
1.5 W
10 A
NICKEL PALLADIUM GOLD
NO LEAD
DMN3112SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 30 V; Maximum Pulsed Drain Current (IDM): 24 A;
6 A
.057 ohm
DMG4435SSS-13
DMG4435SSS-13 by Diodes Incorporated is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 0.016 ohm RDS(on), and operates in ENHANCEMENT MODE. With a max temp of 150°C, this transistor is surface mountable and has a small outline package style.
7.3 A
1.3 W
80 A
DMG4710SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain-Source On Resistance: .0125 ohm; Maximum Drain Current (Abs) (ID): 12.7 A;
12.7 A
8.8 A
.0125 ohm
90 A
FET General Purpose Powers
DMG4712SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.55 W; Maximum Drain-Source On Resistance: .014 ohm; No. of Terminals: 8;
11.2 A
.014 ohm
1.55 W
63 A
DMG8880LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.43 W; Minimum DS Breakdown Voltage: 30 V; Maximum Pulsed Drain Current (IDM): 80 A;
11.6 A
.01 ohm
1.43 W
DMG4932LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.19 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
9.5 A
.015 ohm
1.19 W
DMG4812SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Minimum DS Breakdown Voltage: 30 V; Terminal Position: DUAL;
1.54 W
45 A
DMG8880LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
16.5 A
11 A
.0093 ohm
TO-252
R-PSSO-G2
4.1 W
48 A
SINGLE
DMN3005LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Maximum Drain Current (ID): 14.5 A; Maximum Operating Temperature: 150 Cel;
22 A
14.5 A
.0065 ohm
DMN2040UVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Elements: 1; Terminal Form: GULL WING;
6.7 A
.024 ohm
83 pF
R-PDSO-G6
6
-55 Cel
1.6 W
MIL-STD-202
DMP2075UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
3.8 A
.075 ohm
87 pF
25 A
DMT2004UFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 24 V;
36 mJ
24 V
70 A
559 pF
S-PDSO-F8
SQUARE
2.3 W
FLAT
DMT3009LFVWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .011 ohm;
19 mJ
.011 ohm
52 pF
35.7 W
AEC-Q101; MIL-STD-202
DMT6005LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Reference Standard: MIL-STD-202; JESD-609 Code: e3;
171 mJ
60 V
100 A
.007 ohm
69 pF
S-PDSO-N8
62.5 W
400 A
DMT615MLFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34.72 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;
ESD PROTECTED
18.05 mJ
38 A
R-PDSO-F5
5
34.72 W
60 A
DMTH3004LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Terminal Finish: MATTE TIN; Terminal Position: DUAL;
110 mJ
15 A
.0055 ohm
240 pF
175 Cel
50 W
250 A
DMTH3004LFGQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Peak Reflow Temperature (C): 260; Maximum Pulsed Drain Current (IDM): 250 A;
75 A
DMTH6016LFDFWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
11.7 mJ
9.4 A
.018 ohm
25.4 pF
S-PDSO-N6
AEC-Q101; IATF 16949; MIL-STD-202
DMTH6016LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.38 W; Package Shape: SQUARE; Maximum Drain Current (ID): 41 A;
12.8 mJ
41 A
23.4 pF
2.38 W
160 A
DMT68M8LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41.7 W; Terminal Form: FLAT; Terminal Position: DUAL;
39 mJ
54.1 A
.0095 ohm
44 pF
41.7 W
210 A
DMT6017LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.76 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 50 A;
18 mJ
65 V
8.1 A
29 pF
1.76 W
50 A
DMTH6005LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Minimum Operating Temperature: -55 Cel; Transistor Application: SWITCHING;
.0041 ohm
75 W
DMTH69M8LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 180 A;
45 mJ
45.4 A
15.9 A
41 pF
S-PDSO-F5
29.4 W
180 A
DMN2041UVT-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.44 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
5.8 A
.028 ohm
79 pF
1.44 W
36 A
DMN22M5UFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: S-PDSO-N5; Package Body Material: PLASTIC/EPOXY;
175 mJ
27 A
.0025 ohm
538 pF
S-PDSO-N5
2.2 W
500 A
DMP2110UVTQ-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.01 W; Maximum Feedback Capacitance (Crss): 47 pF; Transistor Application: SWITCHING;
1.8 A
.15 ohm
47 pF
1.01 W
DMT10H072LFDFQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JESD-30 Code: S-PDSO-N6; Terminal Finish: NICKEL PALLADIUM GOLD;
1.8 mJ
100 V
4 A
.062 ohm
2.5 pF
1.8 W
ZXMP7A17GQTC
ZXMP7A17GQTC by Diodes Inc. is a P-CHANNEL FET with 70V DS Breakdown Voltage, 9.6A IDM, and 0.16 ohm RDS(ON). Ideal for SWITCHING applications in automotive (AEC-Q101) due to ENHANCEMENT MODE operation and DUAL terminal position.
70 V
2.6 A
.16 ohm
R-PDSO-G4
4
9.6 A
AEC-Q101
DMN10H170SVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
.2 ohm
25 pF
1.7 W
DMN3016LDN-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Form: NO LEAD; Maximum Pulsed Drain Current (IDM): 45 A;
24 mJ
.02 ohm
82 pF
DMP2023UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 1;
27 mJ
7.6 A
.027 ohm
115 pF
2.03 W
DMT3008LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 3.2 mJ;
3.2 mJ
10.4 A
53 pF
2.1 W
DMT3008LFDF-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
DMN1019UVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G6;
4.7 mJ
12 V
10.7 A
DMN10H220LVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; Maximum Drain Current (ID): 1.87 A; Package Shape: RECTANGULAR;
1.87 A
.22 ohm
17 pF
1.67 W
6.6 A
ZXMS6002GQTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1; Terminal Form: GULL WING;
550 mJ
1.4 A
.675 ohm
ZXMS6006DGQTA
ZXMS6006DGQTA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 13A IDM, and 0.125 ohm Drain-Source Resistance. Ideal for automotive electronics due to AEC-Q101 standard compliance and high temperature range of -40 to 150 °C.
490 mJ
COMPLEX
.125 ohm
-40 Cel
13 A
DMP26M7UFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-30 Code: S-PDSO-F5; Minimum Operating Temperature: -55 Cel;
28 mJ
18 A
.0067 ohm
728 pF
DMN3033LSNQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: MATTE TIN;
.03 ohm
108 pF
DMNH4011SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Feedback Capacitance (Crss): 108 pF;
40 V
120 A
© 2023 All rights reserved
