Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMTH6012LPSW-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Avalanche Energy Rating (EAS): 7.9 mJ; Terminal Finish: MATTE TIN;
7.9 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
11.5 A
.014 ohm
METAL-OXIDE SEMICONDUCTOR
27 pF
R-PDSO-F8
e3
1
8
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
53.6 W
200 A
MIL-STD-202
YES
MATTE TIN
FLAT
DUAL
30
SWITCHING
SILICON
DMT3009UFVW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
18 mJ
30 V
10.6 A
.011 ohm
76 pF
S-PDSO-F8
150 Cel
SQUARE
2.6 W
80 A
DMT3009UFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .011 ohm;
DMT10H4M5LPS-13
DMT10H4M5LPS-13 by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, 400A IDM, and 0.0043 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 113W.
240 mJ
100 V
100 A
.0043 ohm
25.5 pF
R-PDSO-F5
5
113 W
400 A
DMT10H032LFVW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 100 V;
25.3 mJ
17 A
.032 ohm
6.9 pF
2.5 W
68 A
DMT10H032LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Avalanche Energy Rating (EAS): 25.3 mJ; JESD-609 Code: e3;
DMT6015LPDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7.9 W; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
21.4 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
17.1 A
.018 ohm
30 pF
2
7.9 W
Matte Tin (Sn)
DMN15M5UCA6-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 90 A;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
12 V
.01 ohm
12 pF
R-XBCC-N6
e4
6
UNSPECIFIED
CHIP CARRIER
2 W
90 A
NICKEL PALLADIUM GOLD
NO LEAD
BOTTOM
DMC3061SVTQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; No. of Elements: 2; Maximum Drain Current (ID): 3.4 A;
3.4 A
.06 ohm
29 pF
R-PDSO-G6
N-CHANNEL AND P-CHANNEL
1.08 W
20 A
AEC-Q101; IATF 16949; MIL-STD-202
GULL WING
DMNH4004SPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Package Shape: RECTANGULAR; Minimum Operating Temperature: -55 Cel;
536 mJ
40 V
.006 ohm
171 pF
2.8 W
DMTH69M8LFVWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
HIGH RELIABILITY
45 mJ
15.9 A
.0095 ohm
41 pF
29.4 W
180 A
AEC-Q101; MIL-STD-202
DMN68M7SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Feedback Capacitance (Crss): 198 pF; Minimum DS Breakdown Voltage: 68 V;
183 mJ
68 V
.008 ohm
198 pF
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
125 W
NO
THROUGH-HOLE
SINGLE
DMTH8008SFGQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Pulsed Drain Current (IDM): 272 A; JESD-30 Code: S-PDSO-N8;
174.85 mJ
80 V
.007 ohm
45.8 pF
S-PDSO-N8
50 W
272 A
DMTH8008SFGQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202;
DMTH8008SFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Reference Standard: MIL-STD-202; Minimum DS Breakdown Voltage: 80 V;
DMTH8008SFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
DMT69M5LCG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.64 W; JESD-30 Code: S-PDSO-N8; Peak Reflow Temperature (C): 260;
37.5 mJ
52.1 A
.0083 ohm
52 pF
2.64 W
208 A
DMT10H032SFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Element Material: SILICON;
25.35 mJ
35 A
6 pF
140 A
DMJ70H1D3SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Feedback Capacitance (Crss): 2.8 pF; JESD-609 Code: e3;
29 mJ
700 V
4.7 A
1.4 ohm
2.8 pF
TO-252
R-PSSO-G2
57 W
5 A
DMT4015LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; Package Shape: SQUARE;
7.8 A
.02 ohm
50 A
DMT4015LDV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 2; Maximum Pulsed Drain Current (IDM): 50 A;
DMT67M8LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89.3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-252;
84.5 mJ
87 A
70 pF
89.3 W
345 A
IATF 16949; MIL-STD-202
DMT6006LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89.3 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
40.7 mJ
88 A
.0065 ohm
58 pF
350 A
DMT10H9M9SH3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 114 W; JESD-30 Code: R-PSIP-T3; Avalanche Energy Rating (EAS): 181.5 mJ;
181.5 mJ
84 A
.009 ohm
13 pF
TO-251
R-PSIP-T3
IN-LINE
114 W
336 A
DMP2067LSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; Maximum Pulsed Drain Current (IDM): 30 A; Transistor Element Material: SILICON;
17.5 mJ
20 V
12.9 A
.038 ohm
89 pF
R-PDSO-G8
P-CHANNEL
1.67 W
30 A
DMP10H088SPS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Pulsed Drain Current (IDM): 80 A; Package Style (Meter): SMALL OUTLINE;
52 mJ
.083 ohm
47 pF
70 W
DMT10H003SPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; No. of Elements: 1; Terminal Finish: MATTE TIN;
612 mJ
152 A
.003 ohm
34 pF
139 W
608 A
DMTH47M2LPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
24.4 mJ
73 A
.0073 ohm
14.8 pF
68 W
292 A
DMT64M8LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Pulsed Drain Current (IDM): 130 A; Transistor Application: SWITCHING;
111 mJ
13.6 A
.005 ohm
75 pF
2.2 W
130 A
DMNH15H110SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Terminal Form: GULL WING; No. of Terminals: 2;
121.5 mJ
150 V
18 A
.11 ohm
88 W
72 A
DMTH6002LPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 820 A;
662 mJ
205 A
.0033 ohm
179 pF
167 W
820 A
DMN3009LFVQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; Package Body Material: PLASTIC/EPOXY;
58 mJ
60 A
.0055 ohm
247 pF
DMTH8028LPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Operating Temperature: 175 Cel; Maximum Feedback Capacitance (Crss): 32 pF;
23.4 mJ
41.7 A
.025 ohm
32 pF
65 W
166.8 A
DMTH4014LPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46.9 W; Transistor Element Material: SILICON; Reference Standard: MIL-STD-202;
19.6 mJ
43.5 A
.0145 ohm
21 pF
46.9 W
170 A
DMTH4014LPSWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46.9 W; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;
DMTH4014SPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46.9 W; Maximum Feedback Capacitance (Crss): 15 pF; Case Connection: DRAIN;
19.4 mJ
.0148 ohm
15 pF
DMTH6015LDVW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Case Connection: DRAIN; Terminal Finish: MATTE TIN;
20.8 mJ
9.2 A
.0205 ohm
20.5 pF
3 W
98 A
DMTH6015LDVW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-30 Code: S-PDSO-F8; Minimum DS Breakdown Voltage: 60 V;
DMTH6015LDVWQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
DMTH4014LDVW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -55 Cel;
10.2 A
.015 ohm
110 A
DMTH4014LDVW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Peak Reflow Temperature (C): 260; Terminal Form: FLAT;
DMNH10H021SPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.4 W; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;
157 mJ
58 A
.028 ohm
91 pF
4.4 W
232 A
Matte Tin (Sn) - with Nickel (Ni) barrier
DMTH4014LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57.7 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
49.8 A
.0137 ohm
57.7 W
DMTH4014LFVW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57.7 W; Avalanche Energy Rating (EAS): 19.6 mJ; Minimum Operating Temperature: -55 Cel;
DMP3165LQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Pulsed Drain Current (IDM): 13 A; Minimum DS Breakdown Voltage: 30 V;
3.3 A
.09 ohm
35 pF
R-PDSO-G3
1.3 W
13 A
DMTH10H015SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 100 V;
12.5 mJ
59 A
26 pF
3.7 W
235 A
DMTH10H015SK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Operating Temperature: 175 Cel; Transistor Application: SWITCHING;
DMTH10H009LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 39 W; Maximum Drain-Source On Resistance: .0085 ohm; Package Shape: SQUARE;
144.5 mJ
14 A
.0085 ohm
16 pF
39 W
220 A
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