Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMNH10H028SPSQ-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 54 A; Operating Mode: ENHANCEMENT MODE;
HIGH RELIABILITY
35 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
40 A
.028 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F5
e3
1
5
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
54 A
AEC-Q101
YES
MATTE TIN
FLAT
DUAL
SWITCHING
SILICON
DMTH8012LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
10.2 mJ
80 V
50 A
.017 ohm
10 pF
R-PDSO-F8
8
100 W
200 A
MIL-STD-202
DMC3016LNS-13
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; No. of Terminals: 8;
24 mJ
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
9 A
.02 ohm
107 pF
S-PDSO-F8
2
150 Cel
SQUARE
N-CHANNEL AND P-CHANNEL
2 W
55 A
30
DMN2028UVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
20 V
6.2 A
.024 ohm
78 pF
R-PDSO-G6
6
1.6 W
GULL WING
DMC3025LNS-13
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Feedback Capacitance (Crss): 57 pF; JESD-609 Code: e3;
9.8 mJ
7.2 A
.035 ohm
57 pF
1.8 W
45 A
DMG10N60SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;
ESD PROTECTED
550 mJ
600 V
12 A
.75 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
178 W
15 A
THROUGH-HOLE
SINGLE
DMG8N65SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
389 mJ
650 V
8 A
1.3 ohm
125 W
NO
DMN60H3D5SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; JESD-30 Code: R-PSSO-G2; Maximum Pulsed Drain Current (IDM): 4.4 A;
30 mJ
2.8 A
3.5 ohm
R-PSSO-G2
41 W
4.4 A
DMJ70H601SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 15 A; No. of Elements: 1;
86 mJ
700 V
.6 ohm
TO-252
DMN90H8D5HCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
97 mJ
ISOLATED
900 V
2.5 A
7 ohm
3 A
DMP45H4D9HJ3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 22.4 A; Maximum Drain Current (ID): 4.6 A;
187 mJ
450 V
4.6 A
4.9 ohm
TO-251
R-PSIP-T3
IN-LINE
P-CHANNEL
22.4 A
DMN3009LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Case Connection: DRAIN; Moisture Sensitivity Level (MSL): 1;
60 A
.0055 ohm
S-PDSO-N8
NO LEAD
DMJ70H1D0SV3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: 1 ohm; JEDEC-95 Code: TO-251; Operating Mode: ENHANCEMENT MODE;
7.5 mJ
6 A
1 ohm
DMJ70H1D4SV3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Package Style (Meter): IN-LINE;
5 A
1.5 ohm
DMJ70H1D5SV3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; JESD-609 Code: e3; No. of Terminals: 3;
DMN95H2D2HCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
360 mJ
950 V
2.2 ohm
24 A
DMN95H8D5HCTI
DMN95H8D5HCTI by Diodes Inc. is a N-CHANNEL Power FET with 950V DS Breakdown Voltage and 3A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an RDS(on) of 7 ohm and EAS of 97mJ for efficient performance.
DMTH10H005SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE;
542 mJ
140 A
.005 ohm
400 A
DMP1011LFV-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
SOURCE
12 V
13 A
.0117 ohm
2.16 W
70 A
DMP1011LFV-7
DMP1011LFV-7 by Diodes Inc. is a P-channel FET with 12V DS breakdown voltage, 70A pulsed drain current, and 0.0117 ohm max on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.16W. Suitable for surface mount designs, it has a small outline package style and can withstand temperatures from -55 to 150°C.
DMJ70H600SH3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 113 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-251;
67.5 mJ
11 A
113 W
DMN1002UCA6-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.47 W; Maximum Feedback Capacitance (Crss): 297 pF; Package Style (Meter): CHIP CARRIER;
297 pF
R-XBCC-N6
e4
UNSPECIFIED
CHIP CARRIER
2.47 W
NICKEL PALLADIUM GOLD
BOTTOM
10255 ns
4787 ns
DMN3008SCP10-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
R-XBCC-N10
10
2.7 W
DMN60H4D5SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; JESD-30 Code: R-PSSO-G2; Maximum Pulsed Drain Current (IDM): 2.6 A;
33 mJ
41 ohm
4.2 pF
2.6 A
DMN80H2D0SCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; No. of Terminals: 3; No. of Elements: 1;
60 mJ
800 V
7 A
2 ohm
11 pF
28 A
DMT3009LFVW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Reference Standard: MIL-STD-202;
19 mJ
.011 ohm
52 pF
35.7 W
90 A
DMT3006LFV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Minimum DS Breakdown Voltage: 30 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
29 mJ
.007 ohm
72 pF
DMN3009SFGQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
55 mJ
16 A
248 pF
2.1 W
80 A
AEC-Q101; IATF 16949; MIL-STD-202
DMC2025UFDB-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Package Style (Meter): SMALL OUTLINE; Terminal Finish: NICKEL PALLADIUM GOLD;
8.5 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
77 pF
R-PDSO-N6
1.4 W
20 A
DMT10H072LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
1.8 mJ
4 A
.062 ohm
2.5 pF
S-PDSO-N6
22 A
DMT3006LFVQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: S-PDSO-F8;
AEC-Q101; MIL-STD-202
DMN3013LDG-13
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Style (Meter): SMALL OUTLINE; Maximum Feedback Capacitance (Crss): 16 pF;
28 mJ
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
9.5 A
.0177 ohm
16 pF
DMN3013LDG-7
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Maximum Drain-Source On Resistance: .0177 ohm; Peak Reflow Temperature (C): 260;
DMN3013LFG-13
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 30 V;
DMN3013LFG-7
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE;
DMN3022LDG-13
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.96 W; Case Connection: SOURCE; No. of Terminals: 8;
7.6 A
.022 ohm
10.6 pF
1.96 W
DMN3022LDG-7
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.96 W; Maximum Feedback Capacitance (Crss): 10.6 pF; Operating Mode: ENHANCEMENT MODE;
DMN3022LFG-7
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Reference Standard: MIL-STD-202;
DMPH4025SFVWQ-7
DMPH4025SFVWQ-7 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 60W power dissipation, -55 to 175 °C operating range, and METAL-OXIDE SEMICONDUCTOR technology.
82 mJ
40 V
.025 ohm
151 pF
60 W
DMT4008LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; Maximum Pulsed Drain Current (IDM): 70 A; No. of Elements: 1;
19.2 mJ
54.8 A
.0079 ohm
42 pF
DMT4008LFV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; No. of Terminals: 8; JESD-30 Code: S-PDSO-F8;
DMT43M8LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45.4 W; JESD-30 Code: R-PDSO-G5; Maximum Feedback Capacitance (Crss): 55 pF;
98 mJ
87 A
.004 ohm
55 pF
R-PDSO-G5
45.4 W
120 A
DMT43M8LFV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45.4 W; Terminal Position: DUAL; JESD-609 Code: e3;
DMN4025LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.14 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
5.6 A
120 pF
R-PDSO-G8
2.14 W
29 A
DMT2005UDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
AVALANCHE ENERGY RATED
24 V
517 pF
S-PDSO-F6
1.9 W
DMT2005UDV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Terminals: 6;
DMN4030LK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
13.7 A
.03 ohm
8.9 W
37.7 A
DMN5040LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
8 mJ
50 V
5.2 A
.04 ohm
28 pF
-50 Cel
25 A
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