Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
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DMS3016SSSA-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Additional Features: HIGH RELIABILITY; Operating Mode: ENHANCEMENT MODE;
HIGH RELIABILITY
SINGLE WITH BUILT-IN DIODE
30 V
9.8 A
.016 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e3
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
1.54 W
90 A
FET General Purpose Power
YES
MATTE TIN
GULL WING
DUAL
30
SWITCHING
SILICON
DMN3112SQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: HIGH RELIABILITY; No. of Terminals: 3;
5.8 A
.057 ohm
R-PDSO-G3
3
1.4 W
20 A
AEC-Q101
FET General Purpose Powers
DMG4N65CT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9.14 W; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
456 mJ
650 V
4 A
3 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
9.14 W
6 A
NO
THROUGH-HOLE
SINGLE
DMP2070UCB6-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Maximum Pulsed Drain Current (IDM): 12 A; Package Style (Meter): GRID ARRAY;
20 V
3.5 A
2.5 A
.15 ohm
38 pF
R-PBGA-B6
e1
6
-55 Cel
GRID ARRAY
P-CHANNEL
1.47 W
12 A
Other Transistors
TIN SILVER COPPER
BALL
BOTTOM
DMP2035UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .045 ohm; Package Shape: RECTANGULAR;
5.2 A
.045 ohm
R-PDSO-G6
2 W
24 A
DMG9N65CT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; No. of Elements: 1; Minimum DS Breakdown Voltage: 650 V;
9 A
.0013 ohm
30 A
DMN3025LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1;
DRAIN
7.5 A
.018 ohm
S-PDSO-N5
5
SQUARE
60 A
NO LEAD
DMG4406LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL;
10.3 A
9.3 A
.011 ohm
DMG9N65CTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 13 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 9 A;
ISOLATED
13 W
DMN2028UFDH-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 6.8 A;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
6.8 A
.036 ohm
R-PDSO-N8
2
1.5 W
40 A
DMG4N65CTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.35 W; Minimum DS Breakdown Voltage: 650 V; Package Style (Meter): FLANGE MOUNT;
8.35 W
DMC4028SSDQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Shape: RECTANGULAR; No. of Elements: 2;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
7.2 A
5.4 A
.028 ohm
N-CHANNEL AND P-CHANNEL
2.16 W
27.3 A
DMP1018UCB9-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; No. of Elements: 1; Terminal Finish: TIN SILVER COPPER;
12 V
7.6 A
5.5 A
.022 ohm
120 pF
S-PBGA-B9
9
1.8 W
HTMN5130SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Reference Standard: AEC-Q101;
89 mJ
55 V
2.6 A
.13 ohm
8 A
DMP2066LSD-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
.04 ohm
Not Qualified
ZXMN2AMCTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
3.7 A
2.9 A
.12 ohm
e4
2.45 W
13 A
NICKEL PALLADIUM GOLD
ZXMN3AMCTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Additional Features: HIGH RELIABILITY; Maximum Operating Temperature: 150 Cel;
DMN3053L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
42 pF
1.2 W
35 A
ZXMN4A06GQTA
ZXMN4A06GQTA by Diodes Inc. is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 22A max pulsed drain current, and 0.05 ohm max drain-source resistance. Suitable for enhancement mode operation in automotive (AEC-Q101) and military (MIL-STD-202) environments.
5 A
.05 ohm
60 pF
R-PDSO-G4
4
22 A
AEC-Q101; MIL-STD-202
DMP2006UFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Transistor Application: SWITCHING; No. of Elements: 1;
28 mJ
17.5 A
.0055 ohm
900 pF
41 W
80 A
370 ns
55 ns
DMP2006UFG-7
DMP2006UFG-7 by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 28mJ EAS, and 0.0055 ohm RDS(ON). Operating from -55 to 150 °C, it has a compact SQUARE package with NO LEAD terminals for surface mount assembly.
DMP2033UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Feedback Capacitance (Crss): 63 pF; Package Style (Meter): SMALL OUTLINE;
4.2 A
.065 ohm
63 pF
1.7 W
10 A
DMP3065LVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .042 ohm; Terminal Form: GULL WING;
.042 ohm
130 pF
1.6 W
MIL-STD-202
75 ns
32 ns
DMP3065LVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Reference Standard: MIL-STD-202; Maximum Operating Temperature: 150 Cel;
DMJ7N70SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.25 ohm; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;
700 V
3.9 A
1.25 ohm
TO-252
R-PSSO-G2
15.6 A
DMN2104L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Minimum DS Breakdown Voltage: 20 V; Peak Reflow Temperature (C): 260;
4.3 A
.053 ohm
15 A
DMN3052LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; No. of Elements: 1;
7.1 A
.03 ohm
2.5 W
28 A
DMS2220LFW-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e4; Additional Features: HIGH RELIABILITY;
.095 ohm
DMC3018LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .02 ohm;
9.1 A
.02 ohm
32 A
DMP3025LK3-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
16.1 A
10.6 A
.025 ohm
TO-252AA
10 W
41.9 A
DMN2027LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
17 A
11.6 A
.021 ohm
8.9 W
46.8 A
DMN3020LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Maximum Drain-Source On Resistance: .02 ohm; Qualification: Not Qualified;
16.7 A
11.3 A
51 A
DMN4009LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Transistor Element Material: SILICON; No. of Terminals: 2;
18 A
.0085 ohm
10.3 W
96.6 A
DMN4015LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Case Connection: DRAIN; No. of Elements: 1;
20.8 A
13.5 A
.015 ohm
72.8 A
DMT5015LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.97 W; Terminal Form: NO LEAD; Case Connection: DRAIN;
10.4 mJ
50 V
15.2 pF
S-PDSO-N6
NOT SPECIFIED
1.97 W
Nickel/Palladium/Gold (Ni/Pd/Au)
DMT5015LFDF-7
DMT5015LFDF-7 by Diodes Inc. is a N-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 10.4mJ EAS, and 0.015 ohm RDS(ON). With a small outline package style and -55 to 150 °C operating temperature range, it offers high performance in power management systems.
ZXMN15A27KTC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
55 mJ
150 V
2.55 A
1.7 A
.65 ohm
9.5 W
17.2 A
DMP3017SFK-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
104 mJ
7.8 A
.014 ohm
686 pF
R-PDSO-N6
17 W
170 ns
45 ns
DMP3017SFK-7
DMP3017SFK-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 104mJ EAS, and 0.014 ohm RDS(ON). With a small outline package style and -55 to 150 °C operating temperature range, it offers high performance in various electronic designs.
DMT8012LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Feedback Capacitance (Crss): 10 pF; JESD-609 Code: e3;
80 V
9.5 A
10 pF
S-PDSO-N8
2.2 W
DMN6013LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Feedback Capacitance (Crss): 132 pF; Maximum Pulsed Drain Current (IDM): 58.3 A;
56.8 mJ
60 V
.013 ohm
132 pF
2.1 W
58.3 A
DMS3014SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.55 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
10.4 A
1.55 W
63 A
DMS3016SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Maximum Drain Current (Abs) (ID): 9.8 A; JESD-30 Code: R-PDSO-G8;
DMN3052L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 30 V;
.032 ohm
19 A
DMC3035LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-30 Code: R-PDSO-G8; Maximum Drain Current (Abs) (ID): 6.9 A;
6.9 A
.035 ohm
DMN3007LSS-13
DMN3007LSS-13 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 16A max drain current, and 0.007 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include 64A pulsed drain current, small outline package style, and matte tin terminal finish.
16 A
.007 ohm
64 A
DMN3112S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
DMN2009LSS-13
DMN2009LSS-13 by Diodes Inc. is a power FET with N-channel polarity and a built-in diode. It is used for switching applications, has a min DS breakdown voltage of 20V, and can handle a max pulsed drain current of 42A.
LOW THRESHOLD
.008 ohm
42 A
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