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20 W Power Field Effect Transistors (FET) 19

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SP201 by Polyfet R F Devices

SP201

Polyfet R F Devices

SP201 by Polyfet R F Devices is a single N-channel power FET with 1.2A max drain current and 20W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.

SINGLE

1.2 A

1.2 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

20 W

FET General Purpose Power

NE5520379A-T1A-A by Renesas Electronics

NE5520379A-T1A-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 125 Cel;

SINGLE

1.5 A

1.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

125 Cel

N-CHANNEL

20 W

FET General Purpose Power

YES

2SK4021(Q) by Toshiba

2SK4021(Q)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (Abs) (ID): 4.5 A; No. of Elements: 1;

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

20 W

FET General Purpose Power

NO

2SK4017(Q) by Toshiba

2SK4017(Q)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 5 A;

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

20 W

FET General Purpose Power

NO

RSD150N06TL by ROHM

RSD150N06TL

ROHM

ROHM RSD150N06TL is a N-CHANNEL FET with 60V DS breakdown voltage, 15A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 20W.

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15 A

.051 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e2

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

20 W

30 A

Not Qualified

FET General Purpose Power

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

STFW1N105K3 by STMicroelectronics

STFW1N105K3

STMicroelectronics

STFW1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 20W max power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power management systems or motor control circuits.

SINGLE

1.4 A

1.4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

20 W

FET General Purpose Powers

NO

NOT SPECIFIED

STFILED524 by STMicroelectronics

STFILED524

STMicroelectronics

STFILED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage. It features 14A IDM, 110mJ EAS, and 20W Max Power Dissipation. Ideal for applications requiring high voltage tolerance and efficient power management in various electronic circuits.

110 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

525 V

4 A

4 A

2.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-281

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

20 W

14 A

NO

THROUGH-HOLE

SINGLE

SILICON

STD17NF03L-1 by STMicroelectronics

STD17NF03L-1

STMicroelectronics

STD17NF03L-1 by STMicroelectronics is a N-channel Power FET with 30V DS Breakdown Voltage and 68A IDM. Ideal for switching applications, it features a built-in diode, 0.06 ohm RDS(on), and 20W Pdiss. Suitable for enhancement mode operation in various electronic devices.

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

17 A

17 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

20 W

68 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF7NM50N by STMicroelectronics

STF7NM50N

STMicroelectronics

STF7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

100 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

5 A

5 A

.78 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

20 W

20 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STF6NM60N by STMicroelectronics

STF6NM60N

STMicroelectronics

STF6NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 4.6A max drain current. It operates in enhancement mode with a low on-resistance of 0.92Ω. This versatile FET is suitable for various power management tasks.

65 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

4.6 A

4.6 A

.92 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

20 W

18.4 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

RSY160P05TL by ROHM

RSY160P05TL

ROHM

ROHM RSY160P05TL is a P-CHANNEL FET with 45V DS Breakdown Voltage, 16A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.

DRAIN

SINGLE WITH BUILT-IN DIODE

45 V

16 A

16 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

20 W

32 A

Not Qualified

Other Transistors

YES

FLAT

DUAL

10

SWITCHING

SILICON

2SK3793-AZ by Renesas Electronics

2SK3793-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 10;

SINGLE

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

260

N-CHANNEL

20 W

FET General Purpose Power

NO

10

STP4NK50ZFP by STMicroelectronics

STP4NK50ZFP

STMicroelectronics

STP4NK50ZFP by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A max pulsed drain current. It operates in enhancement mode with a max power dissipation of 20W. This versatile transistor is suitable for high-temperature environments up to 150 °C.

120 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

3 A

3 A

2.7 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

20 W

12 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MTD6N15T4G by Onsemi

MTD6N15T4G

Onsemi

MTD6N15T4G by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage, 20A IDM, and 0.3 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 6A ID. The PLASTIC/EPOXY package features GULL WING terminals and can handle up to 20W power dissipation.

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

6 A

6 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

20 W

20 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STF2NK60Z by STMicroelectronics

STF2NK60Z

STMicroelectronics

STF2NK60Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 1.4A. It operates in enhancement mode with a power dissipation of up to 20W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.

90 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

1.4 A

1.4 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

20 W

5.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2SK3050TL by ROHM

2SK3050TL

ROHM

ROHM 2SK3050TL is a N-CHANNEL FET with 600V DS breakdown voltage and 6A IDM. Ideal for switching applications, it features a built-in diode, 5.5ohm RDS(on), and operates in enhancement mode at up to 150°C.

21 mJ

SINGLE WITH BUILT-IN DIODE

600 V

2 A

2 A

5.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e2

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

20 W

6 A

Not Qualified

FET General Purpose Power

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

STF4NK50ZD by STMicroelectronics

STF4NK50ZD

STMicroelectronics

STF4NK50ZD by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 20W. This versatile transistor is suitable for various electronic circuits.

120 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

3 A

3 A

2.7 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

20 W

12 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF9N65M2 by STMicroelectronics

STF9N65M2

STMicroelectronics

STF9N65M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 20A max pulsed drain current, and operates in enhancement mode. Ideal for high-performance power management in various electronic devices.

105 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

5 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

.9 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

20 W

20 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTTFS5C478NLTAG by Onsemi

NTTFS5C478NLTAG

Onsemi

NTTFS5C478NLTAG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 104A IDM, and 0.025 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

26 A

10 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

20 W

104 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON