Loading...

SP201

Polyfet R F Devices

SP201 by Polyfet R F Devices

SP201 by Polyfet R F Devices is a single N-channel power FET with 1.2A max drain current and 20W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.

Median Price

$139.000

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 18 parts In-Stock

1+ parts

$139.000

100+ parts

-

1k+ parts

-

10k+ parts

-

18

$139.000

-

-

-

Vyrian

USA . 6,061 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,061

-

-

-

-

A2Z Electronics, Inc.

USA . 550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

550

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,006 parts In-Stock

1+ parts

$2.397

100+ parts

$2.373

1k+ parts

$2.277

10k+ parts

-

2,006

$2.397

$2.373

$2.277

-

AZTECH Wire

Italy . 799 parts In-Stock

1+ parts

$15.218

100+ parts

-

1k+ parts

-

10k+ parts

-

799

$15.218

-

-

-

Allen Electronics Distributors

USA . 1 parts In-Stock

1+ parts

$120.870

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$120.870

-

-

-

Continental Prestige Electronics

USA . 4,255 parts In-Stock

1+ parts

$139.000

100+ parts

-

1k+ parts

-

10k+ parts

$136.220

4,255

$139.000

-

-

$136.220

Netroflash

USA . 100 parts In-Stock

1+ parts

$139.000

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$139.000

-

-

-

Argo Parts USA

USA . 3,676 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,676

-

-

-

-

Assy Fe

Spain . 171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

171

-

-

-

-

Overview

Power up your projects with the SP201 by Polyfet R F Devices! This high-quality N-CHANNEL Power Field Effect Transistor offers a maximum Drain Current of 1.2 A and a Power Dissipation of 20 W, making it perfect for a wide range of applications. From amplifiers to power supplies, this Enhancement Mode transistor provides reliable performance and efficiency. Trust in Polyfet R F Devices to deliver top-notch products that exceed expectations. Upgrade your designs with the SP201 and experience the benefits firsthand.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL Power FETs are known for their high efficiency and fast switching speeds, making them ideal for a wide range of applications.

Configuration

Single configuration FETs are simple to use and provide consistent performance.

Operating Mode

Enhancement mode FETs are easier to control and are commonly used in power applications.

Maximum Drain Current (Abs) (ID)

The high maximum drain current allows the FET to handle heavier loads.

Maximum Power Dissipation (Abs)

With a maximum power dissipation of 20W, this FET can handle high power levels without overheating.

Field Effect Transistor Technology

Metal-oxide semiconductors are known for their reliability and low on-state resistance, making them ideal for power applications.

Maximum Operating Temperature

The FET can operate efficiently even at high temperatures, making it suitable for harsh environments.

Maximum Drain Current (ID)

The high maximum drain current allows the FET to handle heavy loads with ease.

Technical Specifications

Power Field Effect Transistors (FET) SP201 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Polyfet R F Devices

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.2 A

Maximum Drain Current (ID):

1.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Trade Compliance

SP201 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4330-00-625-2970, 4330006252970, 5915-00-823-6121, 5915008236121, 7530-66-112-8953, 7530661128953, 7530-66-118-7691, 7530661187691, 7021-01-466-0601, 7021014660601

NIIN

006252970, 008236121, 661128953, 661187691, 014660601

Manufacturer Highlights

Polyfet R F Devices

Polyfet RF Devices is a manufacturer of broad band RF power transistors and power modules. We are a private corporation that has been in business since 1988. Our devices consist of Gallium Nitride, LDMOS, and VDMOS technologies processed using state of the art equipment. They have maximum operating conditions of up to 50Vdc, 3GHz, and 600W. Our products are used in applications such as military communications, TV Broadcast, and NMR. We employ a technical staff to assist our customers with support from device selection to amplifier design. Our commitment to long-term production support has enhanced the attraction by military contractors to use our products where obsolescence would be an issue.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1