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SP202

Polyfet R F Devices

SP202 by Polyfet R F Devices

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 30 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) SP202 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Polyfet R F Devices

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.8 A

Maximum Drain Current (ID):

1.8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Trade Compliance

SP202 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4820-01-301-9129, 4820013019129, 5210-00-727-8849, 5210007278849, 5865-00-495-0931, 5865004950931, 5915-00-898-9625, 5915008989625, 6670-01-588-1681, 6670015881681

NIIN

013019129, 007278849, 004950931, 008989625, 015881681

Manufacturer Highlights

Polyfet R F Devices

Polyfet RF Devices is a manufacturer of broad band RF power transistors and power modules. We are a private corporation that has been in business since 1988. Our devices consist of Gallium Nitride, LDMOS, and VDMOS technologies processed using state of the art equipment. They have maximum operating conditions of up to 50Vdc, 3GHz, and 600W. Our products are used in applications such as military communications, TV Broadcast, and NMR. We employ a technical staff to assist our customers with support from device selection to amplifier design. Our commitment to long-term production support has enhanced the attraction by military contractors to use our products where obsolescence would be an issue.

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