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140 W Power Field Effect Transistors (FET) 24

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STP40NS15 by STMicroelectronics

STP40NS15

STMicroelectronics

STP40NS15 by STMicroelectronics is a N-CHANNEL FET with 150V DS Breakdown Voltage, 40A Max ID, and 0.052 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 160A IDM and 140W Pd.

500 mJ

SINGLE WITH BUILT-IN DIODE

150 V

40 A

40 A

.052 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

160 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP16NS25 by STMicroelectronics

STP16NS25

STMicroelectronics

STP16NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS breakdown voltage, ideal for SWITCHING applications. It features 64A max pulsed drain current and 0.28 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 140W and can handle up to 150 °C temperature.

600 mJ

SINGLE WITH BUILT-IN DIODE

250 V

16 A

16 A

.28 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

64 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP13NK50Z by STMicroelectronics

STP13NK50Z

STMicroelectronics

STP13NK50Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 11A max drain current, and 140W power dissipation. Ideal for high-efficiency circuits in various electronic devices.

240 mJ

SINGLE WITH BUILT-IN DIODE

500 V

11 A

11 A

.48 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

140 W

44 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IRLR7843CPBF by International Rectifier

IRLR7843CPBF

International Rectifier

IRLR7843CPBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 620A IDM, 1440mJ EAS, and 0.0033 ohm RDS(on). With a max power dissipation of 140W and operating temperature of 175°C, it offers high performance in a small outline package.

1440 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

161 A

30 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

140 W

620 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

30

SWITCHING

SILICON

IRLR7843CTRPBF by International Rectifier

IRLR7843CTRPBF

International Rectifier

IRLR7843CTRPBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 620A and EAS of 1440mJ, making it suitable for high-power operations. With a 0.0033 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C.

1440 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

161 A

30 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

140 W

620 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN OVER NICKEL

GULL WING

SINGLE

SWITCHING

SILICON

STB21NM60ND by STMicroelectronics

STB21NM60ND

STMicroelectronics

STB21NM60ND by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STI21NM60ND by STMicroelectronics

STI21NM60ND

STMicroelectronics

STI21NM60ND by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP21NM60ND by STMicroelectronics

STP21NM60ND

STMicroelectronics

STP21NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 68A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW21NM60ND by STMicroelectronics

STW21NM60ND

STMicroelectronics

STW21NM60ND from STMicroelectronics is a powerful N-channel MOSFET designed for switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SPB77N06S2-12 by Infineon Technologies

SPB77N06S2-12

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain-Source On Resistance: .012 ohm; Minimum DS Breakdown Voltage: 55 V;

AVALANCHE RATED

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

77 A

80 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

140 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SILICON

SPP77N06S2-12 by Infineon Technologies

SPP77N06S2-12

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 80 A;

AVALANCHE RATED

280 mJ

SINGLE WITH BUILT-IN DIODE

55 V

77 A

80 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

STB16NS25T4 by STMicroelectronics

STB16NS25T4

STMicroelectronics

STB16NS25T4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 16 A, breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for compact power management solutions.

200 mJ

SINGLE WITH BUILT-IN DIODE

250 V

16 A

16 A

.28 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

140 W

64 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STI30N65M5 by STMicroelectronics

STI30N65M5

STMicroelectronics

STI30N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 88A IDM, and 0.139 ohm RDS(on). Ideal for SWITCHING applications due to its 140W Pdiss, EAS of 500mJ, and operating temp up to 150°C. Package style is IN-LINE with THROUGH-HOLE terminals.

AVALANCHE ENERGY RATED

500 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22 A

22 A

.139 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

140 W

88 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW30N65M5 by STMicroelectronics

STW30N65M5

STMicroelectronics

STW30N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 88A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

AVALANCHE ENERGY RATED

500 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22 A

22 A

.139 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

88 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB21NM50N-1 by STMicroelectronics

STB21NM50N-1

STMicroelectronics

STB21NM50N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 72A max pulsed drain current, and operates at up to 150 °C. This versatile FET ensures efficient power management in various electronic devices.

480 mJ

SINGLE WITH BUILT-IN DIODE

500 V

18 A

18 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

140 W

72 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB21NM50N by STMicroelectronics

STB21NM50N

STMicroelectronics

STB21NM50N by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 72A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.

480 mJ

SINGLE WITH BUILT-IN DIODE

500 V

18 A

18 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

140 W

72 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STB21NM60N-1 by STMicroelectronics

STB21NM60N-1

STMicroelectronics

STB21NM60N-1 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB21NM60N by STMicroelectronics

STB21NM60N

STMicroelectronics

STB21NM60N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STP21NM50N by STMicroelectronics

STP21NM50N

STMicroelectronics

STP21NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 18A max drain current. It operates in enhancement mode with a low on-resistance of 0.19Ω. Designed for high power dissipation (140W), it's perfect for efficient power management.

480 mJ

SINGLE WITH BUILT-IN DIODE

500 V

18 A

18 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

72 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP21NM60N by STMicroelectronics

STP21NM60N

STMicroelectronics

STP21NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW21NM50N by STMicroelectronics

STW21NM50N

STMicroelectronics

STW21NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 72A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

480 mJ

SINGLE WITH BUILT-IN DIODE

500 V

18 A

18 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

72 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW21NM60N by STMicroelectronics

STW21NM60N

STMicroelectronics

STW21NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 68A pulsed drain current. It offers a low on-resistance of 0.22Ω and operates up to 150 °C. This versatile FET is suitable for high-power circuits.

610 mJ

SINGLE WITH BUILT-IN DIODE

600 V

17 A

17 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AD

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

68 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP65N150M9 by STMicroelectronics

STP65N150M9

STMicroelectronics

STP65N150M9 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 50A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

20 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

140 W

50 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IRF1010EZSTRLP by Infineon Technologies

IRF1010EZSTRLP

Infineon Technologies

IRF1010EZSTRLP by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, suitable for SWITCHING applications. It has a max IDM of 340A and EAS of 99mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and GULL WING terminals, it offers 0.0085 ohm Drain-Source On Resistance.

AVALANCHE RATED, ULTRA-LOW RESISTANCE

99 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

140 W

340 A

YES

GULL WING

SINGLE

SWITCHING

SILICON